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Semiconductor Memory Circuits
Published in Vojin G. Oklobdzija, Digital Design and Fabrication, 2017
Since the dawn of the electronic era, memory or storage devices have been an integral part of electronic systems. As the electronic industry matured and moved away from vacuum tubes to semiconductor devices, research in the area of semiconductor memories also intensified. Semiconductor memory uses semiconductor-based integrated circuits to store information. The semiconductor memory industry evolved and prospered along with the digital computer revolution. Today, semiconductor memory arrays are widely used in many VLSI subsystems, including microprocessors and other digital systems. In these systems, they are used to store programs and data and in almost all cases have replaced core memory as the active main memory. More than half of the real estate in many state-of-the art microprocessors is devoted to cache memories, which are essentially semiconductor memory arrays. System designer's (both hardware and software) unmitigated quest for more memory capacity has accelerated the growth of the semiconductor memory industry.
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Published in Phillip A. Laplante, Dictionary of Computer Science, Engineering, and Technology, 2017
read-only memory (ROM) semiconductor memory unit that performs only the read operation; it does not have the write capability. The contents of each memory location are fixed during the hardware production of the device and cannot be altered. A ROM has a set of k input address lines (that determine the number of addressable positions 2k) and a set of n output data lines (that determine the width in bits of the information stored in each position). An integrated circuit ROM may also have one or more enable lines for interconnecting several circuits and make a ROM with larger capacity. Plain ROM does not allow erasure, but programmable ROM (PROM) does. Static ROM does not require a clock for proper operation, whereas dynamic ROM does. See also random access memory, programmable read-only memory.
Performance Review of Static Memory Cells Based on CMOS, FinFET, CNTFET and GNRFET Design
Published in Balwinder Raj, Ashish Raman, Nanoscale Semiconductors, 2023
MOS memory cells are currently used to create random-access memory (RAM) on integrated circuit (IC) devices. Dynamic random-access memory (DRAM) and static random-access memory (SRAM) are the two most common forms of volatile random-access semiconductor memory (SRAM). Commercial MOS memory, which makes use of MOS transistors, was invented in the late 1960s and has since become the foundation for all commercial semiconductor memory [34–36].
The impact of scaling on single event upset in 6T and 12T SRAMs from 130 to 22 nm CMOS technology
Published in Radiation Effects and Defects in Solids, 2018
N. S. Yusop, A. N. Nordin, M. Azim Khairi, N. F. Hasbullah
Static random access memory (SRAMs) cells are high-speed semiconductor memory that use flip-flop to store each bit. The circuit is said to be static as the stored data can be retained indefinitely if power is being supplied. Basic SRAM (Figure 1) consists of two PMOS and four NMOS transistors that build up a single memory cell, where each bit is stored. Millions of cells make an array of memory (1).