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Vehicle Controllers and Communication
Published in Iqbal Husain, Electric and Hybrid Vehicles, 2021
There are five basic types of memory: RAM, ROM, EPROM, electrically erasable programmable ROM (EEPROM) and flash memory. A RAM has the capability to both read and write so that the stored information can be retrieved (read) and new information can be stored (write). This type of memory is typically of static type, which means that the memory contents are lost once the microcontroller is powered down. The ROM allows data to be read from, but do not allow writing into the memory. ROM is a non-volatile memory that retains its contents even after power is removed. ROM is used for storing the user code that does not change during execution of the software instructions. The EPROM devices allow the user to apply ultraviolet ray to erase the contents of the memory and reprogram it. EPROMs are generally used during the development stage when the user’s code often changes. The EEPROM is a type of ROM whose contents can be erased electrically and reprogrammed. Flash memory is the latest type of non-volatile memory similar to an EEPROM. Once programmed, the contents of the flash memory remain intact until an erase cycle is initiated through software, and the device has not been powered down. The contents of flash memory can be erased electrically.
Simulation of Multilayer Atom Nanostructures for Spinmechatronics
Published in Satya Bir Singh, Prabhat Ranjan, Alexander V. Vakhrushev, A. K. Haghi, Mechatronic Systems Design and Solid Materials, 2021
A. V. Vakhrushev, A. Yu. Fedotov, V. I. Boian, A. S. Sidorenko
Over the past decade, a new direction of research has been formed [11, 12], in which materials under the influence of external electric and magnetic fields are able to change the electrical resistance by several orders of magnitude. This phenomenon has received the name of colossal magnetic resistance and has significant prospects for creating new technologies for recording and storing information with increased density and low power consumption compared to conventional modern data carriers. The study of a crystalline sample of manganite of perovskite structure by the method of built-in combination of a scanning tunneling microscope and an electron microscope revealed a distortion of the crystal lattice of a substance caused by the combined motion of electrons and phonons. Materials with colossal magnetic resistance can be used to create computer non-volatile memory (MRAM), as well as in other spintronics and electronics devices.
Memory-Related Macros
Published in Murat Uzam, PIC16F1847 Microcontroller-Based Programmable Logic Controller, 2020
There are three basic memory types used in computers, PLCs, microcontrollers, etc., namely flash memory, SRAM, and EEPROM. Flash memory is an electronic (solid-state) non-volatile storage medium that can be electrically erased and reprogrammed. In PLCs, flash memory is mainly used to store programs. They can also be used to store constants. SRAM (Static Random Access Memory) uses flip-flop circuitry to store each bit, but it is still volatile memory as it will lose its contents when power is lost. PLCs use this memory for running the central CPU. SRAM is used to store variables. EEPROM (Electronically Erasable Programmable Read Only Memory) is a type of non-volatile memory used to store relatively small amounts of data but allowing individual bytes to be erased and reprogrammed.
Neural network detector with sparse codes for spin transfer torque magnetic random access memory
Published in Cogent Engineering, 2023
Spin transfer torque magnetic random access memory (STT-MRAM) is one of the most promising technologies for next-generation non-volatile memory (NVM) systems. Flash and dynamic RAM (DRAM) are now leading in electronic memory. However, the problem of the write/erase (W/E) cycles is hugely challenging for Flash systems. The reliability of the device is significantly degraded due to the W/E being over the limit. Moreover, DRAM cannot provide a non-volatile feature and has high power consumption due to the significant effect of inevitable leakage current. The STT-MRAM has arrived as a leading candidate for stand-alone and embedded NVM applications among various emerging NVM technologies (H. Cai et al., 2021). Significantly, due to attractive advances such as durable and non-volatile devices or nanosecond read and write processes, the STT-MRAM is very useful in many applications, such as consumer electronics devices, cache in mobile devices, and IoT/AI devices.
Improving storage performance of high-performance computing systems by using the non-volatile buffer cache
Published in International Journal of Computers and Applications, 2021
Hyunkyoung Choi, Yong-Hyeon Shin, Hyokyung Bahn
We now describe an efficient buffer cache management scheme that adopts non-volatile memory in conjunction with the DRAM buffer cache. Figure 2 shows the basic architecture of the proposed buffer cache that consists of a volatile-buffer cache and a non-volatile buffer cache. Our non-volatile buffer cache is placed in standard DIMM slots to access it through a byte-addressable interface. There exist several types of non-volatile memory media, such as PCRAM, FeRAM, and STT-MRAM. Recently, PCRAM and STT-MRAM have been drawing considerable interest from the research community due to their rapid improvement in micro-fabrication processes [12]. However, PCRAM has critical weaknesses to absorb write traffic in our buffer cache as it has limited write endurance and slow write performance compared to DRAM. For this reason, PCRAM is usually adopted to absorb read-intensive workloads in memory systems [5]. We use STT-MRAM as our non-volatile buffer cache because it does not have such limitations in write operations.
Building memory devices from biocomposite electronic materials
Published in Science and Technology of Advanced Materials, 2020
Xuechao Xing, Meng Chen, Yue Gong, Ziyu Lv, Su-Ting Han, Ye Zhou
The common feature of non-volatile memory is that the stored data will be retained even when the system power is off. Flash memory has been got a lot of interest due to higher chip density, multi-bit per cell storage properties and compatibility with the current complementary metal-oxide-semiconductor (CMOS) technology. On the other hand, the manufacturing cost of flash memory is much lower than that of EEPROM because byte-erasable EEPROM requires more area than block-erasable flash memory. Therefore, flash memory becomes most important and most widely adopted technology for non-volatile solid-state storage. According to the McClean Report, the flash memory occupied more than 40% market of the MOS memory IC market. Flash-memory-based on transistor structure can be further classified into two types-floating gate flash memory and charge-trapping flash memory [74].