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Analytical Modeling of High Electron Mobility Transistors
Published in D. Nirmal, J. Ajayan, Handbook for III-V High Electron Mobility Transistor Technologies, 2019
Drain-induced barrier lowering (DIBL) is the most prevalent short-channel effect. The concept of DIBL effect is described by the channel potential where the sub-threshold leakage current often occurs at the minimum channel potential. The device threshold voltage plays a major role in the control of DIBL effect. The threshold voltage is the minimum potential required to turn on the device. Here gives a measure of drain induced barrier lowering. Hence the position of minimum channel potential is evaluated by setting, () dϕl(x)dx=0
Physical and Technological Limitations of NanoCMOS Devices to the End of the Roadmap and Beyond
Published in Simon Deleonibus, Electronic Device Architectures for the Nano-CMOS Era, 2019
Simon Deleonibus, Olivier Faynot, Barbara de Salvo, Thomas Ernst, Cyrille Le Royer, Thierry Poiroux, Maud Vinet
Classically, DIBL is due to the capacitive coupling between drain and source resulting in a barrier lowering on the source side. An eased charge injection from the source allows an increased control of the channel charge by the source and drain electrodes and reduces the threshold voltage. This effect (thus ∆ VT) increases with increasing Vds and decreasing L. A simple model shows that: ΔVT=−γVdsL2(γ is in the range of 0.01 μm2)
Wide Temperature Range Operation of Si CMOS Platforms
Published in John D. Cressler, H. Alan Mantooth, Extreme Environment Electronics, 2017
DIBL refers to the reduction in threshold voltage of short-channel MOSFETs in the presence of a large drain electric field. The reduction in threshold voltage is caused by the intrinsically two-dimensional electric field of short-channel MOSFETs. In the presence of a large drain electric field, the surface barrier at the source–body junction is no longer exclusively controlled by the gate electric field. The drain field lowers the barrier height, which reduces the threshold voltage and increases the off-state leakage. DIBL is not thermally activated and one would therefore expect the barrier lowering to be independent of temperature. Measurements on 90 nm CMOS transistors down to 40 K (shown in Figure 16.4) suggest that DIBL is indeed independent of temperature which is consistent with earlier observations [3].
Optimization of Dual-K Gate Dielectric and Dual Gate Heterojunction SOI FinFET at 14 nm Gate Length
Published in IETE Journal of Research, 2022
Samjot Kaur Aujla, Navneet Kaur
Cogenda Visual TCAD simulations of the designed structure have been done by taking into consideration the scattering effects which arise in nanoscale technology through Lombardi Mobility Model [29]. Density-Gradient-Quantum-Correction Model, a preferred choice for the accountability of quantum confinement effects has been included [30]. Set of performance parameters have been evaluated for the designed structure namely, drain current at maximal value of gate potential (Id,on), drain current at minimum gate potential (Id,off), Id,on–Id,off ratio, Subthreshold Swing (SS) and DIBL. These parameters have been computed with gate voltage variation of 0 to 1 V and drain voltage 50 mV as boundary condition. SS indicates the gate potential required to alter the drain current by one decade. Equation (1) states the formula for the evaluation of the SS. SS evinces the capability of the transistor to overcome the subthreshold regime. DIBL is calculated as the difference of gate voltage corresponding to both 50 mV and 1 V drain voltage at drain current (IDIBL) of 4.071 × 10−7A which is evaluated with the formulae stated in Equation (2). WEF is the channel effective width which considers the fin height and fin width as in Equation (3). DIBL is a critical performance parameter for nanometre technology as its value indicates the adverse effect of drain voltage on the barrier potential lowering.
Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications
Published in International Journal of Electronics, 2018
R. Saravana Kumar, A. Mohanbabu, N. Mohankumar, D. Godwin Raj
Figure 7(b) shows the variation of DIBL on Lg and TB. An essential parameter that describing electrostatic integrity of HEMTs is DIBL that is defined as the change in the VT to the Vds change (DIBL = ∆VT/∆Vds) (Park & Rajan, 2011). As TB becomes thicker, channel moves away from the gate, hence reducing the electrostatic gate control. Reduction in gate control leads to the degradation of DIBL. It is seen that there is a linear increase in DIBL from 68 mV/V for TB = 2 nm to 82 mV/V for TB = 5 nm at Lg = 30 nm. A decrease in DIBL is observed with an increase in Lg. Decrease in Lg increases the lateral electric field, which penetrates from source to drain, thereby increasing the DIBL (Pati et al., 2013). The SCEs are highly noticeable when the Lg is below 30 nm. However, we achieved a SS ~73 (TB = 2nm) and 70 mV/decade (TB = 1 nm), DIBL ~68 (TB = 2 nm) and 65.2 mV/V (TB = 1 nm) for Lg = 30 nm, which is lower as compared to existing devices (Kim & Del Alamo, 2008, 2006). For Lg < 30 nm, the device exhibits a degradation in SS and DIBL as shown in Figure 7(a,b).
Performance Analysis of Multi-Channel-Multi-Gate-Based Junctionless Field Effect Transistor
Published in IETE Journal of Research, 2023
Shekhar Verma, Vishal Narula, Suman Lata Tripathi
At Vgs = 0 V and Vgs = 1 V, the Ioff current, and Ion current are calculated, respectively. For determining the threshold voltage, a constant current approach is used. The SS is another characteristic of FET voltage–current characteristics. The quicker transition between the OFF state and the ON state is demonstrated by the sharp value of SS. SS is calculated as d(Vgs)/d(log(ID)). The SS of the proposed device is 61.51 mV/decade, which is closer to the optimum SS of 60 mV/decade. DIBL refers to a decrease in the transistor's threshold voltage with increasing drain voltages. Additionally, the MCMG device exhibits a lower value of 22 mV/V.