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Identifying the Family of FETs
Published in Edwin S. Oxner, Fet Technology and Application, 2020
Within the family of FETs, shown in Figure 1.1, we have two major classifications: the junction FET, more commonly called the JFET, and the metal-oxide-semiconductor field-effect transistor, more commonly called a MOSFET. The JFET is classified as a depletion - mode FET, whereas the MOSFET can be designed to operate as either a depletion-mode or an enhancement-mode FET.
Basic electronics
Published in Raymond F. Gardner, Introduction to Plant Automation and Controls, 2020
The two types of FETs are the Junction Field-Effect Transistor (JFET) and Metallic-Oxide Semi-Conductor Field-Effect Transistor (MOSFET). The big difference is that the JFET operates in the depletion mode by controlling the flow of holes, and the MOSFET operates in the enhancement mode by controlling the flow of electrons. The JFETs’ P-N junction provides high input impedance, while MOSFETs use an isolated gate, which results in lower gate-leakage current and better control. The JFET gate must never be forward biased, while reversing polarity on the MOSFET has no deleterious effects.
Electronics and Emerging Paradigms
Published in Sergey Edward Lyshevski, Molecular Electronics, Circuits, and Processing Platforms, 2018
To design and fabricate planar CMOS ICs, which consist of FETs and BJTs as the major microelectronic devices, processes and design rules have been defined. It should be emphasized that there are various FETs—for example, metal-oxide-semiconductor field-effect transistor (MOSFET), junction field-effect transistor (JFET), metal-semiconductor field-effect transistor (MESFET), heterojunction field-effect transistor (HFET), heterojunction insulated-gate field-effect transistor (HIGFET), and modulation-doped field-effect transistor (MODFET).
Analysis of heat conduction in a nanoscale metal oxide semiconductor field effect transistor using lattice Boltzmann method
Published in Energy Sources, Part A: Recovery, Utilization, and Environmental Effects, 2023
Oussama Zobiri, Abdelmalek Atia, Müslüm Arıcı
The necessity of faster data processing, such as data transmission and data storage has been realized in recent years. During the data transmission by electrons to electronics, circuits may lead to unwanted hotspots (Chen 2005). The most commonly used materials in electronic industries are semiconductor materials. Among them, silicon (Si) is the dominating semiconductor material utilized for microelectronics devices (Nasri et al. 2015b). The Field-Effect Transistor (FET) is the essential component of semiconductor. The most popular type of isolated gate FET used in a variety of microelectronic is the Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). Hundreds of millions of semiconductors are assembled on a few square centimeters chip area (Pop, Sinha, and Goodson 2006). The channel region in the MOSFET was projected to be 13 nm in 2018, however, the miniaturization of MOSFET has already reached the nano-scale, and it is expected to be less than 6 nm in 2026 (Fiori et al. 2014).
A novel SOI MESFET to spread the potential contours towards the drain
Published in International Journal of Electronics, 2020
Mohaddeseh Mohtaram, Ali Asghar Orouji
Unlike Bipolar transistors (BJTs), Field Effect Transistors (FETs) are unipolar devices. It means, there is only one type of carrier, electron or hole, participate in the current of the channel, which makes it possible to exhibit high frequency and low noise behaviour. Among field effect transistors, Metal Semiconductor FETs (MESFET) have large applications in amplifiers, mixers, and oscillators. These devices are a voltage controlled component. In fact, a variable electric field controls the current of the source to the drain with changing the voltage applied to the gate. So far, various efforts have been made to improve the frequency and DC characteristics of MESFET transistors (Braga & Hiu Yung Wong, 2017; Dutta, 2016; Jia et al., 2015; Jia, Hu, & Zhu, 2018; Jia, Yang, & Zhang, 2013; Jia, Zhang, Xing, Luo, & Duan, 2015; Jia, Zhang, Xing, & Ma, 2015; Lakhdar & Lakehal, 2017; Mohtaram & Orouji, 2018)