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Performance Analysis of Emerging Low-Power Junctionless Tunnel FETs
Published in Shubham Tayal, Abhishek Kumar Upadhyay, Deepak Kumar, Shiromani Balmukund Rahi, Emerging Low-Power Semiconductor Devices, 2023
G. Lakshmi Priya, M. Venkatesh, S. Preethi, T. Venish Kumar, N. B. Balamurugan
The MOSFET is a semiconductor device widely used for switching and amplification of signals in electronic devices. The core of all integrated circuits is MOSFET because of its design and ease of fabrication. The MOSFET is basically categorized into two types, namely, N-channel MOSFET and P- channel MOSFET. Figure 6.1 shows an N-channel and P-channel MOSFET and two different types of MOSFETs called as enhancement (E)- and depletion (D)-type MOSFET.
MOSFET Design and Its Optimization for Low-Power Applications
Published in Suman Lata Tripathi, Parvej Ahmad Alvi, Umashankar Subramaniam, Electrical and Electronic Devices, Circuits and Materials, 2021
P. Vimala, M. Karthigai Pandian, T. S. Arun Samuel
Enhancement devices are normally preferred to depletion mode devices in practical applications. A device is normally in an “ON” condition and a gate source voltage (Vgs) is required to turn the device “OFF”. An enhancement mode n-channel MOSFET structure is shown in Figure 1.3. An electrical field is produced within a channel by applying a positive voltage that decreases the resistance of the channel and allows the electrons to get attracted towards the oxide layer, resulting in channel conduction. As the positive voltage applied to the gate is gradually increased, the drain current is also increased. This concept is acceptable for p-channel enhancement forms too. MOSFETs can generally be used as electronic switches or amplifiers due to their very low power consumption. The four types of ON and OFF states of a MOSFET switch are summarized in Table. 1.1.
Metal-Oxide-Semiconductor Field-Effect Transistor
Published in Jerry C. Whitaker, Microelectronics, 2018
The metal-oxide-semiconductor field-effect transistor (MOSFET) is a transistor that uses a control electrode, the gate, to capacitively modulate the conductance of a surface channel joining two end contacts, the source and the drain. The gate is separated from the semiconductor body underlying the gate by a thin gate insulator, usually silicon dioxide. The surface channel is formed at the interface between the semiconductor body and the gate insulator, see Fig. 4.1.
Evaluation of electromagnetic intrusion in brushless DC motor drive for electric vehicle applications with manifestation of mitigating the electromagnetic interference
Published in International Journal of Ambient Energy, 2020
M. Karthik, S. Usha, K. Venkateswaran, Hitesh Panchal, M. Suresh, V. Priya, K. K. Hinduja
Power Converters are the main source of EMI in EV, because of its high switching frequency of switches and power diodes present in the circuit. In converters, EMI spreads through conduction, radiation, and coupling devices such as an inductor, capacitors. Frequency below 10 MHz spreads by conduction, whereas higher frequencies above 10 MHz spread through radiation by air as a travel medium. Inference characteristics of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Power diodes discussed. MOSFET is one of the typically utilised switching devices because of its ideal characteristics such as high efficiency, low power consumption, etc. MOSFET is considered to be the main source of EMI in power converters.
Application of Novel Terminal Technologies for Superjunction Power MOSFETs
Published in IETE Technical Review, 2018
Zhen Cao, Baoxing Duan, Tongtong Shi, Song Yuan, Yintang Yang
Power MOSFETs are the key components in switching mode power supply circuits and inverter systems. In these applications, high breakdown voltage (BV) and low specific on-resistance (Ron,sp) are desired to improve the performance of the power device in the system. Superjunction (SJ) concept, widely applied to power semiconductor devices, is attractive due to its potential for reducing Ron,sp at a given BV, breaking the silicon limit [1–4].
The influence of radiation on the electrical characteristics of MOSFET and its revival by different annealing techniques
Published in Radiation Effects and Defects in Solids, 2022
N. Pushpa, A. P. Gnana Prakash
Metal oxide semiconductor field-effect transistors (MOSFETs) are one of the building blocks in the integrated circuit (IC) industry and used in diverse radiation environments: space, high energy labs, radiotherapy clinics, for example (1). Low-energy particles from space and high-energy particles from the Large Hadron Collider (LHC) that interact in MOS devices can cause functional damage (2, 3). High-energy ions create ionization and displacement damage, whereas 60Co gamma radiation produces point defects and collision cascades in addition to ionization in the MOSFETs. The damage created in MOSFET by ionization and displacement results from the production of oxide trapped charges in the gate oxide (SiO2) and interface trapped charges at the silicon–silicon dioxide (Si-SiO2) interface. These oxide and interface trapped charges may cause malfunctioning of electrical properties, such as threshold voltage (VTH) and mobility of MOSFETs. For the use of MOS devices in space, the devices need to resist up to a few hundreds of gray (Gy) of gamma radiation dose, and for high-energy physics experiments like in LHCs, the MOS devices need to resist up to 1 MeV equivalent 1016 cm−2 fluences of neutron over years of life which is equal to few thousands of Gy of gamma equivalent total dose. The required time to reach such high doses is explicitly high with the present 60Co gamma, electron and proton facilities. The required time to reach the same 60Co gamma equivalent dose using high-energy ions is quite minimal to impact the MOSFETs. In recent times, some experiments have been conducted to understand the effect of high-energy ions on the bipolar junction transistors (BJTs) (3, 4), SiGe heterojunction bipolar transistors (HBTs) (5, 6) and N-Channel Depletion MOSFETs (7–9). The studies related to the impact of radiation on MOSFETs and their revival by different annealing techniques are very few (4, 7). Thus, the present work investigates the impact of different Linear Energy Transfer (LET) high-energy ions on threshold voltage (VTH) and mobility of MOSFETs and recovery of its electrical characteristics, using different annealing techniques, to correlate the results with the 60Co gamma impacts on MOSFETs.