China
Africa
Explore chapters and articles related to this topic
Graphene-Based Electrochemicals and Biosensors for Multifaceted Applications in Healthcare
Published in Suvardhan Kanchi, Rajasekhar Chokkareddy, Mashallah Rezakazemi, Smart Nanodevices for Point-of-Care Applications, 2022
G. Manasa, Nagaraj Shetti, Ronald J. Mascarenhas, Kakarla Raghava Reddy
Seo and group [89] have fabricated a FET-based biosensor to detect SARS-CoV-2 by exploiting spike protein as a detection probe. FET is a device with three terminals, namely gate, source, and drain. In this electrode system, the electric field variations in the semiconductor gate region control the magnitude of the source-drain current [27]. The FET was layered with 1-pyrene butyric acid N-hydroxysuccinimide ester (PBASE) functionalized graphene sheets on which SARS-CoV-2 anti-spike protein antibodies were immobilized. PBASE acted as a probe linker between graphene-coated FET and antibodies. The performance of the FET was tested using the antigen protein, cultured virus, and nasopharyngeal swab samples from COVID-19 patients. The biosensor detected spike protein antigen in both PBS and universal transport medium (UTM-employed to suspend nasopharyngeal swabs in clinical diagnosis). The tests demonstrated the sensitive detection of the SAR-CoV-2 virus in PBS and UTM with a LOD of 1.0 fg/mL and 100.0 fg/mL, respectively. In contrast, the cultured virus and nasopharyngeal swab samples produced a LOD of 1.6 101 pfu/mL and 2.42 × 102 copies/mL, respectively. While on the other hand, a company named Grapheal introduced this graphene-based rapid COVID-19 screening test for direct detection of viral particles from saliva samples.
Black Phosphorus Transistors
Published in Yongqing Cai, Gang Zhang, Yong-Wei Zhang, Phosphorene, 2019
The field-effect transistor (FET), as a typical voltage-controlled current source, is a transistor that uses an electric field to control the electrical conductivity of a channel consisting of semiconductor material. Generally, a FET contains three terminals: the source (S), through which the carriers enter the channel; the drain (D), through which the carriers leave the channel; and the gate (G), which modulates the channel conductivity. When a FET works in a common-source mode in which S is connected to the ground, voltages Vds and Vgs are applied respectively to D and G. Therefore, there are two kinds of characteristic curves for FETs according to the measuring conditions. One is transfer characteristic (Vgs–Ids), in which the source–drain current Ids is obtained by sweeping the gate voltage (Vgs) with a fixed drain voltage (Vds). The other is output characteristic (Vds–Ids), in which Ids is measured by sweeping Vds under a fixed Vgs.
M
Published in Philip A. Laplante, Comprehensive Dictionary of Electrical Engineering, 2018
metal 2 the second layer applied in a fabrication process. In general the nth layer of the fabrication process is called metal n. metal halide molecule formed by the reaction of metals and halogen atoms. metal-electrode semiconductor field-effect transistor (MESFET) a specific type of FET that is the dominant active (amplifying) device in GaAs MMICs. An FET is composed of three terminals called the gate, drain, and source, and a conducting "channel." In an amplifier application, the source is connected to ground, and DC bias is applied between the drain and source causing a current to flow in the channel. The current flow is controlled and "modulated" by the AC or DC voltage applied to the gate. metal-insulator-metal (MIM) capacitor a capacitor, which has a thin insulator layer between two metal electrodes. Generally, this capacitor is fabricated in semiconductor process, and this insulator layer provides high capacitance. Two extreme behaviors of a capacitor are that it will act as an open circuit to low frequencies or DC (zero frequency), and as a short frequency at a sufficiently high frequency (how high is determined by the capacitor value). Also called a thin film capacitor. metal-organic chemical vapor deposition (MOCVD or OMCVD) a material growth technique that uses metal organic molecules in an atmospheric or low pressure growth chamber and a controlled chemical reaction on a heated substrate to grow a variety of II-VI, III-V, and group IV materials with atomic layer control. Used to create material structures for a variety of electronic and
Analysis of heat conduction in a nanoscale metal oxide semiconductor field effect transistor using lattice Boltzmann method
Published in Energy Sources, Part A: Recovery, Utilization, and Environmental Effects, 2023
Oussama Zobiri, Abdelmalek Atia, Müslüm Arıcı
The necessity of faster data processing, such as data transmission and data storage has been realized in recent years. During the data transmission by electrons to electronics, circuits may lead to unwanted hotspots (Chen 2005). The most commonly used materials in electronic industries are semiconductor materials. Among them, silicon (Si) is the dominating semiconductor material utilized for microelectronics devices (Nasri et al. 2015b). The Field-Effect Transistor (FET) is the essential component of semiconductor. The most popular type of isolated gate FET used in a variety of microelectronic is the Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). Hundreds of millions of semiconductors are assembled on a few square centimeters chip area (Pop, Sinha, and Goodson 2006). The channel region in the MOSFET was projected to be 13 nm in 2018, however, the miniaturization of MOSFET has already reached the nano-scale, and it is expected to be less than 6 nm in 2026 (Fiori et al. 2014).
A novel SOI MESFET to spread the potential contours towards the drain
Published in International Journal of Electronics, 2020
Mohaddeseh Mohtaram, Ali Asghar Orouji
Unlike Bipolar transistors (BJTs), Field Effect Transistors (FETs) are unipolar devices. It means, there is only one type of carrier, electron or hole, participate in the current of the channel, which makes it possible to exhibit high frequency and low noise behaviour. Among field effect transistors, Metal Semiconductor FETs (MESFET) have large applications in amplifiers, mixers, and oscillators. These devices are a voltage controlled component. In fact, a variable electric field controls the current of the source to the drain with changing the voltage applied to the gate. So far, various efforts have been made to improve the frequency and DC characteristics of MESFET transistors (Braga & Hiu Yung Wong, 2017; Dutta, 2016; Jia et al., 2015; Jia, Hu, & Zhu, 2018; Jia, Yang, & Zhang, 2013; Jia, Zhang, Xing, Luo, & Duan, 2015; Jia, Zhang, Xing, & Ma, 2015; Lakhdar & Lakehal, 2017; Mohtaram & Orouji, 2018)
Nanowire Transistors: A Next Step for the Low-Power Digital Technology
Published in IETE Journal of Research, 2021
D. Ajitha, K. N. V. S. Vijaya Lakshmi, K. Bhagya Lakshmi
The Nanowire technology can be used as the most basic component of the IC i.e. in place of the (FET). There are so many changes developed in the potentiometric sensors [45] based on FET. These also exhibit regular features of the normal classic MOSFET. All the FET-based devices are three-terminal configuration with a source, drain and gate. The metallic gate in MOSFETs is in direct contact with the dielectric over the channel, whereas the gate (reference) electrode in biological FET (BioFET) sensors is separated from the dielectric by a sample fluid. The surface potential, which acts as an extra gate voltage, is altered by changes at the dielectric-solution interface.