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Solution-Processed Oxide-Semiconductor Films and Devices
Published in Sam Zhang, Jyh-Ming Ting, Wan-Yu Wu, Functional Thin Films Technology, 2021
Bui Nguyen Quoc Trinh, Endah Kinarya Palupi, Akihiko Fujiwara
Transistors are semiconductor devices used to amplify or switch signals or power. It is currently embedded in integrated circuits being a key component of any electronic device, such as mobile phones, computers etc. In 1947, J. Bardeen and W. Brattain invented the first transistor known as the point-contact transistor (Figure 9.1(a)) which amplifies currents [1, 2]. Despite having unprecedented impact on the electronic industry, it was a relatively bulky device: bulky germanium was used as a semiconductor with two gold electrodes, which were an issue to be solved for mass production and integration. In 1960, M. M. Atalla and D. Kahng reported a MOSFET (Figure 9.1(b)), which provides a solution to the above-mentioned issue and has been a most important building block of modern electronics [3, 4]. In 1962, the thin-film transistor (TFT) (Figure 9.1(c)), a type of MOSFET, was developed by P. K. Weimer [5]. Since active semiconductor layers and other components are formed by deposition in TFTs, the quality of components including crystallinity is lower than that of the original MOSFET made of single crystalline wafers. On the other hand, owing to flexibility of the fabrication process, a wide variety of materials can be used as active semiconductor layers from elemental semiconductors to compound semiconductors including oxides. In addition, TFTs can be fabricated not only by deposition methods under high vacuum condition, such as molecular beam epitaxy (MBE), chemical vapor deposition (CVD) and laser ablation, but also by solution methods.
MOSFET Design and Its Optimization for Low-Power Applications
Published in Suman Lata Tripathi, Parvej Ahmad Alvi, Umashankar Subramaniam, Electrical and Electronic Devices, Circuits and Materials, 2021
P. Vimala, M. Karthigai Pandian, T. S. Arun Samuel
A MOSFET is a frequently used type of transistor with a “Metal Oxide” gate, and this part of the device is electrically sheathed from the channel of the semiconductor. And due to this phenomenon, we can say “NO current flows into the gate”. MOSFETs can generally be classified into two types – depletion mode and enhancement mode, and each of these two types has an n/p channel type.
DC Circuit Analysis, Diodes, and Transistors – BJT, MOSFET, and IGBT
Published in S. Bobby Rauf, Electrical Engineering Fundamentals, 2020
Similar to diodes, transistors are semiconductor devices. The approach to constructing transistors is similar to the approach used for fabrication of diodes. The “n” and “p” doping approach employed with the construction of transistors is shown in Figure 2.10. As somewhat evident from Figure 2.10, a transistor – functionally, and from construction point of view – appears as set of two diodes connected “back to back.” There are three major types of transistors: the BJT, or bipolar junction transistor, MOSFET, or metal-oxide-semiconductor field-effect transistor, and the IGBT, or insulated gate bipolar transistor. Although, in this text we will delve deeper into the operations and application of BJT transistors, we will discuss a few important facts associated with the MOSFET and IGBT transistors, and compare these three transistors, to a degree.
Process validation test of CNTFET using Stanford model
Published in International Journal of Electronics, 2022
Hamed Sarbazi, Reza Sabbaghi-Nadooshan, Alireza Hassanzadeh
Carbon Nanotube Field-Effect transistors (CNTFETs) are introduced as an alternative to MOSFETs due to their similarities. Because of the unique mechanical and electrical properties, CNTFET technology can overtake silicon technology. High mobility of charge carriers in CNTs causes the carriers to be faster in CNTs than in silicon transistors. Low power consumption, small dimensions, high signal-to-noise ratio, similarity to MOSFETs and ballistic transport are the advantages of CNTFETs. In recent years, carbon nanotube transistors have drawn much attention among researchers due to their unique properties. Many of digital circuits, such as inverter gates and memories, are simulated using these transistors. This process has not been limited to the simulation of digital gates and has gradually paved the way for analog circuits. Some low-noise amplifier circuits and oscillators use nano-transistors for simulations; this usage is still in progress (Perri, 2011).