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Smart Wireless Nanosensor Systems for Human Healthcare
Published in Suresh Kaushik, Vijay Soni, Efstathia Skotti, Nanosensors for Futuristic Smart and Intelligent Healthcare Systems, 2022
Nano-electromagnetic communication is the transmission and reception of electromagnetic radiation between nanosensors placed in human body to macro world devices and vice versa using nanoantennas and electromagnetic transceiver (Rutherglen and Burke 2009). The carbon-nanotube and graphene-based electronics provide a vast opportunity for electromagnetic communication among nanodevices in the terahertz (THz) band Recent advances allowing refinement of the existing architectures and the utilization of new technologies enabled THz communication paradigm to the verge of reality. For effective intra-body nanocommunication among devices, THz transmitters are required to be compact and capable of providing high levels of average output power at lower THz frequencies (Rizwan et al. 2018). For example, the miniaturized FinFET and the 3D tri-gate transistor transistors mitigate the undesirable behaviour of the short channel effect and increase the transistor channel dimension. Nano-antenna made of carbon nanotube and graphene or metallic plasmonic nanoantenna have been proposed in the literature for intra-body nanonetworks (Gul et al. 2010, Nafari and Jornet 2015).
Nanoscale MOSFETs and Similar Devices
Published in Vinod Kumar Khanna, Introductory Nanoelectronics, 2020
Four types of nanoFETs were covered in the chapter: the Si planar MOSFET, the FinFET, the Si nanowire FET, and the CNT FET. We first considered the silicon MOSFET. A short-channel MOSFET is one in which the channel length has a size comparable with the depletion widths of the source/drain junctions. Short-channel effects are the harmful effects observed in such a MOSFET. A prominent short-channel effect is the lowering of the source-channel potential barrier because this barrier, which was solely controlled by the gate voltage in a long-channel MOSFET, becomes accessible to the drain voltage with the drain terminal coming closer to the source terminal in a short-channel MOSFET. Consequently the threshold voltage of the MOSFET decreases and the leakage current increases. Punchthrough voltage breakdown occurs when the depletion regions of the source and drain junctions touch each other.
Static Random Access Memory (SRAM)
Published in Shimeng Yu, Semiconductor Memory Devices and Circuits, 2022
As introduced earlier, FinFET is a key enabler for technology scaling beyond the 22 nm node. Figure 2.30 shows the schematic of a planar transistor and a non-planar FinFET. The thin fin is typically etched down from the bulk silicon’s surface. FinFET has one or multiple thin fins that conduct the current (that still flows at the interface of silicon and gate oxide). The FinFET typically has a tri-gate structure where the gate is covering both sides of the fin and the top of the fin. The enhanced gate-to-channel coupling helps mitigate the short channel effect. The FinFET concept was first experimentally proved by Prof. Chenming Hu’s group at UC Berkeley in 1998 [10].
Effects of Total Dose Radiation on Single Event Effect of the Uniaxial Strained Si Nano NMOSFET
Published in IETE Journal of Research, 2023
Minru Hao, Yan Zhang, Min Shao, Guoxiang Chen, Bin Wang
With the decrease of channel size, a series of Non ideal effects will be introduced, and especially the short channel effect (SCE), DIBL and other small size two physical effects will cause serious degradation of the electrical performance of the device. In order to effectively suppress the above effects, LDD and HALLO structures should be added to the device design. Meanwhile, ultra shallow junction technology and self-alignment technology are also used to ensure that the prepared devices have excellent electrical characteristics. The basic process flow of device preparation is shown in Figure 2. The default and optimized parameters values are shown in Table 1. The parameters of the heavy ion model are shown in Table 2. let_f and wt_hi are linear energy transfer and radius of the heavy ions, respectively. The direction (0, l) indicates that the heavy ion is injected vertically.