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Conduction Mechanism and Performance Evaluation of Advance Nanoscale Semiconductor Devices
Published in Cherry Bhargava, Amit Sachdeva, Nanotechnology, 2020
Jeetendra Singh, Balwant Raj, Balwinder Raj
Since short channel effects are a major concern in the nanoscale regime and prevent further scaling so as to avoid the SCEs, a surrounding gate usage is found to be an effective method. The surrounding gate is a way by which the gate is overlapped all around the channel and thus provides strong control over the channel from all directions [45]. It is reported that the use of the tri-gate can reduce the fabrication technology up to 22 nm [46]. A double gate gives double-inversion layers and thus increases the charge carriers or the capacity of the channel and also reduces the proportion of the leakage current. The tri-gate covers the channel from the three sides and thus gives more drive current by creating a stronger inversion layer on the underside of the gate [47]. The tri-gate technology is extended to the gate all around which is also called nanowire, hence achieving strong control of the gate over the channel and thus the drive current. It also removes the limitation of further scaling below 22 nm [48].
Protection of Systems from Surges and Transients
Published in Nihal Kularatna, DC Power Supplies Power Management and Surge Protection for Power Electronic Systems, 2018
With integrated circuits gradually progressing toward system-on-chip (SoC) concepts with a massively increased number of transistors, the feature size of the transistors was gradually dropping toward less than 0.1 µm. For example, companies such as Intel are planning to progress into 22 nm semiconductor processing as early as 2012. Figure 9.4(a) indicates the Moore’s law-based general progress of integrated circuits, while the DC rail voltages are dropping toward sub-1.0 volt levels. With the equivalent noise levels increasing within the complex ICs, dropping of the logic levels makes the scenario even much more complex [3]. Figure 9.4(b) indicates the development of processors similar to the Intel family, and their power supply requirements. Figure 9.4(c) indicates the scenario in terms of clock speed, power consumption, and, most importantly, the equivalent impedance of the equivalent processor load. With the processor equivalent impedance dropping below 1 milliohm, while the DC rail voltages were dropping toward sub-1 V levels, if a transient surge voltage appears on the power supply, it could create disastrous consequences.
Technology Needs for Modular Pixel Detectors
Published in Salah Awadalla, Krzysztof Iniewski, Solid-State Radiation Detectors, 2017
In comparison, the digital signal-processing side of the measurement chain can benefit from the rapid development of deep submicron processes. Science applications have used 0.25, 0.18, and 0.135 μm, and are now using 65 nm [19] and proposing 22 nm technologies for digital components. These technologies are well suited to high-speed analog-to-digital converter (ADC) architectures and to very fast data manipulation for data sparsification and packaging. The technologies have their own limitations in terms of gate-oxide thickness, noise, and cost. The nanometer gate oxides and small interdevice distances reduce the power supply range and can introduce noise problems. A major practical problem is the cost of a mask set and engineering wafer batch, and also the design complexity, which increases design engineer costs. A full ASIC development can easily cost over EUR 1,000,000 and extend over 2 years, which can be a significant problem for the budget of some scientific experiments.
Comprehensive Design and Timing Analysis for High speed Master Slave D Flip-Flops using 18 nm FinFET Technology
Published in IETE Journal of Research, 2021
N. Shylashree, Varchas S. Bharadwaj, D. Yashas, Vinayak Kulkarni, Ajay Bharadwaj, Vijay Nath
An in-depth analysis of sizing of transistors has been performed in [12], with the CMOS inverter as the chosen circuit. It also gives emphasis on identical rise and fall time. A comparison has been done between MOSFET and FinFET-based STT-RAM based on the access times for each of the designs can be seen in [13]. A modern approach to have accurate timing and minimum power consumption is showcased by designing a Change-Sensing Flip-Flop. The designed change sensing FF reduces power consumption by 44.37% when compared with TGFF and has setup and hold time of 47.70 and −15.15 ps respectively [14]. The various Architectures of FinFET has been discussed [15]. Defects in FinFET logic circuits and simulation of faulty behavior have been discussed [16]. The FinFET technology used is 22 nm. The results show that FinFET is much faster than MOSFET, especially at lower channel lengths [17].