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Numerical Study of a Symmetric Underlap S/D High-ĸ Spacer on JAM-GAA FinFET for Low-Power Applications
Published in Shubham Tayal, Abhishek Kumar Upadhyay, Deepak Kumar, Shiromani Balmukund Rahi, Emerging Low-Power Semiconductor Devices, 2023
Transistors need to have features like less power dissipation, lower leakage current, higher current-driving capability, enhanced operational frequency, etc., to meet the present-day demands of ULSI industries [1]. Consequently, the quantity of transistors has been increased, whereas the transistor size has been gradually reduced to the sub-10 nm regime to accomplish these demands [2]. The continuous reduction in transistor size results in unwanted short-channel effects (SCEs) such as threshold voltage roll-off, mobility degradation, subthreshold swing (SS), and drain-induced barrier lowering (DIBL) [3–6]. The I–V characteristics of the device deteriorate considering the minimized gate control area over the channel in short-channel devices. Numerous device structures have been proposed to suppress these effects, such as multigate MOSFET [7], cylindrical gate MOSFET [8,9], recessed channel MOSFET [10–12], TFETs [13], and FinFETs [14,15]. FinFET, due to its characteristics, like enhanced drive-current capability, amplified electrostatic control over the channel, reduced leakage current, etc., has gained acceptance as a capable device to overcome the SCEs effectively [16]. The gate all around (GAA) structure was put forward to escalate the subthreshold FinFET performance [17,18]. Due to the high gate control area over the channel, the GAA FinFET is more electrostatically stable than the conventional FinFET. Subsequently, the device size can be further reduced without compensating the performance.
Nanosensor Laboratory
Published in Vinod Kumar Khanna, Nanosensors, 2021
During the past several decades, CMOS (complementary metal-oxide semiconductor) integrated circuits have been at the frontiers of research and development globally. Research activities in this field have expanded exponentially and a revolution is apparent, leading to reliable, low-cost ICs for consumer electronics, computer, and telecommunication sectors (Khanna 2004; 2007b). Deep submicron (DSM) technology involves the use of <0.35 μm (<350 nm) and ultra-deep submicron (UDSM) <0.25 μm (<250 nm) feature sizes in ICs. State-of-the-art nano-CMOS. technologies work in the 22 nm and 10 nm nodes which will be extended to 5 nm node (Radamson et al 2019). With reference to the International Roadmap for Devices and Systems: 2017 Edition, logic industry node range labelling is done as 5 nm (2021), 3 nm (2024), 2.1 nm (2027), 1.5 nm (2030) and 1.0 nm (2033); year of production is enclosed in brackets. Although the resolution of optical lithography is gradually increasing, known or proven methods for the anticipated ultra-small structure sizes are lacking. EBL or XRL can meet this goal but low-cost solutions for mass production are still elusive.
Introduction
Published in Eiichi Kondoh, Micro- and Nanofabrication for Beginners, 2021
The diameter of a human hair is approximately 200–300 µm. E. coli cells are a few µm long, and a DNA has a diameter of 2 nm. The minimum dimension of components of integrated circuits is 10 nm (and below 1 nm in thickness). This size is smaller than or as small as that of viruses. It is about 10−8 times smaller than human beings. Then to what are human beings 1 × 10−8 smaller? Human beings have a scale of 1 m and an object 8 orders of magnitude larger has a scale of 10,000 km. It is as large as the Earth. In micro-/nanotechnologies, components of 10 nm are fabricated.1 One can imagine that placing a nanocomponent in a device is same as a human-sized object being placed somewhere on Earth, e.g., a stool in a room.
Is India going to be a major hub of semiconductor chip manufacturing?
Published in IETE Technical Review, 2021
The chip manufacturing is increasingly controlled by integrated device manufacturers (such as Samsung) and pure play foundries (such as TSMC). Fab-less companies such as Qualcomm, Broadcom and Nvidia too play a critical role in the growth of semiconductor industry worldwide. Many of these companies are focusing on sub-10 nm technologies for their future growth in high performance computing (HPC) and smart phones.