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Design Challenges and Solutions in CMOS-Based FET
Published in Suman Lata Tripathi, Sobhit Saxena, Sushanta Kumar Mohapatra, Advanced VLSI Design and Testability Issues, 2020
Madhusmita Mishra, Abhishek Kumar
On balance, FinFET technology offers a bright future of device scaling. It is an indispensable technology for high-performance (HP) and power-sensitive applications ranging from mobile smartphones to enterprise computing and networking. The technology introduces new design challenges that can be properly addressed with the growing knowledge and experience of designing with FinFETs to ensure design success. FinFET structure is less efficient in terms of heat dissipations, as heat can quickly be accumulated on the fins. These concerns can lead to a new class of design rule—design for thermal, unlike other design rules such as design for manufacturability. As these devices are approaching their limitations, there is a need for modification in device structure, replacing existing silicon material with new materials. Among them, CNTFET, gate-all-around NW FET, or FinFETs with compound semiconductors may prove as promising solutions.
Effect of Ground Plane and Strained Silicon on Nanoscale FET Devices
Published in Brajesh Kumar Kaushik, Nanoscale Devices, 2018
Saurabh Chaudhury, Avtar Singh
FinFET is the fin-shaped field effect transistor that has much higher immunity to short-channel effects and has higher charge mobility. Therefore, it is expected to have an increased saturation current. In recent years, different types of FinFETs have been proposed, fabricated, and deployed. Mostly, FinFETs are classified based on controlling the flow of charge carriers using different types of gates such as double gate, Pi- gate, surrounding gate, gate all around, and omega gate. FinFET devices are built on both types of wafers-bulk and SOI. SOI-type FinFET has relatively less leakage current, lower parasitic capacitances, higher saturation current, less sensitivity to body doping and better subthreshold slope as compared to bulk type. On the other hand, bulk FinFET is cheaper than SOI FinFET. Moreover, a self-heating problem is also not present in the bulk SOI [8].
The Driving Forces Behind Moore’s Law and Its Impact on Technology
Published in Lambrechts Wynand, Sinha Saurabh, Abdallah Jassem, Prinsloo Jaco, Extending Moore’s Law through Advanced Semiconductor Design and Processing Techniques, 2018
Lambrechts Wynand, Sinha Saurabh, Abdallah Jassem
A FinFET is a type of multi-gate MOSFET where a thin silicon film is enfolded over the conducting channel of the substrate. The structure looks like a set of vertical fins, thus the name FinFET. The thickness of the device determines its channel length. In Huang et al. (2001), during the early days of FinFET technology, which was invented in the late 1990s, the FinFET was described as A transistor channel, which is formed on the vertical surfaces of an ultra-thin silicon fin and controlled by gate electrodes formed on both sides of the fin.Dual gates, self-aligned both in conjunction with each other as well as with respect to the source and the drain sections to reduce the parasitic capacitance and resistance, as well as to control the absolute channel length.The physical construction of raised source/drain regions.A short fin of silicon to sustain quasi-planar geometry and topology (since the source/drain and gate are considerably thicker/taller) in order not to make the construction overly complex.
A Novel Design of Low Power & High Speed FinFET Based Binary and Ternary SRAM and 4*4 SRAM Array
Published in IETE Journal of Research, 2023
N. Shylashree, M. S. Amulya, Gulur R. Disha, N. Praveena, Vijay Kumar Verma, S. Muthumanickam, V. Kannagi, K. Sivachandar, Vijay Nath
To ensure the power consumption of the designed SRAM cell is as low as possible, Fin Field Effect Transistor (FinFET) technology is used. The other advantages of FinFET are higher output current per input voltage, higher switching speeds, and reduced short-channel effects. FinFET is a type of non-planar transistor that is used in the design of various digital circuits. There is a gate electrode, shaped like a fin present in the FinFET design. All transistor designs in this paper are done using 18nm FinFET technology.
An Overview on MOSFET Drivers and Converter Applications
Published in Electric Power Components and Systems, 2021
Mustafa Ergin Şahin, Frede Blaabjerg
As a novel, a fin field-effect transistor (FinFET) is a multi-gate device. A MOSFET is built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure. These devices are called FinFETs because the source/drain region includes fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar complementary metal-oxide-semiconductor (CMOS) technology [103].
Comprehensive Design and Timing Analysis for High speed Master Slave D Flip-Flops using 18 nm FinFET Technology
Published in IETE Journal of Research, 2021
N. Shylashree, Varchas S. Bharadwaj, D. Yashas, Vinayak Kulkarni, Ajay Bharadwaj, Vijay Nath
A thorough literature survey was carried out and several technical journals and dissertations were referred. A few of them have been discussed. The comparison between Complementary Metal Oxide Semiconductor (CMOS) and FinFET has been carried out for a 4-Bit Multiplier in [1] and for a domino logic circuit in [2]. The results show that FinFET designs are much faster and consume less power compared to the MOSFET designs.