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Transistors
Published in Amir M. Sodagar, Analysis of Bipolar and CMOS Amplifiers, 2018
In practice, electrical behavior of the channel is affected by the voltage across it, which is υDS. The physical phenomenon that causes this effect is known as channel-length modulation. Because of this phenomenon, the drain current in saturation mode proportionally follows the variations in the drain-source voltage. To include the channel-length modulation effect, the characteristic equation of an MOS transistor becomes: () iD=β2(υGS−VTH)2(1+λυDS),
Technological Challenges and Solutions to Advanced MOSFETs
Published in Suman Lata Tripathi, Parvej Ahmad Alvi, Umashankar Subramaniam, Electrical and Electronic Devices, Circuits and Materials, 2021
Channel length modulation reduces depletion width in the channel and it is caused by charge distribution among the source, drain and gate [20] as schematically shown in Figure 6.4b. Due to the reduction of depletion charges, a small threshold voltage is sufficient to invert the channel, which is termed threshold voltage roll-off. The shared charge becomes a significant factor for low dimensions, and this results in a threshold voltage roll-off with lowering of gate length.
Bias and Current Reference Circuits
Published in Tertulien Ndjountche, CMOS Analog Integrated Circuits, 2017
A proper operation of the current mirror then relies on the insensitivity of the achievable transistor matching to the effects of process variations. Furthermore, the use of long channel transistors whose substrates are connected to the corresponding sources may be necessary to reduce current variations related to the effects of the channel length modulation.
A new low voltage low power fully differential CMOS class AB current output stage with unique current drive capability
Published in International Journal of Electronics, 2023
Behnam Abdoli, Seyed Javad Azhari
Second, conventional COS suffers from weak linearity and low output impedance which are due to the simple current mirrors in the signal path to the output. The main source of poor linearity is the channel length modulation effect which is inherited from the difference between the drain-source voltages of mirroring transistors. Some techniques are introduced in (G. Pennisi et al., 1995; Palmisano et al., 1998; Zeki & Kuntman, 2000) to improve the linearity and enhance the output impedance by adding OTA. These structures have improved the linearity and output impedance by using complex and area inefficient auxiliary amplifiers and cascode structure which is in contrast to low voltage approach.
An Overview on MOSFET Drivers and Converter Applications
Published in Electric Power Components and Systems, 2021
Mustafa Ergin Şahin, Frede Blaabjerg
One of several short-channel effects in MOSFET scaling, channel length modulation (CLM), shortens the length of the inverted channel region with an increase in drain bias for significant drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. Channel-length modulation occurs in all field-effect transistors, not just MOSFETs. Channel-length modulation in active mode usually is described using the Shichman–Hodges model [104]. Channel-length modulation is essential because it decides the MOSFET output resistance, a necessary parameter in the circuit design of current mirrors and amplifiers [105].