China
Africa
Explore chapters and articles related to this topic
Semiconductor Physics and Devices
Published in Manoj Kumar Majumder, Vijay Rao Kumbhare, Aditya Japa, Brajesh Kumar Kaushik, Introduction to Microelectronics to Nanoelectronics, 2020
Manoj Kumar Majumder, Vijay Rao Kumbhare, Aditya Japa, Brajesh Kumar Kaushik
BJT is available in two different types: NPN and PNP BJTs. The BJT is a three-terminal device. The terminals are labelled as the base, the emitter, and the collector. The symbols are shown in Figure 1.25.
Electrical Parameter Variations in Bipolar Devices
Published in Pradeep Lall, Michael G. Pecht, Edward B. Hakim, Influence of Tempemture on Microelectronics and System Reliability, 2020
Pradeep Lall, Michael G. Pecht, Edward B. Hakim
The current gain of the bipolar junction transistor is the collector current divided by the base current, otherwise known as βcg,de. The d.c. current gain is expressed as βcg,de=ICIB
Force-System Resultants and Equilibrium
Published in Richard C. Dorf, The Engineering Handbook, 2018
Active region - The region of transistor operation in which the output current is relatively independent of the output voltage. For the BJT, this corresponds to the condition that the emitter base junction is on, and the collector base junction is off. For the FETs, this corresponds to the condition that the channel is on or open at the source end and pinched off at the drain end.
An Overview on MOSFET Drivers and Converter Applications
Published in Electric Power Components and Systems, 2021
Mustafa Ergin Şahin, Frede Blaabjerg
The basic structure of MOSFETs and switching principles must be known well to understand better and analyze MOSFET driver circuits. The MOSFETs have channel occurred and channel adjusted types as seen in a p-type substrate, and the n-type source-channel occurred MOSFET structure in Figure 1(a). An n-type semiconductor region between the source to drain, which is to supply the current flow from the source to the drain, is called a channel. If a VDSvoltage is applied between the source and drain and the VGS voltage is larger than the threshold voltage, the channel is larger, and the resistance decrease, so the drain current increases. Power MOSFET is used to switch large amounts of currents usually constructed in V-configuration, as seen in Figure 1(b). This configuration has a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths. The combination MOSFET and Bipolar Junction Transistor (BJT), known as an Insulated Gate Bipolar Transistor (IGBT), which is typically used in higher power applications, are shown in Figure 1(c) [101].
Design of Low-Voltage and Low-Power DTMOS Based Analog Multiplier Utilizing Current Squarer
Published in International Journal of Electronics Letters, 2021
Analog multipliers are very useful blocks for numerous applications with regard to biomedical, frequency doublers, modulators, adaptive filters, analog signal processing, neural networks, etc. Basically, an analog multiplier topology generates a linear product of two input signals and yields , where and are the input signals and is a constant. Gilbert (Gilbert, 1968) has introduced the first analog multiplier using bipolar junction transistor (BJT) in 1968. Consuming low power and requiring low power supply voltages are quite important for analog multiplier design. Different techniques such as operating the transistor in the subthreshold region (Boonchu, 2018) and utilising floating-gate MOS (FGMOS) (Keleş & Keleş, 2020) are used to decrease the power dissipation. A circuit on a technique which is called DTMOS has been suggested in a study done by Babacan (Babacan, 2018). Both bulk and gate terminals of MOS transistor are connected together to obtain DTMOS structure. By doing this, the power dissipation of the circuits becomes less compared to the circuit with conventional MOS transistors.
Sub-1 V, 5.5 ppm/°C, High PSRR all CMOS Bandgap Voltage Reference
Published in IETE Journal of Research, 2020
In a conventional BGR, the voltage across the base-emitter (VBE) of a bipolar junction transistor generates the CTAT, which is compensated by the PTAT voltage generator. As a result, the output reference voltage Vref has low-temperature dependence, which is obtained by the summation of the CTAT voltage and PTAT voltages multiplied by a gain factor k. In contrast, the proposed circuit is shown in Figure 1 consists of an all CMOS bandgap core to generate the CTAT and PTAT voltages. Moreover, MP1–MP3 transistors form a CMR (PSRR enhancement 1) for isolation between the power supply source and the BGR circuit area. An additional stage (PSRR enhancement 2) is used to enhance the PSRR performance further. Transistor MST is used to quick-start the BGR. Furthermore, M1–M4 and MSB1–MSB2 represent the self-biased op-amp configuration. This section illustrates the working principle of the individual modules of the proposed BGR.