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Radiation Failure Mechanisms
Published in Judy Pecht, Michael Pecht, Long-Term Non-Operating Reliability of Electronic Products, 2019
The electrical failure modes caused by radiation dictate, in part, the choice of packaging materials. Radiation effects can be a serious obstacle to further rapid increases in VLSI densities, particularly in memory chips, which usually lead other microelectronics technologies in advanced development. Cosmic rays or high-energy particles (electrons, photons, muons, pions, neutrons, or alpha particles) can cause sudden random electrical failures in an ionization event — known as a single-event upset (SEU) or soft error — by passing through the microcircuit and adding enough charge to surpass the critical charge (100 fC) that represents a bit, thus temporarily changing the logic state. Single-event upsets are a consequence of the evolution of integrated circuits; increased density and speed and decreased power and cost per bit have been accomplished by decreasing both the cell size and the critical charge that represents a bit. As memory sizes increase and memory cell sizes shrink, the number of single-event upsets increases.
Memory Devices
Published in Chinmay K. Maiti, Introducing Technology Computer-Aided Design (TCAD), 2017
Another important area of concern for nanoscale SRAM is increased susceptibility to radiation-induced soft errors. Soft errors in the form of both single-event upsets (SEUs) and SRAM array multibit fails represent a reliability concern for the memory designer. The two primary sources of soft error–inducing radiation are terrestrial radiation and radioactive isotopes within materials used in the IC fabrication process. High-energy cosmic radiation interacting with the earth’s atmosphere results in a flux of neutron particles with a large range of energies extending to several 100 MeV. This process produces a charge cloud of electron–hole pairs that, when in close proximity to one or more sensitive neighboring circuit nodes, may result in a single- or multibit error.
Space Debris Mitigation Based on Commercial Off-the-Shelf Technologies
Published in M. Madi, O. Sokolova, Space Debris Peril: Pathways to Opportunities, 2020
The SEE is a probabilistic effect caused by radiated particles. It can lead to single-event upsets (SEUs), which cause bit inversion of logical devices and memories. The effect of an SEU is based on characteristics measured by a particle radiation test. If necessary, software-based countermeasures can be adopted, such as the installation of an error correction code, to protect against SEUs. Simple intermittent resetting of the central processing unit (CPU) is also a countermeasure against SEUs for simple applications. The SEE can also cause single-event latch-ups (SELs), which cause tentative overcurrent conditions. In general, an SEL can be addressed by a swift power reset of the relevant devices.
Low-cost and high-performance visual guidance and navigation system for space debris removal
Published in Advanced Robotics, 2021
Shinichi Kimura, Eijiro Atarashi, Taro Kashiwayanagi, Kohei Fujimoto, Ryan Proffitt
SEE is a probabilistic effect due to the radiated particles. This can lead to single-event upsets (SEUs), causing a bit inversion of logical devices and memories. The effect of SEU relies on the characteristics measured by a particle radiation test. If necessary, software-based countermeasures, such as the installation of an error correction code, can be adopted to protect against SEUs. SEE might cause single-event latch-ups (SELs), which cause tentative overcurrent conditions. In general, an SEL can be addressed using a swift power reset of the relevant devices.