FET amplifier

FET amplifier

InGaP-HBT Power Amplifiers

Published in Krzysztof Iniewski, Circuits at the Nanoscale, 2018

In the HBT PAs, bias circuits play the important role of distortion characteristics as well as temperature dependence of quiescent current. This is much different from usual field-effect transistor (FET) amplifier design, because CDMA HBT PAs consume base current on the order of several microamperes to several milliamperes. In contrast, the FET amplifiers hardly consume gate current, and hence the FET amplifier allows us to use very simple bias circuit such as a resistive divider. This section describes the bias circuit design and the relationship between the bias circuits, distortion characteristics, output matching conditions while introducing circuit simulations useful for practical design.

A novel SOI MESFET to spread the potential contours towards the drain

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Journal Information

Published in International Journal of Electronics, 2020

Mohaddeseh Mohtaram, Ali Asghar Orouji

In addition, the maximum oscillation frequency (fmax), is another important frequency characteristic that shows the high frequency of the FET amplifier when the power gain is equal to one and is obtained from the following equation (Deng, Sun, Rao, & Zhang, 2013):

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InGaP-HBT Power Amplifiers

A novel SOI MESFET to spread the potential contours towards the drain