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Design of Gate-All-Around TFET with Gate-On-Source for Enhanced Analog Performance
Published in Ashish Raman, Deep Shekhar, Naveen Kumar, Sub-Micron Semiconductor Devices, 2022
Navaneet Kumar Singh, Rajib Kar, Durbadal Mandal
The capacitance, Cgs, is found to be greater than Cgd, and the overall gate capacitance is the summation of these two capacitances. Transconductance is the rate of change in drive current with respect to Vgs at constant drain voltage. The transconductance and its derivatives are depicted in Figure 9.6(a–c), respectively. Transconductance shows the magnitude of the current developed after the application of Vgs. Transconductance represents the gain, and its derivatives signify the amount of nonlinearity that exists in the device. The higher-order derivatives of transconductance must be minimized. Transconductance is compared for all the devices, and the highest transconductance found is that for NWTFET-GOS.
Basics of Amplifiers
Published in Amir M. Sodagar, Analysis of Bipolar and CMOS Amplifiers, 2018
Unlike the gain of voltage and current amplifiers, which was dimensionless, the gain of a transconductance amplifier is of conductance nature and will be in units of A/V (Siemens or Mho). This is because such an amplifier converts a voltage to a current, and based on the Ohm’s law, it functions as a kind of conductance. For a regular conductance, however, the application of a voltage causes a proportional current to flow across the same terminal. Here, the voltage is applied between two nodes and the proportional current is taken from two different nodes — thus the prefix “trans.” The gain of a transconductance amplifier is referred to as the amplifier’s transconductance.
Structure of Bipolar Junction Transistor
Published in Michael Olorunfunmi Kolawole, Electronics, 2020
The ratio (IC/VT) is called transconductance (denoted by gm) whose unit is in Siemens, S. Consequently, ic=βib=gmvbe
A Novel Double-Gate MOSFET Architecture as an Inverter
Published in IETE Journal of Research, 2022
The layout of the proposed DGMOSFET-I and TCAD device cross-sectional view is shown in Figure 9(a,b), respectively. The active layer, source/drain contact, poly, and the substrate are shown in the layout. The design of the physical layout is more linked to the overall performance of the circuit, such as power dissipation, speed, etc. The layout of the inverter presented in the figure shows the MOSFET in n-mode and p-mode. Also, it is highly important to understand the performance parametric values calculated for the proposed device in n-mode and p-mode. Table 2 shows the performance parametric values for p-mode and n-mode at different channel lengths. Figure 10 shows the variation of the transconductance of n-type device vs. gate voltage for different channel lengths. The transconductance is a key parameter used for validating the MOSFET performance in electronic design. The transconductance is the ratio of drain current (Id) to gate–source voltage (Vgs) when a constant drain voltage is applied. Also, the comparison of results obtained on n-type double-gate FET in this work with results published in the literature for the same device is presented in Table 3. The proposed device (this work) exhibits good performance parameters. The best results obtained for the proposed device compared with the literature prompts us use the same device as an inverter incorporated in the same device, which reduces the footprint area.