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TCAD of Advanced Transistors: SiGe HBTs
Published in John D. Cressler, H. Alan Mantooth, Extreme Environment Electronics, 2017
Semiconductor technology computer-aided design, or TCAD, typically refers to the use of computer simulations to develop and optimize semiconductor processing technologies, and the resulting semiconductor devices, typically transistors. Commercial TCAD began with formation of the company Technology Modeling Associates (TMA) in 1979, which is now part of Synopsys. The company was cofounded by Professor Bob Dutton at Stanford University, based on the research of his group, represented by two famous computer programs: Stanford University Process Engineering Models (SUPREM) for process TCAD and PoIsson and Continuity Equation Solver (PISCES) for device TCAD. PISCES became Medici in TMA’s offerings. These two programs were also commercialized by Silvaco, as ATHENA and ATLAS. A third TCAD company, Integrated System Engineering (ISE), was founded in 1993, offering DIOS and DESSIS. ISE was later acquired by Synopsys. At present, Synopsys and Silvaco are the two primary TCAD vendors.
Introduction
Published in Chinmay K. Maiti, Introducing Technology Computer-Aided Design (TCAD), 2017
TCAD may be used for computer-aided design of semiconductor devices, fabrication process design and development, technology characterization for circuit design, manufacturing yield optimization and process centering, and computer-integrated manufacturing. Complementing experimental work, the TCAD combination allows optimizing and predicting the performance of new devices. It is therefore appropriate to use TCAD tools to study comprehensively the necessary requirements for realizing the ultimate limit of CMOS and bipolar scaling, which poses serious technology and design challenges. Simulation is now an essential tool for technology development. In fact, numerical modeling is the only way to provide comprehensive investigations of the front-end-of-line (FEOL) process-induced strain in silicon using piezoresistive-related physics.
Computer-Aided Analysis
Published in Wai-Kai Chen, Computer Aided Design and Design Automation, 2018
J. Gregory Rollins, Peter Bendix
Programs that do optimization are part of a larger set of software that is sometimes called TCAD (technology computer-aided design). Typically, TCAD encompasses software for process simulation (doping distributions), device simulation (electrical characteristics), device modeling, and circuit simulation. Other elements of TCAD can include lithography simulation, interconnect modeling (capacitance, resistance, and inductance), etc.
Dependence of Lateral Straggle Parameter on DC, RF/Analog, and Linearity Performance in SOI FinFET
Published in IETE Journal of Research, 2021
Rajesh Saha, Brinda Bhowmick, Srimanta Baishya
Simulation is performed in Sentaurus TCAD simulator [28]. Prior to perform simulation, the TCAD physics models are calibrated with experimental data [29]. The models considered in simulator are: the drift-diffusion model to consider the transport of the carriers; the doping dependent Masetti model is considered to study the effect of impurity scattering; due to the presence of degenerate source/drain regions, Fermi Dirac Statistics is considered; Shockley Rad Hall (SRH) is enabled for generation and recombination. To get proper matching between TCAD models and experimental data, we have modified the mobility parameters and such mobility parameters are mentioned in our previous work [30]. These calibrated physics models are used in all simulations in this work. The calibration between the simulator and experimental data is shown in Figure 3.