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Contemporary Machining Processes for New Materials
Published in E. S. Gevorkyan, M. Rucki, V. P. Nerubatskyi, W. Żurowski, Z. Siemiątkowski, D. Morozow, A. G. Kharatyan, Remanufacturing and Advanced Machining Processes for New Materials and Components, 2022
E. S. Gevorkyan, M. Rucki, V. P. Nerubatskyi, W. Żurowski, Z. Siemiątkowski, D. Morozow, A. G. Kharatyan
Ion implantation techniques introduce elements into target surfaces through implantation of ions that are typically accelerated to energies between 20 and 200 keV. This process operates in a high-vacuum environment and the ions are able to penetrate solid materials up to the depth of several nanometers, which increases as bias voltage rises (Gan and Berndt, 2015). One of the most valuable aspects of ion implantation consists in creating surface layers with enhanced wear or corrosion resistance without significant dimensional changes. For instance, creation of nitrides through nitrogen implantation, near-surface TiC through implantation of Ti followed by C, or ion beam mixing of thin RF-deposited surface layers of Al, Si, Mo, and W into steel, all result in geometric changes of less than 100 nm, yet combined with significant improvements in wear and friction properties (Halada and Clayton, 2012).
Fabrication Tools
Published in Vinod Kumar Khanna, Introductory Nanoelectronics, 2020
Ion implantation is a process to modify the surface of a material by bombarding it with ions of the desired material having sufficient energy (typically 10–500 keV and up to MeV) to penetrate significantly into targeted surface and become embedded, thereby altering its physical and chemical properties. The equipment (Figure 16.15) consists of an ion source (e.g. thermionically emitted electrons from a tungsten filament colliding with dopant gas (PH3, AsH3, BF3) molecules to cause ionization), an ion extraction electrode (which pulls out the ions from the source using a high electric field), an ion selection chamber (where the required ions are separated by a magnetic field mass analyzer by gyro radii of ions so that ions of correct charge-to-mass ratio can pass through a slit), an ion accelerating column (where the ions are electrostatically speeded to final kinetic energy), and a doping chamber (where the ion beam impinges upon and scans the wafer surface).
Plasma Immersion Ion Implantation at Elevated Temperatures
Published in Ken N. Strafford, Roger St. C. Smart, Ian Sare, Chinnia Subramanian, Surface Engineering, 2018
R. Hutchings, M. J. Kenny, D. R. Miller, W. Y. Yeung
THE process of ion implantation provides a versatile and controllable method for modifying the surface composition and properties of materials. Although it has been shown to be very effective in improving the wear resistance of a range of metals [1,2], its widespread application has been hindered by both real and perceived limitations [3]. Among these are the extremely shallow treatment depth (of the order of 100 nm) and the need for the target and/or the beam to be manipulated to achieve uniform surface coverage. The technology required for a reliable high current ion source has also meant that implantation facilities have generally been restricted to major research laboratories.
Evaluation of argon ion impact parameters in aluminium oxide by means of SRIM program and investigation of the effect of argon ion implantation on the thermoluminescence properties aluminium oxide
Published in Radiation Effects and Defects in Solids, 2023
S. Nsengiyumva, B. Khabo, N. Mongwaketsi, L. Pichon
Ion implantation, being a surface modification technique, has been used to induce lattice disorder and produce defects in materials. These defects have been shown to act as electron traps or recombination centres. A proper selection of impurities, ion energy (typically between 10 and 200 keV), ion fluence and fluence rate can control luminescence and generate optical absorption bands (9). Many studies including that of Wick et al (10) and Daniels et al (11) have shown that the presence of defects is considered essential for thermoluminescence to occur. Thermoluminescence (TL) is a phenomenon of emission of light by an insulator or a semiconductor as a result of exposure to ionising radiations such as beta rays, X-rays and gamma rays. This phenomenon comes into play when heat is applied to stimulate the release of energy stored during irradiation. The basic effect leading to the production of TL is the trapping of charge carriers, i.e. electrons and holes, produced during exposure to irradiation at defect sites in the material.
Effects of microstructure and nanohardness of the 8Cr4Mo4V steel under high-dose-rate N-PIII
Published in Transactions of the IMF, 2023
Bin Miao, Xinghong Zhang, Xinxin Ma
Among all the techniques of surface treatment, plasma immersion ion implantation offers the advantage to modify both the mechanical and chemical properties of the treated materials without affecting the surface finish.16–20 The ion implantation technique can significantly modify the composition of surface layers and improve the hardness, yield strength, wear, and fatigue resistance of structural components.21,22 Most of the published works related to bearing steels have focused on the effect of chromium and nitrogen implantation on their tribological behaviour.23,24 Some other studies refer to the effect of other implanted elements in bearing steels, such as tantalum,25 carbon,26 and zirconium.27 Nevertheless, a few studies have evaluated the surface properties and conditions of 8Cr4Mo4V implantation with nitrogen ion, including energy and dose.
Nobel Ag–Cu ion-exchange bimetallic nanoclusters formation over gold ion (Au2+) implanted materials RBS and optical study
Published in Radiation Effects and Defects in Solids, 2021
A. C. Ferdinand, D. Manikandan, P. Manikandan, G. Kavitha, R. Gaur, M. Maaza, E. Manikandan
It involves the introduction of the metal ions of interest into the dielectric glass matrix and is made to aggregate by means of proper subsequent treatments such as low mass ion irradiation, heat-treatments in reducing atmosphere, and pulsed laser irradiation. In this multi-step process, metal aggregation in nanometer-sized (nm) clusters is promoted with several degrees of freedom. Also, the formation of bimetallic alloy and core–shell nanostructures inside the soda-lime glass by the above technique along with their optical properties are discussed. Also, for the first time as a novel route for the synthesis of bimetallic nanoclusters, gold in various doses was directly implanted in a plain soda-lime glass as well as in a copper and silver ion-exchanged soda-lime glass, using the tandem accelerator anticipating the core–shell or alloy phase between the metal species. Furthermore, ion- implantation is a material surface modification process by which ions of a material are implanted into added solid material, causing a change in the surface physical and chemical properties of the materials. The energy of the ions, as well as the ion species and the composition of the target, determines the functions acquired and the depth of penetration of the ions in the solid.