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Automotive Power Semiconductor Devices
Published in Ali Emadi, Handbook of Automotive Power Electronics and Motor Drives, 2017
A power MOSFET is a three-terminal device where the gate (i.e., the control terminal) controls the main current flow between the two output terminals: the drain and source. The source terminal is usually common to the gate and drain terminals. Power MOSFET output characteristics, that is, the drain current iD as a function of drain-to-source voltage vDS with gate-to-source voltage VGS as a parameter, are shown in Figure 6.7. In power electronic applications, the MOSFET is used to switch back and forth between the cutoff region (off-state) and the Ohmic region (on-state). The MOSFET is in off-state when the gate-source voltage VGS is less than the threshold voltage VGS(th), which is typically a few volts. The device is an open circuit and must have sufficiently high breakdown voltage BVDSS to sustain the bus voltage applied to the circuit as well as voltage transients experienced in the harsh automotive environment. When the MOSFET is driven by a large VGS, it is driven into the Ohmic region and behaves like a resistor. The on-state resistance of the MOSFET, usually referred to as the RDS(on), is generally considered the most important device parameter for the MOSFET. RDS(on) basically determines the conduction power loss and the maximum current and power ratings of the MOSFET.
Power MOSFET
Published in Dorin O. Neacşu, Automotive Power Systems, 2020
The power MOSFET is used as a switch in a power distribution circuit, either as a stand-alone device or within a solid-state relay. A MOSFET based switch is controlled to connect a load to the battery. A solid-state relay consists on an optocoupler and a power MOSFET with gate driver and protection, all packaged within the same case, and it is intended to replace an electromagnetic relay. While more details about the circuit use of an electronic relay are provided within Chapter 11, this chapter focuses on the power semiconductor device called MOSFET.
Power semiconductors
Published in D.A. Bradley, Power Electronics, 2017
A power MOSFET is a voltage-operated device requiring only a small gate current in order to turn it on and to maintain it in the ON state which means it is particularly suited to applications requiring high switching rates. However, as the gate circuit presents a capacitive load, with the result that there may be a significant reactive current in the gate circuit, the gate current source must be properly matched to the gate, especially where high speed switching is required.
A New Transformerless Quadratic Boost Converter with High Voltage Gain
Published in Smart Science, 2020
Javed Ahmad, Mohammad Zaid, Adil Sarwar, Mohd Tariq, Zeeshan Sarwer
As shown in Figures 14 and 15 a hardware prototype is developed to verify the simulation results and the mathematical analysis of the proposed converter. A , MOSFET is used as power switch with equal to.07 Ω. Super-fast recovery diodes SPW52N50C3 of , are used in the prototype circuit. TLP250 is used as driver circuit for power MOSFET. STM32 Nucleo-64 development board with STM32F334R8 is used as microcontroller. The inductors, capacitors and load resistance are of same values as listed in Table 2. All the current measurements are done through TCP202 (, peak) current probe manufactured by Tektronix. TT-SI 9001 voltage differential probe manufactured by TESTEC is used for measurement of output voltage and voltage across capacitors. A , , of DC electronic load manufactured by Chroma (Model-63202) is employed to realize a resistive load. A 4 channel MDO3024 by Tektronix is used as an oscilloscope. Experimental set up built in laboratory is shown in Figure 16.
A novel fabrication of TDMOSFETs using two-step trench etching and twice self-alignment technique
Published in International Journal of Electronics Letters, 2019
Jongdae Kim, Jimin Oh, Sang-Gi Kim, Yilsuk Yang
One of the most suitable devices as power switches in the field of PMIC, DC to DC converter, and motor drive chip is a trench power MOSFET. The progress step and on-resistance reduction of trench power MOSFETs for cost-effectiveness and high efficiency (Guan et al., 2015; Luo et al., 2011; Oh et al., 2015; Orouji, Mahabadi, & Keshavarzi, 2011; Osawa et al., 1999; Sodhi, Malik, Asselais, & Kinzer, 1999) has been developed. The advanced process technologies for process step reduction and cell density increase of the devices have been published in several places (Kuribayashi, Hiruta, Shimizu, Sudoh, & Iwasaki, 2003; Narazaki et al., 2000; Ohi et al., 2015; Saremi, Ebrahimi, Afzali-Kusha, & Mohammadi, 2011; Sato, & Yonehara, 1994). Critical limitations to smaller cell sizes in existing technologies that use 5 to 6 mask steps to increase cell density and reduce on-resistance are due to process complexity. In existing technologies that use 5 to 6 mask steps to increase cell density and reduce on-resistance, critical limitations are due to process complexities.
A push-pulled capacitor-less FVF LDO with active feed-forward compensator
Published in International Journal of Electronics, 2021
where is the change in the voltage at the gate of the power MOSFET and . The initial and settling times of the LDO regulator can be minimised by increasing the slew rate. The dynamic current source of the proposed overshoot spike voltage detection circuit activates only during transients and boosts the current flow through the gate parasitic capacitance of the power MOSFET. This increases the slew rate and thereby minimises both and .