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Electric Motor Drives
Published in Iqbal Husain, Electric and Hybrid Vehicles, 2021
The PWM frequency is typically chosen an order of magnitude higher than the fundamental frequency to provide adequate bandwidth for good current regulation. For example, if the maximum speed of an eight-pole traction machine is 12,000 rpm, then the fundamental frequency is 800 Hz and an 8 kHz PWM frequency is adequate. With IGBT-based inverters, the PWM switching frequency is typically limited between 5 and 10 kHz to minimize the device switching losses and maintain a decent inverter efficiency. Controllers are designed to reduce the switching frequency for lower motor speeds and even go into a six-step switching mode where the switching frequency equals the fundamental frequency in order to reduce inverter losses. With SiC- and GaN-based inverters, it is possible to use high PWM switching frequency while maintaining high efficiency and the higher bandwidth available can be utilized for better current regulation improving the torque output performance of the traction motor.
DC Circuit Analysis, Diodes, and Transistors – BJT, MOSFET, and IGBT
Published in S. Bobby Rauf, Electrical Engineering Fundamentals, 2020
IGBT or Insulated Gate Bipolar Transistor: An IGBT is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. Figure 2.13 shows the cross-section, or construction, the symbol, and a picture of a typical IGBT. Note that physical shapes of transistors vary based on their ratings and types. An IGBT consists of four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure. IGBT transistors are used in switching power supplies in high-power applications: VFDs, electric cars, trains, variable speed refrigerators, lamp ballasts, and air-conditioners.
Applied Power Device Family: Power Modules and Intelligent Power Modules
Published in Gourab Majumdar, Ikunori Takata, Power Devices for Efficient Energy Conversion, 2018
Gourab Majumdar, Ikunori Takata
The IGBT was first proposed in 1982, promising performance as an ideal power semiconductor switch by combining the best features of bipolar transistors and power MOSFETs [55, 80]. Recently, the IGBT became the main power device in the field of power electronics. Compared to a bipolar transistor and a MOSFET, an IGBT, through its two decades of refinement, exhibits a superior performance even at high voltage and high current and requires very low driving power.
Design, development, and implementation of grid-connected solar photovoltaic power conversion system
Published in Energy Sources, Part A: Recovery, Utilization, and Environmental Effects, 2021
Nirav Patel, Nitin Gupta, B. Chitti Babu
Notably, the logical signals extracted from the blanking circuit are in the range of 0–5 V and hence cannot be directly applied to drive the IGBT switches. This is due to the fact that, the IGBT switch requires the gate pulse of +15 V between emitter and gate terminal. Therefore, a pulse amplification circuit is employed to amplify the pulse from +5 V to +15 Volts. The TLP250 based pulse amplification circuit depicted in Figure 9(a) offers dual features including pulse amplification, in addition to galvanic isolation between primary (low-level driver circuit) and secondary circuit (high power circuit) up to 2500 V. TLP250 is a Toshiba make eight pin DIP package IC. It can effectively work up to 25 kHz switching frequency. It should be pointed out that, a TLP250 requires a supply of +15 V and −5 V. In particular, to speed up the commutation process, a −5 V supply is given to the TLP250. The test result of an amplified pulse is shown in Figure 9(b).
Design and Implementation of Digital Phase Locked Loop for Single-Phase Grid-Tied PV Inverters
Published in Electric Power Components and Systems, 2018
The IGBT module is a small and low power loss intelligent module; it is integrated with gate driving circuits and freewheeling diodes. The rating of each IGBT device is 15A/600V. Two aluminum electrolytic capacitors, each rated 300 µF/450V, were connected in parallel. One resistor with 10 KΩ was used across the capacitors to provide a discharge path for the energy in the capacitors when the circuit is switched off. A 3 mH common coupled inductor was employed at the output side of the PV inverter. Two ultra-rapid 5 A fuze was used to protect the inverter circuit. Differential amplifier circuit was built for measuring the grid voltage. Line current was measured by a current sensor ACS712 based circuit. For evaluating the performance of the developed digital PLL, a serial 12-bit DAC AD7568 converter (each of the converters was configured in voltage mode and provides an analog output that is proportional to the applied digital value) was employed to output the signals that was unable to be measured directly, such as the voltage components Vd, Vq in the rotating d-q frame, the estimated grid voltage phase angle θ and cos(θ). The values are treated in the range from –1 to 0 and 0 to +1 and will be displayed as 0 V, 2.5 V, and 5 V on the oscilloscope for the values of 0 –1, 0, and +1, respectively. The utility voltage is 240 V/50 Hz. The role of the variable single-phase transformer is to obtain a variable ac supply voltage to the PV inverter so that experiment tests can be carried out under relatively low voltage condition for safety reason.
Lifetime prediction model for electric vehicle IGBT modules under driving conditions
Published in Journal of the Chinese Institute of Engineers, 2018
Ling-Ling Li, Peng-Chong Wang, Ching-Hsin Wang
The IGBT is a widely used power device, which consists of a metal oxide semiconductor field effect transistor (MOSFET) and bipolar transistor compound. Its input terminal is a MOSFET, and the output terminal is a PNP transistor. According to the composition, IGBT can be divided into horizontal and vertical categories. IGBT power module failure mode is divided into two categories: package failure and chip failure, in which package failure is the main failure mode. Overheating or heat-related problems are the main cause of IGBT package failure (Choi, Blaabjerg, and Lee 2015b). The typical structure of an IGBT module is multilayer. From top to bottom of the structure, the layers are, in order, IGBT chip, welding layer, copper layer, insulating ceramic layer, copper layer, welding layer, floor, and radiator. The special multilayer structure and the mismatch of thermal expansion coefficient between different materials cause fatigue and aging of the welding material under the influence of long-term thermal cycling, and eventually cause the device to fail due to chip lead break or temperature increase (Smet et al. 2011; Czerny et al. 2012; Pedersen et al. 2016; Tounsi et al. 2010; Yang, Agyakwa, and Johnson 2013). Therefore, it is necessary to establish the electrothermal model to evaluate the junction temperature of the power module and to predict the life expectancy with fatigue life theory.