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Power Electronic Converters
Published in Iqbal Husain, Electric and Hybrid Vehicles, 2021
The electrical properties of a power semiconductor device influence the switching and conduction characteristics which are vital for evaluating the losses and other performance attributes such as thermal limits, electromagnetic interference, and short-circuit capabilities. The maximum values of current, voltage, temperature, and power dissipation are related to the electrical properties and are recommended by the manufacturers for their product types. Few electrical properties and ratings critical to the choice of a device for an application are described in the following.
SiC MOSFETs robustness for diode-less applications
Published in EPE Journal, 2018
O. Avino-Salvado, C. Cheng, C. Buttay, H. Morel, D. Labrousse, S. Lefebvre, M. Ali
H. Morelwas born in Reims, France in 1959. He received the Engineer and PhD degrees from Ecole Centrale de Lyon in 1982 and 1984 respectively. In 1985, he joined the CNRS as Associated Scientist. He is currently a CNRS Senior Scientist at the INSA Lyon, Ampere Lab. From 2012 to 2014, he was a program o?cer at the ANR, the French research founding agency (Renewable generation and management of electricity). He published more than 90 articles in referred journals. His research area includes power semiconductor device characterization and modeling, CAE of Power Electronic System Integration, multi-physics modeling based on bond graphs. He is particularly involved in the design of power electronics based on Silicon Carbide for the More Electric Aircraft, and high voltage power electronics for the electric grids.
Distributed Wind Energy Conversion System Interface to the Grid Using Cascaded Multi-Level Converter
Published in IETE Journal of Research, 2018
Chandra Sekhar Nalamati, Paulson Samuel, Rajesh Gupta
Consider the single-phase line diagram of a conventional shunt compensated distribution system [6,8] as shown in Figure 2. It is desired that the shunt compensator supplies both the harmonic component and reactive component together with part of the real component of the load such that the source current is near sinusoidal at the fundamental frequency and in-phase with the grid terminal voltage. The load is supplied from the voltage source Vs through the feeder with impedance (Rs, Ls). The shunt compensator consists of H-bridge VSC. Each of the switches Sw1–Sw4 consists of a power semiconductor device (e.g. IGBT) and an anti-parallel diode. The voltage across the dc-link capacitor Cdc is denoted by Vdc and is connected across the H-bridge. The transformer used boosts up the low voltage of the wind generator system to the high voltage of the distribution grid. The currents flowing through the different branches are the source current is, the load current il, and the injected shunt current ish.
Breakdown Mechanisms of Power Semiconductor Devices
Published in IETE Technical Review, 2019
Haijun Guo, Baoxing Duan, Hao Wu, Yintang Yang
As representatives of power semiconductor technology, power semiconductor devices have seen rapid development during the past decades. To ensure power processing and transformation capability, the breakdown voltage (BV) is an important parameter. For a conventional Si-based power MOS device, optimizing the trade-off characteristics between the BV and specific on-resistance (Ron,sp) is a key to obtaining a low-power-consumption system. The termination technique is considered to be attractive in achieving high BV and is widely applied to power semiconductor devices. Traditional surface termination techniques include the field plate [1], the field limiting ring [2], and a variation of lateral doping [3]. In addition, Duan has proposed the substrate termination technique and reported numerous structures, including the step buried oxide Silicon On Insulator (SOI) [4], the buried oxide double-step SOI [5], the REduced BULk Field Lateral Double-diffused MOS (REBULF LDMOS) with the N+ floating layer [6], the Superjunction (SJ) LDMOS with the N+ floating layer [7], the step N-type compensation layer [8], and the buffered step doping [9], etc. The essence of the termination technique is to realize a shift of the breakdown point; that is, the breakdown point of the device shifts from the high-electric-field area to the low-electric-field area. The core of an Si-based power semiconductor device is a PN junction avalanche breakdown, such as a PIN diode, a LDMOS, and a Vertical Double-diffused MOS (VDMOS). Therefore, all techniques for enhancing the BV attempt to optimize the electric field distribution of the PN junction.