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Monolithic Device Models
Published in Wai-Kai Chen, Analog and VLSI Circuits, 2018
Bogdan M. Wilamowski, Guofu Niu, John Choma, Stephen I. Long, Nhat M. Nguyen, Martin A. Brooke
Note, that the Is parameter is the same for forward and reverse mode of operation. The Gummel-Poon transistor model [2] was derived from the Ebers-Moll model using the assumption that a12 = a21 = Is. For the Gummel–Poon model, Equations 1.3 are simplified to the form () IE=Is(1αFexpVBEVT−expVBCVT)IC=Is(expVBEVT−1αRexpVBCVT)
TCAD for SPICE Parameter Extraction
Published in Chinmay K. Maiti, Introducing Technology Computer-Aided Design (TCAD), 2017
For efficient circuit design, accurate transistor models are necessary. Historically the Ebers–Moll model is the first compact bipolar transistor model involving two back-to-back diodes. The evolution continued with the development of the GP, and more advanced models like VBIC, HICUM, and MEXTRAM. For accurate BJT modeling different extraction schemes have been proposed. Historically, the forward Early voltage has been extracted from the intercept with the VCE axis of the extrapolated plot in the output characteristics for constant base voltage, as shown in Fig. 12.5. In the following, a method is given of how the model parameters are extracted (obtained from slopes/intercepts of straight lines) and optimized (obtained from least squares fits of data to the full model using the extracted values as initial values). The optimization is presented step by step on data sets which are limited to regions where the considered parameters are prevalent.
Bipolar Junction Transistor
Published in Bogdan M. Wilamowski, J. David Irwin, Fundamentals of Industrial Electronics, 2018
Bogdan M. Wilamowski, Guofu Niu
Note that the Is parameter is the same for forward and reverse modes of operation. The Gummel–Poon transistor model [2] was derived from the Ebers–Moll model using the assumption that a12 = a21 = Is. For the Gummel–Poon model, Equations 9.3 are simplified to the form () IE=Is(1αFexpVBEVT−expVBCVT)IC=Is(expVBEVT−1αRexpVBCVT)
Gamma-Induced Degradation Effect of InP HBTs Studied by Keysight Model
Published in Nuclear Science and Engineering, 2021
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
The compact transistor models were developed to describe the characteristics of transistors in a compact way so that the model expressions could be embedded into circuit simulators. Conventional bipolar junction transistor compact models (for example, the Ebers-Moll and SPICE Gummel-Poon models) cannot model many characteristics of advanced III-V HBTs. Several improved compact models were presented to accurately predict HBT characteristics.24–26 Among the models, the VBIC model and the Keysight model were widely adopted in the design of the circuit. However, the Keysight model could describe the electrical behavior of InP HBTs more precisely than the VBIC model. Thus, the Keysight model is employed to study the effects of gamma irradiation on the InP/InGaAs HBT in this work.
A 1.2V 0.2mW 27MHz CMOS limiting amplifier using cross-coupled active load structure
Published in Australian Journal of Electrical and Electronics Engineering, 2020
M. Saddam Hossain Khan, Surajit Das Barman, Ahmed Wasif Reza
In this section, simulated results to observe the performance of the LiA are presented, and also how they deviate from the typical case due to process variations and mismatch are exhibited. Simulations are performed in a 130 nm CMOS technology using Cadence Spectre Simulator. Fast and slow transistor models are used in simulations for a certain range of temperature and compared with the simulated results from the typical transistor model to check the performance of the circuits. Monte Carlo simulations are used for testing the circuit under mismatch conditions. Afterwards, the effect of parasitic on the output behaviour for the designed layout of LiA are presented and compared.