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Python and Arduino with Pyfirmata
Published in Rajesh Singh, Anita Gehlot, Lovi Raj Gupta, Bhupendra Singh, Mahendra Swain, Internet of Things with Raspberry Pi and Arduino, 2019
Anita Gehlot, Rajesh Singh, Lovi Raj Gupta, Bhupendra Singh, Mahendra Swain
The LM35 series of temperature sensors has an output voltage linearly proportional to the Centigrade temperature. The LM35 device does not require any calibration or trimming to provide the accuracy of ±¼°C at room temperature and has a sensing range of −55°C to 150°C. The LM35 device draws a 60-µA current from the supply. The LM35 series devices are available in hermetic TO transistor packages, while the LM35C, LM35CA, and LM35D are available in the plastic TO-92 transistor packages. Figure 7.6 shows the circuit diagram of the LM35 interfacing. The output of LM35 is connected to the A0 pin of Arduino.
Gallium Nitride Transistors On Large-Diameter Si(111) Substrate
Published in Farid Medjdoub, Krzysztof Iniewski, Gallium Nitride (GaN), 2017
Subramaniam Arulkumaran, Geok Ing Ng
Nitride semiconductors are quickly transforming our world by enabling new solid-state lighting, highly efficient amplifiers for wireless communications, advanced power electronics with ultra low losses, and a large array of new high-performance devices. Today, the need for high-power and high-frequency transistors are still increasing steadily, commensurate with the huge demand for wireless telecommunications. Higher power, higher frequency bandwidths, better linearity, and improved efficiency are still driving the current development of radio frequency (RF) semiconductor devices (i.e., applications such as defense, wireless telecom, very small aperture terminal, and community antenna television). The market needs devices capable of handling all these specifications at an affordable price. Over the last few years, silicon laterally diffused metal oxide semiconductor coverage of high-power RF amplification applications in the frequency range of 2–6 GHz decreased from 92% to 76% with the remaining 24% market share covers by GaAs pseudomorphic high-electron-mobility transistor (HEMT) technology, HEMTs GaN, and Si bipolar junction transistor. Military applications were the first to use GaN devices and better performing devices continue to emerge with the support by Defense Advanced Research Projects Agency and Department of Defense funded research programs in the United States and European Space Agency in Europe. Apart from RF devices, very high demand also exists for high-power switching device applications such as compact adaptors for laptops, DC–AC and AC–DC invertors, efficient energy conversion from solar panels, hybrid cars and so on. Currently, silicon-based device technologies dominate the inverters market. However, such devices are very big in size and lossy during the conversion.
Investigation of tensile properties, hardness, and morphology of h-BN and MoS2 filler modified carbon fabric/epoxy composites
Published in Cogent Engineering, 2023
Yermal Shriraj Rao, Basavannadevaru Shivamurthy, Nanjangud Subbarao Mohan, Nagaraja Shetty, Sanjay Mavinkere Rangappa, Suchart Siengchin
The Rockwell hardness number (RHN) variation with filler concentrations is displayed in Figure 15. The addition of stiff h-BN and MoS2 in CFEC increased the RHN of the composites at all the tested filler concentrations. The RHN gradually increases with h-BN and MoS2 content up to 6 wt.% then starts a decreasing trend for further filler addition in the composite. The increased hardness of filler added composite indicates that filler contributes its hardness as well as stiffness to the matrix. In addition, good bonding between filler-loaded matrix and fibers is responsible for improved composite hardness (Li et al., 2013). The greatest RHN of 88 (23%↑) was attained for 6BN-CFEC, indicating larger resistance exhibited by the composite to indenter penetration because of improved laminate interface bonding and remarkable stiffness as well as the hardness of h-BN. Thus, it produces a smaller depth of impression. This finding is supported by the literature (Liu et al., 2016), which reported a 34% increase in the ball indentation hardness of 5 wt.% h-BN added PEEK. RHN of 6MoS2-CFEC improved from 72 (neat-CFEC) to 87. MoS2 inclusion in polystyrene improved Brinell hardness by 20% as it exhibits resistance to deformation (M. B. Khan et al., 2017). In another study, it was reported that 10 wt.% MoS2 addition to neat-epoxy and glass/epoxy improved Rockwell hardness by 3.9 (RHN 80) and 19.5% (RHN 92), respectively (Sudheer et al., 2013). In the present work, the hardness of CFEC added with 8 wt.% filler slightly decreased due to micro-voids and the possibility of agglomeration in the composite. The reduced Rockwell hardness was reported at increased boron nitride nanotube concentration loaded to polyurethane (Li et al., 2013). Furthermore, the hardness is location-dependent due to the random distribution of fillers in CFEC, composite anisotropy, and inhomogeneity.