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Memory Devices
Published in Chinmay K. Maiti, Introducing Technology Computer-Aided Design (TCAD), 2017
Another important area of concern for nanoscale SRAM is increased susceptibility to radiation-induced soft errors. Soft errors in the form of both single-event upsets (SEUs) and SRAM array multibit fails represent a reliability concern for the memory designer. The two primary sources of soft error–inducing radiation are terrestrial radiation and radioactive isotopes within materials used in the IC fabrication process. High-energy cosmic radiation interacting with the earth’s atmosphere results in a flux of neutron particles with a large range of energies extending to several 100 MeV. This process produces a charge cloud of electron–hole pairs that, when in close proximity to one or more sensitive neighboring circuit nodes, may result in a single- or multibit error.
Space Debris Mitigation Based on Commercial Off-the-Shelf Technologies
Published in M. Madi, O. Sokolova, Space Debris Peril: Pathways to Opportunities, 2020
The SEE is a probabilistic effect caused by radiated particles. It can lead to single-event upsets (SEUs), which cause bit inversion of logical devices and memories. The effect of an SEU is based on characteristics measured by a particle radiation test. If necessary, software-based countermeasures can be adopted, such as the installation of an error correction code, to protect against SEUs. Simple intermittent resetting of the central processing unit (CPU) is also a countermeasure against SEUs for simple applications. The SEE can also cause single-event latch-ups (SELs), which cause tentative overcurrent conditions. In general, an SEL can be addressed by a swift power reset of the relevant devices.
CRÈME96 and Related Error Rate Prediction Methods
Published in John D. Cressler, H. Alan Mantooth, Extreme Environment Electronics, 2017
Nondestructive SEEs are ones in which the functionality of the circuit can be recovered. They are Single event transient (SET): This is a radiation-induced current or voltage pulse occurring at a circuit node or the output of an IC. It is caused by a single particle and it may or may not result in an error.Single event upset (SEU): A SEU is a radiation-induced change in a circuit’s static logic state. It is one possible outcome of an SET in a specific sensitive circuit node.Single event functional interrupt (SEFI): A SEFI is typically seen as a large burst of errors due to a single ion strike that corrupts control or mode circuitry. It can be self-restoring or it may require reset, or restart.Single event latchup (SEL): A SEL occurs when the spurious current transient due to the ionization of a single particle activates one of a pair of parasitic transistors in a CMOS circuit. This pair forms a circuit that shorts the power supply for the device. If the current drawn by the device is externally limited at a sufficiently low value, the device will not be damaged; however, power to the device must be cycled to restore its functionality.Multi-cell upset (MCU): This occurs when a single ion upsets more than one memory cell.Multi-bit upset (MBU): This occurs where an MCU occurs in one word. There are also destructive SEEs: single event gate rupture (SEGR), single hard error (SHE), single event burnout (SEB), single event snapback (SES), and single event dielectric rupture (SEDR). Since this chapter is concerned with error rate prediction, destructive SEEs will not be addressed here. The most common nondestructive SEEs begin as SETs. The way SETs develop is described later.
Low-cost and high-performance visual guidance and navigation system for space debris removal
Published in Advanced Robotics, 2021
Shinichi Kimura, Eijiro Atarashi, Taro Kashiwayanagi, Kohei Fujimoto, Ryan Proffitt
SEE is a probabilistic effect due to the radiated particles. This can lead to single-event upsets (SEUs), causing a bit inversion of logical devices and memories. The effect of SEU relies on the characteristics measured by a particle radiation test. If necessary, software-based countermeasures, such as the installation of an error correction code, can be adopted to protect against SEUs. SEE might cause single-event latch-ups (SELs), which cause tentative overcurrent conditions. In general, an SEL can be addressed using a swift power reset of the relevant devices.