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Design and Analysis of Charge Plasma-Based SiGe Vertical TFET for Biosensing Applications
Published in Balwinder Raj, Brij B. Gupta, Jeetendra Singh, Advanced Circuits and Systems for Healthcare and Security Applications, 2023
Shailendra Singh, Sanjeev Kumar Bhalla, Jeetendra Singh, Shilpi Gupta, Balwinder Raj, N.K. Yadav
TFET-based biosensors have been utilized to regulate using the advantages of both dielectric and non-dielectric materials, leading to the invention of DM TFET biosensors. Tunnel FETs based on charge plasma are created by using a source/drain electrode and selecting the appropriate metalworking function to build a p + source. In the intrinsic silicon body, the total definition is n+ drain area (ni = 1016 cubic meters). Because there are no abrupt connections between the source/channel and drain regions, there is no random dopant fluctuation, reducing overall cost. As a result, the maker does not need to use a high-temperature diffusion and ion implantation technique. For all intents and purposes, part of reducing the manufacturing process of charge plasma over the conventional TFET will eventually come to a close.
Fundamentals of Small-Delay Defect Testing
Published in K. Goel Sandeep, Chakrabarty Krishnendu, Testing for Small-Delay Defects in Nanoscale CMOS Integrated Circuits, 2017
M. Reddy Sudhakar, Maxwell Peter
Although many parametric defects are systematic, a significant number are, in fact, random. One example has already been given, namely, random dopant fluctuation. Others are line-edge and line-width roughness, gate dielectric, oxide thickness, and fixed charge. Ultimately, all these are due to physical causes, but the effects on the circuit are parametric variation. These parametric variations in turn can give rise to circuit fails. Table 1.1 [Segura 2002] shows a number of varied effects from different physical mechanisms. Notable is that the vast majority have an impact on delay. Although some of these will not result in circuit failure, many will, meaning a solid delay test strategy is imperative.
Gate and Channel Engineered Nanoscale Electronic Devices
Published in Khurshed Ahmad Shah, Farooq Ahmad Khanday, Nanoscale Electronic Devices and Their Applications, 2020
Khurshed Ahmad Shah, Farooq Ahmad Khanday
The channel formation in a MOSFET takes place in few micrometers below the oxide. The thickness of substrate is kept much greater than that to ensure the structural feasibility of the device. However, this unused substrate adds several parasitics and contributes to leakage currents directly from source and drain regions [25]. In addition, the unused substrate reduces the mobility of the charge carriers. These effects aggravate especially with higher body doping and small dimensions. To maintain the structural feasibility and eliminate these effects, an insulating layer is added within the body of substrate as shown in Figure 5.2. Such a technique is called silicon-on-insulator (SOI) technology. Depending upon whether the depletion region of the channel consumes the silicon depth between the oxides partially or fully, the SOI MOSFETs are categorized as partially depleted SOI (PD-SOI) MOSFETs and fully depleted SOI (FD-SOI) MOSFETs. The buried oxide (BOx) layer within the substrate offers low parasitics, removes the leakage paths, and enables the high speed of operation. Besides, SOI platform offers enhanced channel mobility, avoids device latch-up, reduces random dopant fluctuation, and decreases variability in threshold voltage [26,27]. However, the main problem in SOI is the self-heating and therefore prone to heat accumulation as the thermal conductivity of SiO2 is about two orders of magnitude less than silicon [28]. Replacing SiO2 with air (silicon-on-nothing (SON)) has been proposed as an alternate solution for advanced scalability due to better heat dissipation and good control of the fringing fields [29,30].
Radiation study of TFET and JLFET-based devices and circuits: a comprehensive review on the device structure and sensitivity
Published in Radiation Effects and Defects in Solids, 2023
Recently, Junctionless Tunnel Field Effect Transistor (JLTFET) has shown tremendous potential importance in terms of high ION and low SS since it amalgamates the advantages of both JLFET and TFET (72). JLTFET is a heavily doped Junctionless transistor with the concept of tunneling. The device is made to ON and OFF with the reduction of barrier between the source and the channel with an improved SS of 24 mv/dec. The presence of ITC causes variation in flat band voltage, tunneling barrier, and transfer characteristics of JLTFET in all regions of operation (73). Silicon-on-nothing electrostatically doped JLTFET (SON-ED-JLTFET) is immune to SCE and doesn’t show mobility degradation, higher fabrication thermal budget, and random dopant fluctuation (74). The hetero material combination of JLTFET finds application in high-speed switching devices. It incorporates the concept of charge plasma and tunable band gap at the source and channel interface making the device superior to conventional JLTFET in terms of ION, IOFF, threshold voltage (Vth), SS, and unity gain cut-off frequency (75).
10T FinFET based SRAM cell with improved stability for low power applications
Published in International Journal of Electronics, 2022
In the nanometre region, transistor threshold voltage increases continuously because of the random dopant fluctuation. So, it becomes impossible to predict the nature of devices that are very close to each other on a single chip and fulfill the basic needs of memory cells in a modern digital system. Further reduction in supply and threshold voltages makes it tough to design a stable cell. Here we design 10 T SRAM cells in both SG and IG FinFET modes. Both modes can solve the issues that arise in CMOS technology at the lower node. Section II discusses the short intro of device structures. Existing cells are examined in Section III. Sections IV introduce the proposed cells. Comparative analysis between all the cells is carried out in Sections V. Finally, Section VI concludes the results.
MOSFET threshold voltage modelling and parameters optimisation of new ion implant-based subthreshold device
Published in International Journal of Electronics Letters, 2021
Munem Hossain, Masud H. Chowdhury
Based on the 3-D plot of Figure 4, the optimum value of Ion can be found for a specific set of peak doping density and values. The subthreshold device shows higher ON current compared to the super-threshold device. Figure 5 shows the variation of the off current with the variation of peak doping density. In Figure 5, off current is little higher for the subthreshold device compared to that of the super-threshold device. Since the off current is very low for both the cases, this will not affect the subthreshold circuit operation that much. Random dopant fluctuation is another important factor for device performance, which depends on the vertical and horizontal electric field of the channel. Since the gate voltage and biasing voltage is very small, the impact of both electric fields will not be strong enough to cause random dopant fluctuation in the channel area.