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Generation, Removal, and Passivation of Plasma Process Induced Defects
Published in Kazumi Wada, Stella W. Pang, Defects in Optoelectronic Materials, 2021
In plasma etching, energetic particles in the discharge can cause damage in devices [1–10]. These high energy particles, which include ions, electrons, and photons, can introduce radiation damage in materials. Often, defects induced by dry etching penetrate deeply into the devices, way beyond the typical ion penetration range [11, 12]. In addition, contamination from materials coming off the plasma system or etch mask, deposition from the reactive species in the discharge, or stoichiometry changes due to preferential etching or layer intermixing in the compound semiconductors can also result in device degradation [13–16]. Therefore, it is important to understand the mechanisms for plasma process induced damage and to develop plasma etching conditions with minimal or no surface damage. However, there are multiple requirements that need to be satisfied for dry etching electronic or optoelectronic devices. These include controllable etch rate, selectivity, profile, surface morphology, uniformity, reproducibility, etch stop, and low damage. In order to meet most of these needs, some surface defects could be generated by dry etching. Therefore, sensitive techniques to analyze these surface defects are important to identify their origins and their influence to device performance. In addition, surface passivation and damage removal techniques are also critical to restore the device performance after plasma processing.
Force-System Resultants and Equilibrium
Published in Richard C. Dorf, The Engineering Handbook, 2018
Radiation damage occurs due to the deposition of energy in materials, which leads to ionization and atomic displacement damage. The damage to biological systems is a function of the type of radiation and is due to the production of oxidizing radicals following radiation’s ionizing effect. Each source of radiation is characterized by its relative biological effectiveness (RBE), which is the damage of a given amount of the particular radiation relative to the damage of the same energy deposited by 100keVx- rays. The unit of absorbed dose is the gray, where 1 gray (Gy)=1J (absorbed energy)/kg (mass of material). The unit of radiation exposure is the sievert (Sv), where Dose (Sv)= Absorbed dose (Gy)×RBE
Semiconductor Sensors for Direct X-Ray Conversion
Published in Yallup Kevin, Basiricò Laura, Iniewski Kris, Sensors for Diagnostics and Monitoring, 2018
Maximum photon energy is in practice related to the maximum thickness of the sensor. If the sensor is not thick enough, a significant portion of the incoming radiation will escape the sensor material. This has severe undesired consequences. Firstly, sensor efficiency suffers, requiring a long exposure time in order to collect a sufficient number of photons to ensure good signal-to-noise ratio (SNR) and CNR values. Second, escaping radiation will cause radiation damage in the underlying electronics. The degree of the radiation damage depends on the radiation hardness of the electronics, but it will lead to high implementation costs (if radiation-hard technologies are used) and/or high servicing costs (if frequent replacement costs have to be accepted).
Effect of gamma and beta radiation on I–V characterization of the solar cell panel
Published in Radiation Effects and Defects in Solids, 2018
Ban Mazin Al-Shabander, Nesreen B. Naji, Iftikhar M. Ali
Two types of radiation damage effects occur in solid-state electronic products: displacement damage and ionization effects. Displacement damage is the movement of atoms from their normal position in the lattice to another placement, causing a defect in the lattice material. Ionization effect is the generation of electron–hole pairs within the material that causes radiation effects (11).