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CMOS Manufacturability
Published in Krzysztof Iniewski, Circuits at the Nanoscale, 2018
Lithography is the key to the shrink path. For several recent technology generations, the imaging wavelength used to print features on silicon has been larger than the linewidth of these features. This difference, known as the subwavelength gap [9], requires aggressive development of patterning techniques. Next-generation lithography solutions competing for manufacturing viability are the dual-patterning technology (DPT), the extreme ultraviolet (EUV), and the nano-imprint lithography (NIL) (Table 2.1). Their success is still far from predictable. Inverse lithography, a technique that practically negates OPC, seems to be also making progress [10]. The key manufacturing task is to optimize the resolution by controlling the (dimensionless) lithography resolution factor k1 defined by the guidelines for a diffraction-limited projector according to the Raleigh scaling equation [11]: () R=k1λ/NA
Fundamentals of Microfabrication and MEMS Fabrication Technologies
Published in Sergey Edward Lyshevski, Nano- and Micro-Electromechanical Systems, 2018
Lithography is the process used in ICs and MEMS fabrication to create the patterns defining the ICs’, microstructures’, and microdevices’ features. Different lithography processes are photolithography (as was reported), screen printing, electron-beam lithography, x-ray lithography (high-aspect-ratio technology), etc. Extensions of the currently widely used optical lithography using shorter-wavelength radiation result in the 100-nm minimum feature size. For microstructures and ICs that require less than 100-nm resolution features, the next-generation lithography techniques must be applied. For example, photons and charged particles, which have short wavelengths, can be used. In particular, high-throughput electron-beam lithography is under development. Unlike optical lithography, electron beams are not diffraction-limited, and thus, the ultimate resolution attainable is expanded. Electron-beam lithography has evolved from the early scanning-electron-microscope-type Gaussian beam systems (which expose ICs patterns one pixel at a time) to the massive parallel projection of pixels in electron-projection lithography. This allows one to attain millions of pixels per shot. Figure 4.2 documents a scanning-electron-beam lithography system (IBM VS-2A). The digital pattern generator is based on commercial high-performance RISC processors. The system is capable of creating large area patterns. The system is computerized, and the hardware-software codesign should be accomplished (computer-aided-design and control software must be integrated within the lithography systems).
Plasma Etch
Published in Robert Doering, Yoshio Nishi, Handbook of Semiconductor Manufacturing Technology, 2017
Peter L. G. Ventzek, Shahid Rauf, Terry Sparks
Even though the transistor technology is discussed in other chapters of the handbook, it is probably worth a short review of some critical issues that may effect etch process development. Another approach to the device performance and critical scaling requirements is the introduction of novel device structures. These structures may compensate for material and process limitations such as patterning while meeting the device requirements. Novel transistor structures may likely dominate the scaling challenge due to cost and timing of the next generation lithography. As with alternative masking schemes, alternative device structures may provide a more timely and lower risk approach to meeting the device performance scaling challenges compared to the introduction of new materials into the classical planar MOSFET. These structures such as the FinFET transistor can be fabricated with existing materials—silicon and oxynitride dielectrics. Refractory metals and metal oxide dielectrics are more difficult to process, are expensive and pose cross-contamination risks.
High buffering capability of silicon-polymer photonic-crystal coupled cavity waveguide
Published in Waves in Random and Complex Media, 2023
Israa Abood, Sayed Elshahat, Zhengbiao Ouyang
Among the accessible materials for photonic applications, such as InP, GaAs, silicon-on-insulator (SOI) and polymers, the polymers [29,30] have got great attention due to their low-temperature fabrication, good mass production possibilities with low processing cost, easy fictionalizations, and the possibility of tuning their optical properties. It is well known that the electro-optic effect has an ultra-high response speed of the order of nanosecond [31]. Compared to semiconductor materials such as InP, GaAs, and SOI, the low refractive index contract-based polymer photonic crystal waveguide can allow larger optical mode volume and facilitate the coupling to the standard single-mode optical fibers [32]. The difficulties lie in the fabrication of patterns with a high aspect ratio in the polymer film because the choice of etch masks applicable to polymeric materials is very limited. As a means for overcoming this, the nanoimprint lithography (NIL) can be we employed to emboss stamps with high aspect ratio lines and rod arrays into thin polymer films directly and to transfer these patterns into several materials [33], while NIL is regarded as an emerging technique for next-generation lithography because of their producibility of nano-scale features with a cost-effective and high output [34]. Therefore, the embossing of a triangular array of rods into polymer film through the nanoimprint process could be suitable for the fabrication of polymeric photonic crystal structures [35]. Actually, it is reported that the nanoimprinted polymer photonic crystal slabs will be attractive candidates for the implementation of ultra-compact low-cost photonic crystal integrated circuits [36]. For the proposed structure, we first need to prepare a template, then use the template and NIL to obtain a triangle array of silicon rods, and finally heat and soften the polymer and set the silicon rod array in the polymer substrate, which is a second time of NIL fabrication.