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Lithography
Published in Kumar Shubham, Ankaj Gupta, Integrated Circuit Fabrication, 2021
Electron beam lithography offers better resolution because of the small wavelength of electrons (<0.01 nm for 10–50 keV electrons). The resolution of an electron lithographic system is limited electron scattering in the resist (Figure 4.18) and by the various aberrations of the electron optics not by diffraction. The main advantages of electron beam lithography are listed as: Generation up to nano and submicron resist geometriesPrecisely controlled and highly automated operationSuperior depth of focusDirect writing i.e. patterning without a mask
Fabrication Tools
Published in Vinod Kumar Khanna, Introductory Nanoelectronics, 2020
The operating principle of an electron-beam lithography system is strikingly similar to that of a scanning electron microscope. So, the resolution achievable with electron-beam lithography is the same as that possible in a scanning electron microscope, namely 0.06–0.15 nm according to the energy of electron beam. But this theoretical limit is hardly attained in practice because electron optics is not the solo deciding factor. Interaction of electrons with the resist by scattering and secondary processes plays a vital role so that in practice, the resolution is a few nanometers. Therefore, electron-beam lithography is used for creating nanostructures with sub-10 nm resolution as structures in this size range cannot be made with optical lithography. Resolution possible with optical lithography is inferior by an order of magnitude to that by electron-beam lithography.
Organic Lasers with Distributed Feedback: Threshold Minimization and LED Pumping
Published in Marco Anni, Sandro Lattante, Organic Lasers, 2018
Guy L. Whitworth, Graham A. Turnbull
Electron beam lithography is a precise, fine, and complicated technique used to create nanostructures. The principle lies in focusing an electron beam down to a tight spot onto an electron-sensitive material known as a resist. The beam is then scanned across the film to create the desired pattern (e.g., a diffraction grating). The film is washed with a solvent to remove the unwanted areas of resist to form a topological profile, and the pattern can then be etched into the underlying substrate. This process allows for the creation of fine structures with resolutions down to ∼ $ \sim $ 20 nm, often etched into silicon or fused silica. E-beam lithography can be used to write arbitrary shapes with very high resolution and so is very versatile when compared with holography, which, we will see later, is somewhat limited in scope. However, e-beam lithography is an expensive and slow method, making it undesirable for use over large areas and in industrial production of photonic structures. As such e-beam is commonly used to create a master structure to be used in additional replication processes. There are various methods in which the master structure can be quickly and inexpensively replicated, which opens the door to high-throughput fabrication of DFB gratings for organic lasers.
State of the Art of Nanoantenna Designs in Infrared and Visible Regions: An Application-Oriented Review
Published in IETE Technical Review, 2022
Priya Ranjan Meher, Abhiram Reddy Cholleti, Sanjeev Kumar Mishra
Electron beam lithography uses electrons to print patterns. First, it starts with a substrate like silicon, where we apply the pattern and then an EBL resist is coated on the substrate. After this, the substrate is loaded into the EBL instrument. Now, the electron source which is a part of the instrument emits electrons and then the lens system presented in it focuses the beam. At last, the deflectors control the beam onto the substrate according to the design. In the next step, the substrate will be submerged into a developer (chemical bath) to dissolve the resist material that was exposed to the electron beam. Figure 9(b) represents the schematic diagram of EBL.