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The Exploitation of the Spin-Transfer Torque Effect for CMOS Compatible Beyond Von Neumann Computing
Published in Krzysztof Iniewski, Santosh K. Kurinec, Sumeet Walia, Energy Efficient Computing & Electronics, 2019
Thomas Windbacher, Alexander Makarov, Siegfried Selberherr, Hiwa Mahmoudi, B. Gunnar Malm, Mattias Ekström, Mikael Östling
Currently, there are two speed-gaps in the hierarchy: Between the cache and the primary memory and between the primary memory and the secondary memory [90,91]. For the gap between the primary memory and the high volume secondary memory, a new hierarchy level—the storage class memory (SCM)—has been proposed. To fill the gap the employed memory must exhibit, a density higher than DRAM, an access time shorter than NAND-Flash, and nonvolatility. Right now there is a competition between several nonvolatile random access memory (NVRAM) types that have potential for SCM applications, such as phase change memory, conductive bridge memory, resistive memory, and MRAM.
Designing the Switch/Router
Published in James Aweya, Designing Switch/Routers, 2023
An NVRAM is a type of RAM whose contents are not lost when the system is powered down or reloaded. Typically, electronic devices use NVRAMs to store certain systems settings and information about local components and devices so that they can be accessed quickly when the system powers up or reloads. Unlike a static RAM (SRAM) and a dynamic RAM (DRAM) which both maintain data only for as long as the system power is applied, the information in an NVRAM is retained from one use to the next even if the system is powered off.
Programmable-logic controllers and operation
Published in Raymond F. Gardner, Introduction to Plant Automation and Controls, 2020
This is a category of RAM that stores and retains data when power is lost. NVRAM in its simplest form may consist of battery-backup conventional static RAM, and its retention time is limited only by battery life. Other NVRAM options use flash memory to provide nearly indefinite retention times. Some PLCs store their operating programs in the PROM chips and other PLCs use NVRAM chips.
Structural properties of Fe–Ni/Cu/Fe–Ni trilayers on Si(100)
Published in Phase Transitions, 2021
Ananya Sahoo, Maheswari Mohanta, S. K. Parida, V. R. R. Medicherla
Ferromagnetic (FM) multilayers are considered as important materials by physicists and engineers in the recent past due to the novel and exciting physical properties such as giant magnetoresistance (GMR) [1–4], tunneling magnetoresistance (TMR) [5], magnetic anisotropy [6], surface plasmon resonance and giant magneto-reflectivity (GMRE) [7, 8] they exhibit. The fundamental physics of the novel magnetoresistive phenomena in magnetic multilayers is still elusive [9, 10]. The magnetic multilayers can be used in panoply of technological applications. The best application of them is in the fabrication of devices that utilize the spin of the electron [11]. One such device called the spin valve can be used as read head for computer hard disks. The spin valves can also be used in non-volatile random access memory structures. The emergence of magnetoelectronics can bring a sea change in the electronics industry. The magnetic multilayers play a key role in improving the data storage density. A recent review by Rizal et al. [12] describes in detail the fabrication and characterization of the magnetic multilayers consisting of alternate stacks of FM and nonmagnetic (NM) layers. The observed GMR in magnetic multilayers was attributed to spin- dependent scattering at the interface [1, 9]. The spin-dependent scattering at the bulk of the FM layer was also included to obtain GMR along with interfacial scattering [13, 14].
Synthesis and modification of ZnO thin films by energetic ion beams
Published in Radiation Effects and Defects in Solids, 2021
Richa Krishna, Dinesh Chandra Agarwal, Devesh Kumar Avasthi
RRAM has many advantages, such as low-power dissipation, high-speed operation and simple device structure, which make it more suitable for applications in comparison to other non-volatile random access memory. An insulating film or wide ban gap semiconducting layer sandwiched between two metal contacts constitutes a RRAM device.