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Physical Vapor Deposition and Its Application in Vanadium Dioxide Synthesis
Published in Yi Long, Yanfeng Gao, Vanadium Dioxide-Based Thermochromic Smart Windows, 2021
Tuan Duc Vu, Ping Jin, Zhang Chen, Yanfeng Gao, Yi Long
Besides the advantages in preparing extremely thin films, MBE also shows advantages in the preparation of large-sized thin films, accurate stoichiometry, and especially low-temperature deposition (350°C [87]). Low-temperature deposition for VO2 means a reduced lattice mismatch due to the thermal expansion and diffusion of substrate elements and higher crystal quality, which can be used in basic theory research [89, 90] and in the development of precision components [91, 92]. It could also enable the application of VO2 in electronic devices, such as in uncooled infrared focal plane arrays. However, MBE requires a crystallized substrate with very little lattice mismatch with the deposition materials and expensive equipment, which limit its wide usage.
Epitaxy
Published in Kumar Shubham, Ankaj Gupta, Integrated Circuit Fabrication, 2021
Molecular Beam Epitaxial growth technique has a number of advantages over other techniques. A particular advantage is that it permits growth of crystalline layers at temperatures where solid-state diffusion is negligible. Since chemical decomposition is not required for growth, deposition species need require only enough energy to migrate along the substrate surface to crystalline bonding site. The impurity dopant incorporation during molecular beam epitaxial growth is possible by having an additional source of the dopant. As a result, MBE has rapidly established itself as a versatile technique for growing elemental and compound semiconductor films. Thus using MBE, it is possible to produce multilayered structures including superlattices with layer thickness as low as 10 Å for DH lasers and waveguide applications.
Synthesis of Perovskite Oxides
Published in Gibin George, Sivasankara Rao Ede, Zhiping Luo, Fundamentals of Perovskite Oxides, 2020
Gibin George, Sivasankara Rao Ede, Zhiping Luo
The major advantage of MBE is the fabrication of thin films with a few unit cell thickness. Like other thin film deposition techniques, MBE requires a substrate, and thus the obtained films are with a heterostructure. However, MBE is used for depositing on any substrate, which can withstand high temperatures. MBE is used for the deposition of either a functional electrode on conductive substrates or a conductive layer on functional electrodes. The deposition of electroactive SrIrO3 (100) films on DyScO3 (110) (Tang et al. 2016) is an example for the former, and the deposition of conducting SrVO3 on (LaAlO3)0.3(Sr2AlTa6)0.7 (Moyer et al. 2013) is an example for the latter.
A critical overview of thin films coating technologies for energy applications
Published in Cogent Engineering, 2023
Mohammad Istiaque Hossain, Said Mansour
The article has been arranged in a way to provide an in-depth knowledge to the wide range of readers where both theoretical and basic mechanism of PVD methods are considered. Such techniques are the best due to the technological adaptability to fabricate inorganic, hybrid, and nanocomposite thin films. MBE is a significant deposition technique to grow epitaxial, layered structures under ultrahigh vacuum conditions on different substrate materials (Kim et al., 2022; Richards et al., 2022; Yao et al., 2022; Zhao et al., 2022; Zhu et al., 2022). In general, chemical reaction occurs through molecular beam impinging on the surface, where this chemical reaction is the material transition from the gas phase in the molecular beam to the solid state on top of the substrate. MBE tool allows higher qualities of the deposited films through heating and rotation capabilities. In-situ reflection high energy electron diffraction (RHEED) can be used to check the quality of the deposited films, which is an added advantage. In this tool, growth process involves controlling molecular and/or atomic beams via shutters and source temperature, deposited on mono-crystal substrate for epitaxial growth.