China
Africa
Explore chapters and articles related to this topic
Synthesis of Graphene from Vegetable Waste
Published in Amir Al-Ahmed, Inamuddin, Graphene from Natural Sources, 2023
R. Imran Jafri, Adona Vallattu Soman, Athul Satya, Sourav Melethethil Surendran, Akshaya S. Nair
The most lauded method among the synthesis of graphene is the epitaxial method. Epitaxial growth is the process of depositing a single crystalline layer on a single crystalline substrate to generate an epitaxial film. It produces high-crystalline graphene on single-crystalline substrates. Based on the substrate, there are two types of epitaxial methods, heteroepitaxial method, and homoepitaxial method. When a film is deposited on a substrate of the similar type, it is defined as a homoepitaxial layer; if the film and substrate are made of dissimilar components, it is defined as a heteroepitaxial layer. Epitaxial graphene growth has been illustrated as a much more suitable strategy for the processing and wide scale making of graphene for electronic applications (Bhuyan et al. 2016).
Epitaxy
Published in Kumar Shubham, Ankaj Gupta, Integrated Circuit Fabrication, 2021
The second half of the chapter presented growth techniques that have been developed for controllably producing thin epitaxial layers. Several epitaxial techniques have been used for the growth of epilayers, the prominent among these techniques are Liquid Phase Epitaxy (LPE), Vapor Phase Epitaxy (VPE), and Molecular Beam Epitaxy (MBE), have discussed. The common techniques for thin epitaxial growth are Chemical Vapor Deposition (CVD) and Molecular Beam Epitaxy (MBE) where CVD is chemical deposition process and MBE is physical deposition process. In CVD gases and dopants are transported in vapor form to the substrate, where a chemical reaction occurs that results in the deposition of the epitaxial layer. MBE is done by the evaporation of a species in an ultrahigh-vacuum system. It is a low-temperature process so it has low growth rate. MBE can grow single-crystal, multilayer structures with dimensions on the order of atomic layers.
Introduction
Published in Sharon Ann Holgate, Understanding Solid State Physics, 2021
In order to make new types of devices, new manufacturing methods have to be developed. Epitaxial growth techniques, which allow electronic components to be built up layer by layer, have made a huge impact by helping make the continued development of smaller electronic components possible. Meanwhile, new ways of growing crystals, and of making other materials such as composites and polymers, have enabled a range of modern materials to replace more traditional choices in many applications. For example, plastic bottles are now more widely used than glass for soft drinks, although concerns about the current level of plastic pollution could see a reverse in this trend. There have also been improvements in manufacturing more traditional materials. In fact, it was the ability to produce high-quality glass that made optical fibres a practical proposition for the telecommunications industry.
Tuning diamond electronic properties for functional device applications
Published in Functional Diamond, 2022
Anliang Lu, Limin Yang, Chaoqun Dang, Heyi Wang, Yang Zhang, Xiaocui Li, Hongti Zhang, Yang Lu
Lastly, although diamond has a lot of potentials as a promising electronic material, there are many challenges to be addressed. For the growth of large-size (up to wafer scale) and high-quality diamond, the challenges include improving crystal quality (single crystallinity), reducing the surface roughness and internal flaws, increasing the growth rate without compromising the size and quality, and developing uniform epitaxial growth techniques for strain engineering and device integration. For the development of diamond planar processing technology for strain-engineered devices, some difficulties include the control of crystal orientation, precise geometric shape, and surface morphology and topography. While for the realization of efficient n-type doping of diamond with high electrical conductivity is another challenge for diamond’s microelectronics application. As these problems are gradually going to be addressed with the rapid development in this field, we will witness the rising of functional diamond applications in the near future.
Heusler alloys for spintronic devices: review on recent development and future perspectives
Published in Science and Technology of Advanced Materials, 2021
Kelvin Elphick, William Frost, Marjan Samiepour, Takahide Kubota, Koki Takanashi, Hiroaki Sukegawa, Seiji Mitani, Atsufumi Hirohata
Epitaxially grown Ru2MnGe films have a very small lattice mismatch of 0.5% on a MgO(001) substrate with the relationship, Ru2MnGe[100](001)||MgO[110](001) (aRu2MnGe = 0.5985 nm, cRu2MnGe = 0.6041 nm and aMgO = 0.5957 nm). At a substrate temperature Tsub > 673 K, the formation of epitaxial films has been reported [328] with the optimum growth temperature to be Tsub = 773 K for the L21 phase formation. For an epitaxial Ru2MnGe/Fe bilayer. The mean blocking temperature <TB> is measured to be 126 K using the York protocol [348].
A critical overview of thin films coating technologies for energy applications
Published in Cogent Engineering, 2023
Mohammad Istiaque Hossain, Said Mansour
Figure 12 shows the schematic of a MBE tool. In general, MBE can handle > 8” dia. substrates. One chamber has oxygen plasma as well as e-beam evaporation capability and is used for reactive deposition of oxides. The second chamber is dedicated for semiconductor compounds. In-situ RHEED can be used to check the quality of the deposited films, which is an added advantage. In this tool, growth process involves controlling molecular and/or atomic beams via shutters and source temperature, directed at a single crystal sample (suitably heated) to achieve epitaxial growth.