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Introduction to Ion Beam Analysis
Published in Yoshiaki Kato, Zenpachi Ogumi, José Manuel Perlado Martín, Lithium-Ion Batteries, 2019
Tomihiro Kamiya, Takahiro Satoh, Akiyoshi Yamazaki
Another major application of the MeV-energy ion microbeams is ion beam lithography to fabricate micro-/nanostructures with a high aspect ratio. Frank Watt at Singapore National University has established this proton beam writing technology using proton beams of a few MeVs with a spatial resolution that is better than 100 nm [68]. Other groups have also started to develop this technique in the last couple of decades [69, 70]. While a 2–3 MeV proton beam is suitable to expose photoresists, in a way similar to ultraviolet or electron beams, other ion beams with different species and energies can also be a source of exposure, since they can introduce sufficient energy deposition in the material. For example, a single particle with high linear energy transfer introduces enough energy deposition to decompose polymers along the ion track to create an etch pit. A so-called etch-pit membrane of a polymer such as CR-39 can be produced in this way [71]. This method is used for the evaluation of the position accuracy of a single ion hitting at the microbeam system [72]. Another application is radiation-induced cross linking of polymers, creating nanowires after development. The group of Seki at Osaka University has developed a single-particle nanofabrication technique and successfully demonstrated nanowire fabrication from polymers, including proteins, using the AVF cyclotron at TIARA [73, 74].
Nanoscience and Nanotechnology
Published in V. Chelladurai, Digvir S. Jayas, Nanoscience and Nanotechnology in Foods and Beverages, 2018
V. Chelladurai, Digvir S. Jayas
E-beam lithography is a scanning lithographic process that uses highly focused electron beams on the pre-selected resist film to scathe the unnecessary material in a pattern required to obtain a desired final product. E-beam lithography facilitates to produce better resolution than photolithography. However, it is limited due to electron scattering on the resist film. This can be minimized by using heavy mass particles compared to electrons, such as H+ and He++. The process of using the ions instead of E-beam for fabricating nanomaterials is known as ion-beam lithography. Both the E-beam and the ion-beam lithography are serial processes, thus making these slow, but these can be employed where better resolution is needed over the temporal (Filipponi and Sutherland 2010).
Lab-on-Antennas: Plasmonic Antennas for Single-Molecule Spectroscopy
Published in Zhaowei Liu, Plasmonics and Super-Resolution Imaging, 2017
The lab-on-antenna approach is feasible right now because the progress in nanotechnology allows fabrication of devices with single-nanometer precision that is critical to determine the strength of the antennas. Top-down methods, including electron beam and focused ion beam lithography, can achieve ∼10 nm resolution. Bottom-up approaches, including self-assembly and template-assisted self-assembly, could achieve resolution down to the molecule level. In addition, new hybrid approaches that combine both the top-down and bottom-up fabrications have been developed to fabricate devices with nanoscale (1–100 nm) resolutions on a large scale for high-throughput applications.
Chiral nematic liquid crystal organization of natural polymer nanocrystals
Published in Liquid Crystals, 2023
Daria Bukharina, Rui Xiong, Minkyu Kim, Xiaofang Zhang, Saewon Kang, Vladimir V. Tsukruk
To construct chiral photonic materials and structures from individual molecular and nanoscale entities, various top-down and bottom-up strategies have been utilised to date. Top-down approaches basically adopt well-established micro/nano fabrication techniques, such as photolithography, e-beam/ion-beam lithography, and laser writing, constructing solid materials into helicoidal architectures [7,8]. On the other hand, bottom-up assembly allows self-‘construction’ of structural organisation at different length scales by directed assembly and richer possibilities for integrating additional components [9]. Traditional organic chiral molecules are capable of self-assembling into chiral nematic (or cholesteric) LC phase with long-range helical structure sensitive to external stimuli [10]. Overall, chirality is ubiquitous across multi-length scales, including DNA and peptides at the molecular level, various protein nanofibers at the nanoscale, and biopolymer chiral hierarchical structures at the microscale and macroscale (Figure 1) [11–20].
State of the Art of Nanoantenna Designs in Infrared and Visible Regions: An Application-Oriented Review
Published in IETE Technical Review, 2022
Priya Ranjan Meher, Abhiram Reddy Cholleti, Sanjeev Kumar Mishra
Over the last few years, significant progress has been made in various aspects of nanoantenna technology. The design principle of nanoantennas is similar to RF antennas and those resonate over visible range is referred as Optical Nanoantennas. Nanoantennas offer some attractive advantages in terms of rapid time response, polarization purity and better efficiency in the far-field region [1]. In nanoantenna, nanofabrication gives support in fabricating devices for various applications that were designed for achieving better performance and efficiency [2] at nanoscale. Different nanofabrication techniques are used such as Photolithography [3], Electron Beam Lithography [4,5], Focused Ion Beam Lithography [6,7], Nanoimprint Lithography [8], Roll to Roll Printing [9], and Solid-State Superionic Stamping [10]. During the past decade, there was an activity in the research on the properties of nanoparticles of metals and the construction of metal structure at the nanoscale, supporting the development in designing nano devices. This is creating an opportunity for innovation and development in the field of photonics.
Optimization of light absorption in ultrathin elliptical silicon nanowire arrays for solar cell applications
Published in Journal of Modern Optics, 2022
Seyedeh Leila Mortazavifar, Mohammad Reza Salehi, Mojtaba Shahraki, Ebrahim Abiri
A good trade off between performance and cost-effectiveness is achieved by edge-transfer fabrication. This approach is intended for patterning SiNWs with different dimensions without requiring high-tech nanolithography. So, it can be integrated with typical micro-fabrication plants. The primary principle of this manufacturing route is dependent on making a mask of deposited materials at the corner/edge of a substrate structure. Next, the SiNWs are made from wafer through a typical etching step using the pre-determined mask or by turning the vertical thickness of the masking materials to lateral width in nanowire patterns [37]. NWs can be made by trimming down. In this method, the patterned Si structures can be thinned through oxidation trimming or wet chemical etching [38]. Superior lithography such as electron beam lithography, dip-pen nanolithography and targeted ion beam lithography make contributions to fast prototyping as they are able to at once pattern excessive-resolution NWs without requiring photomasks. A top-down nanofabrication method is chosen to turn SOI wafers into SiNWs. This implies the adoption of direct-write electron beam lithography and inductively coupled plasma-reactive ion etching (RIE). The suggested process of manufacturing adopted single UV lithography, deep RIE and wet oxidation [39].