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Bipolar Junction Transistor
Published in Nassir H. Sabah, Electronics, 2017
For the same or somewhat larger βF, the doping concentration NAB in the base can be increased. The resulting increase in conductivity of the base has two desirable consequences: (1) reduction in rB, which as explained earlier, improves the high-frequency response; (2) the depletion region on the base side of the BCJ becomes narrower, which reduces base-width modulation and increases the early voltage VA as well as the punchthrough voltage. Alternatively, the doping concentration NDE in the emitter can be reduced. This increases the width of the depletion region on the emitter side of the BEJ, which reduces Cje. It is seen that the HBT gives more flexibility in tailoring transistor performance to particular applications.
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Published in John D. Cressler, H. Alan Mantooth, Extreme Environment Electronics, 2017
To build all this, we use a variety of IC technologies. As in terrestrial circuits, CMOS is widely employed due to its advantages in density and power efficiency. Due to its advantages in bandwidth, output drive, and precision, however, bipolar and BiCMOS technologies play a major role in space electronics. Bipolar integrated circuits are used in a wide variety of applications, including high speed clock generation, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), RF/analog circuitry, and power supplies. Among the many bipolar technologies being utilized, GaAs, SiGe, and InP heterojunction bipolar transistor (HBT) technologies offer the highest performance. SiGe HBTs are good candidates for mixed signal system-on-chip applications such as data converters, because they allow integration with silicon CMOS [6]. InP HBTs are widely used in optoelectronic components (due to direct bandgap), and ultra-high-speed (e.g., 40 GHz) phase locked loop (PLL) and serializer/deserializer (SERDES) devices [7].
Heterostructure Bipolar Transistors
Published in Mike Golio, RF and Microwave Semiconductor Device Handbook, 2017
Heterojunction bipolar transistors (HBTs) differ from conventional bipolar junction transistors (BJTs) in their use of hetero-structures, particularly in the base-emitter junction. In a uniform material, an electric field exerts the same amount of force on an electron and a hole, producing movements in opposite directions as shown in Fig. 5.1a. With appropriate modifications in the semiconductor energy gap, the forces on an electron and a hole may differ, and at an extreme, drive the carriers along the same direction as shown in Fig. 5.1b.1 The ability to modify the material composition to independently control the movement of carriers is the key advantage of adopting hetero-structures for transistor design.
Gamma-Induced Degradation Effect of InP HBTs Studied by Keysight Model
Published in Nuclear Science and Engineering, 2021
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
With a large band gap material for the emitter layer, heterojunction bipolar transistors (HBTs) fabricated by either molecular beam epitaxy or metal organic chemical vapor deposition growth techniques are often used in communication systems of military and commercial space satellites.1,2 These devices not only have superior electronics transport properties but also offer higher radiation hardness as compared to Si-based devices. On the basis of indium phosphide (InP)/indium gallium arsenide (InGaAs) and indium aluminum arsenide (InAlAs)/InP heterojunctions, HBT lattices matched to InP substrates have received considerable use in many high-speed analog, digital, and mixed signal applications. Additionally, the high radiation hardness of InP HBTs is an important consideration for radiation environment applications.3–5
W-Band CMOS down-conversion mixer using micromixer-based gain-enhanced technique
Published in International Journal of Electronics, 2019
Yo-Sheng Lin, Kai-Siang Lan, Ching-Hung Peng
In previous work, GaAs HEMT and SiGe HBT processes (Ajayan & Nirmal, 2017; Han, Wang, & Gao, 2014) were widely used in V-band (50 ~ 75 GHz) and W-band (75 ~ 110 GHz) millimetre-wave (mm-wave) integrated circuits (ICs) (Huang, Wang, & Chu, 2004; Kim, Kornegay, Alvarado Jr., Lee, & Laskar, 2009). Because of the swift advancement of the CMOS technology, now it is commonly applied to the design and implementation of V- and W-band mm-wave ICs (Kashani & Nabavi, 2018; Lin, Lan, Chuang, & Lin, 2018; Lin, Lan, Wang, & Li, 2017; Lin, Lee, Huang, Wang, Wang, & Lu, 2012; Souliotis & Plessas, 2013). In mm-wave receiver design, down-conversion mixer/micromixer is an important circuit. Its function is the reception of the information-carrying mm-wave signals (i.e. the amplified received signals of the antenna) from LNA (low-noise amplifier), and amplification and demodulation of the received mm-wave signals. The primary requisites for a down-conversion mixer/micromixer are low power and noise, broadband impedance matching (at RF, LO and IF ports), low port-to-port (i.e. LO-to-RF, LO-to-IF and RF-to-IF) leakage, and prominent gain and linearity.
Total Ionizing Dose Effects of SiGe HBTs Induced by 60Co Gamma-Ray Irradiation
Published in Nuclear Science and Engineering, 2018
Shu-Huan Liu, Aqil Hussain, Da Li, Xiaoqiang Guo, Zhuo-Qi Li, Olarewaju Mubashiru Lawal, Jiangkun Yang, Wei Chen
SiGe heterojunction bipolar transistors (HBTs) made with bandgap engineering are able to achieve excellent performance while maintaining compatibility with conventional Si complementary metal-oxide semiconductor manufacturing, such as low noise, high speed, low cost, and irradiation hardness, without any additional process modifications. SiGe HBTs also maintain perfect work performance in very high- or low-temperature environments, etc.1–5 Therefore, SiGe HBTs have the potential to be used in some special electronic systems due to their excellent characteristics. These types of systems mainly operate in extreme environments,1 for instance, nuclear power, space, radar systems, and high-energy accelerator detector systems.1–7