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Semiconductors
Published in Mike Golio, RF and Microwave Semiconductor Device Handbook, 2017
Indium phosphide (InP) is an important compound semiconductor for microwave and RF devices due to its physical and electronic properties. Some of the most important properties of InP are high peak electron velocity, high electric field breakdown, and relatively high thermal conductivity. Three-inch diameter bulk, semi-insulating InP wafers are available and four-inch diameter wafers are being validated. Indium phosphide has a zincblende crystalline structure like gallium arsenide and its lattice constant is 5.8687 angstroms compared to 5.6532 angstroms for GaAs. This materials property is important in the growth of hetero-structures as discussed below. Bulk InP is used in the fabrication of opto-electronic devices but is not used directly for microwave and RF applications. In microwave and RF devices, InP is used as a substrate for epitaxial growth to support GaInAs/AlInAs pseudomorphic high electron mobility transistors. This material system has proved to be a more desirable choice for microwave power amplifiers and millimeter-wave low noise amplifiers.
Introductory Concepts
Published in Dragica Vasileska, Stephen M. Goodnick, Gerhard Klimeck, Computational Electronics, 2017
Dragica Vasileska, Stephen M. Goodnick, Gerhard Klimeck
By far, silicon (Si) is the most widely used material in semiconductor devices. Its combination of low raw material cost, relatively simple processing, and a useful temperature range make it currently the best compromise among the various competing materials. Silicon used in semiconductor device manufacturing is currently fabricated into rods that are large enough in diameter to allow the production of 300 mm (12 in.) wafers. Germanium (Ge) was a widely used early semiconductor material but its thermal sensitivity makes it less useful than silicon. Today, germanium is often alloyed with silicon for use in very-high-speed SiGe devices; IBM is a major producer of such devices. GaAs is also widely used in high-speed devices, but so far, it has been difficult to form large-diameter boules of this material, limiting the wafer diameter to sizes significantly smaller than silicon wafers, thus making mass production of GaAs devices significantly more expensive than silicon. Other less common materials are also in use or under investigation. Silicon carbide (SiC) has found some application as the raw material for blue LEDs and is being investigated for use in semiconductor devices that could withstand very high operating temperatures and environments with the presence of significant levels of ionizing radiation. IMPATT diodes have also been fabricated from SiC. Various indium compounds (indium arsenide, indium antimonide, and indium phosphide) are also being used in LEDs and solid-state laser diodes. Selenium sulfide is being studied in the manufacture of photovoltaic solar cells.
Force-System Resultants and Equilibrium
Published in Richard C. Dorf, The Engineering Handbook, 2018
A heterostructure photodiode uses more than one semiconductor material. An example of a heterostructure photodiode is shown in Figure 119.36. We start off with a heavily doped N-type indium phosphide N+InP) substrate. Indium phosphide is a III-V compound semiconductor. A more lightly doped N- type indium phosphide (N InP) epitaxial layer is then deposited on the N+InP substrate. The next epitaxial layer that is deposited is a ternary III-V compound semiconductor, N-type indium gallium arsenide, In0.53Ga0.47 As. Then there is the diffusion of acceptors through a diffusion mask to produce a P+ region of InGaAs. Metallization and patterning form the anode contact of this photodiode. The InP layer has an energy gap of EG=1.35eV. The ternary compound In.53Ga.47 As has a much smaller energy gap of EG=0.75eV. The bottom contact metallization is deposited and patterned to have an opening or window for light to enter the device, as shown in Figure 119.37. The dimensions of these diagrams are not to scale, and in actuality the N+InP substrate is much thicker than the InP and InGaAs epitaxial layers.
A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts
Published in Australian Journal of Electrical and Electronics Engineering, 2020
Sezai Asubay, Abdulmecit Turut
Indium phosphide (InP) has an important potential for the development of optoelectronic and high-speed devices in the semiconductor technology. Therefore, the fabrication of high quality Schottky rectifier contacts is an essential prerequisite to improve the performance and development of a lot of advanced devices such as photodiodes, field-effect transistor (FET) and metal-semiconductor FET (MESFET). The metal/InP Schottky rectifier contacts for the application of InP to microwave and optoelectronic devices led to great interest (Janardhanam et al. 2010; Chen et al. 1995; Van Den Berghe et al. 1990; Asubay, Gullu, and Turut 2009; Sreenu, Prasad, and Reddy 2017). The current-voltage (I–V) and capacitance-voltage (C-V) characteristics of the Ti/p-type InP Schottky rectifiers were only investigated at three different temperatures such as 300 K, 350 K and 400 K by Janardhanam et al. (Janardhanam et al. 2010). 30-nm thick Ti and 30-nm thick Ni Schottky contacts were sequentially deposited using e-beam evaporator under a vacuum of 7 × 10−7 Torr by the authors in (Janardhanam et al. 2010). Ni films as a capping layer were used to minimise the contamination of Ti films. The barrier height (BH) values of 0.73, 0.74 and 0.76 eV at 300 K, 350 K and 400 K were reported for Ti/p-type InP Schottky rectifiers fabricated by Janardhanam et al. (Janardhanam et al. 2010). The BH values of 0.85 eV and 0.92 eV and 0.83 eV (room temperature) for the evaporated Ti/p-type InP contacts were also reported by Van Den Berghe et al. (Van Den Berghe et al. 1990) and Asubay et al. (Asubay, Gullu, and Turut 2009), Sreenu et al. (Sreenu, Prasad, and Reddy 2017) respectively.
Pressure effect on structural, electronic optical and thermodynamic properties of cubic AlxIn1-xP: a first-principles study
Published in Molecular Physics, 2020
B. Bencherif, A. Abdiche, R. Moussa, R. Khenata, Xiaotian Wang
Recently, III–V zinc-blende semiconductor compounds have found important technological applications especially in the fabrication of electronic and optoelectronic devices. Indium phosphide InP is a very interesting semiconductor used in high-power and high-frequency electronic devices due to its superior electron mobility. Its direct band gap nature also makes it a suitable candidate for optoelectronic applications. For the InP compound, there is experimental evidence for a transition from the low-pressure zinc-blende phase to a site-ordered NaCl phase [1,2] which undergoes a Cmcm-type distortion [3] when pressure is increased.