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Introduction
Published in Samar K. Saha, FinFET Devices for VLSI Circuits and Systems, 2020
A FinFET or a “fin” field-effect transistor (FET) is a metal-oxide-semiconductor (MOS) device where the gate is placed on two sides of a thin vertical semiconductor body standing on a substrate. This novel device was invented by Yutaka Hayashi at the Electrotechnical Laboratory, Tsukaba, Japan in 1980 [1] and the manufacturing device technology was developed in the late 1990s by the research group led by Chenming Hu at the University of California Microfabrication Lab, Berkeley, CA [2]. The “Fin” in the acronym FinFET describes an ultrathin-body “fin” of a semiconductor material such as silicon as the channel of an FET device. In FinFET device architecture, the gate may be placed on two, three, four sides, or all around the ultrathin-body fin for improved device performance, and the devices could be fabricated on silicon or silicon-on-insulator (SOI) substrates [3,4]. The FinFETs offer significantly superior device performance including faster switching speed and higher current drive compared to the mainstream metal-oxide-semiconductor field-effect transistors (MOSFETs) [3–7]. Thus, considering the advantages of FinFETs over the conventional MOSFETs, Intel was the first to introduce triple-gate FinFET technology into mass production at the 22 nm node in the year 2011 [8]. This chapter presents a brief introduction and the history of the development of FinFET device technology.
Motivation Behind High Electron Mobility Transistors
Published in D. Nirmal, J. Ajayan, Handbook for III-V High Electron Mobility Transistor Technologies, 2019
FinFET, also known as Fin Field Effect Transistor, is a type of non-planar or 3D transistor used in the design of modern processors. As in earlier planar designs, it is built on an SOI (silicon on insulator) substrate. However, FinFET designs also use a conducting channel that rises above the level of the insulator, creating a thin silicon structure, shaped like a fin, which is called a gate electrode. This fin-shaped electrode allows multiple gates to operate on a single transistor [34]. A schematic of a FinFET device is shown in Figure 1.14.
Impact of Nanoelectronics in the Semiconductor Field
Published in Shilpi Birla, Neha Singh, Neeraj Kumar Shukla, Nanotechnology, 2022
A fin field-effect transistor (FinFET) is a multi-gate MOSFET device, and it is a nonplanar, multi-gate MOS structure mounted on an SOI substrate. It is mounted on a substrate with the gate wrapped around the channel or on two, three or four sides of the channel, forming a multi-gate configuration. FinFET is a generic term used for these devices since the source/drain fields on the silicon surface are shaped like fins. The attractive features of FinFET are a maximum current density and marginally faster switching than planar CMOS [9].
A Novel Design of Low Power & High Speed FinFET Based Binary and Ternary SRAM and 4*4 SRAM Array
Published in IETE Journal of Research, 2023
N. Shylashree, M. S. Amulya, Gulur R. Disha, N. Praveena, Vijay Kumar Verma, S. Muthumanickam, V. Kannagi, K. Sivachandar, Vijay Nath
To ensure the power consumption of the designed SRAM cell is as low as possible, Fin Field Effect Transistor (FinFET) technology is used. The other advantages of FinFET are higher output current per input voltage, higher switching speeds, and reduced short-channel effects. FinFET is a type of non-planar transistor that is used in the design of various digital circuits. There is a gate electrode, shaped like a fin present in the FinFET design. All transistor designs in this paper are done using 18nm FinFET technology.
An Overview on MOSFET Drivers and Converter Applications
Published in Electric Power Components and Systems, 2021
Mustafa Ergin Şahin, Frede Blaabjerg
As a novel, a fin field-effect transistor (FinFET) is a multi-gate device. A MOSFET is built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure. These devices are called FinFETs because the source/drain region includes fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar complementary metal-oxide-semiconductor (CMOS) technology [103].