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The Future of Electronics
Published in John D. Cressler, Silicon Earth, 2017
Stop #1: Ferroelectric memory. Ferroelectrics? Recall: Ferroelectricity is a property of certain materials that have a spontaneous electric polarization that can be reversed by the application of an external electric field. Your hard disk drive works this way (Chapter 6). Ferroelectric RAM (FeRAM) is a random-access memory similar in construction to DRAM but which instead uses a ferroelectric layer instead of a dielectric layer to achieve nonvolatility. The basic idea can be traced to grad student Dudley A. Buck, all the way back in 1952 [30]. Sweet! FeRAMs offer the same basic functionality as a flash memory, but has advantages: lower power consumption, faster write speeds, and MUCH longer write/erase cycle lifetimes (exceeding 1016 cycles for 3.3 V devices! Read: forever). But, predictably, there are trade-offs. FeRAMs have lower storage densities than flash, and higher cost.
Memory Devices
Published in Chinmay K. Maiti, Introducing Technology Computer-Aided Design (TCAD), 2017
Ferroelectric material is typically a perovskite material and can be polarized by an electric field where the dipoles align themselves in the same direction of the field. FeRAM is based on a metal–ferroelectric–insulator–semiconductor (MFIS) structure and stores the data in a ferroelectric film. A change in field direction results in a displacement of the dipoles in the crystal structure of the ferroelectric material. The distribution of the charge is then also shifted. Therefore, the material shows hysteresis characteristics, which enables two stable states of the device. However, FeRAM devices face several integration challenges as compatibility with a CMOS is poor. Also the cost per bit and cell size are relatively large.
Computer Architecture
Published in Bogdan M. Wilamowski, J. David Irwin, Fundamentals of Industrial Electronics, 2018
EPROM, EEPROM, and FLASH memories are field-programmable devices that can also be erased and reprogrammed. EPROMs are erased by exposing the storage cells to ultraviolet light to free electrical charge trapped in the memory cells, while EEPROM and FLASH memories are erased electrically. Selected locations can be erased and reprogrammed in an EEPROM, while with a FLASH memory, an entire block of bits in the device must be erased before a location in that block can be reprogrammed. Ferroelectric RAM (FeRAM) technology utilizes ferromagnetic material to retain information when power is removed. While not as dense as FLASH memory, FeRAM devices are faster, consume less power, and allow more read/write cycles.
Crafting the multiferroic BiFeO3-CoFe2O4 nanocomposite for next-generation devices: A review
Published in Materials and Manufacturing Processes, 2021
Tahta Amrillah, Angga Hermawan, Chandrawati Putri Wulandari, Aisyah Dewi Muthi’Ah, Firman Mangasa Simanjuntak
The existing transistor-based random access memory (RAM) technologies (flash, dynamic, and their derivatives) are facing their miniaturization limit.[75] Moreover, the rise of artificial intelligence (AI)-based applications nowadays demand ultra-high-speed, robust endurance, low-powered data storages to accelerate the complex computations that cannot be delivered by conventional memory technologies.[76] Henceforth, emerging nonvolatile memory technologies such as magnetic-based (MRAM), phase-change-based (PCRAM), ferroelectric-based (FeRAM), magnetoelectric-based (MERAM), and resistive-based (ReRAM) memories are being considered as the next-generation data storages; their reliable non-volatility behavior ensures long data retention (the ability to retain the stored information for more than a decade without consuming continuous power).[77]