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Analog Circuit Cells
Published in Wai-Kai Chen, Analog and VLSI Circuits, 2018
Kenneth V. Noren, John Choma, J. Trujillo, David G. Haigh, Bill Redman-White, Rahim Akbari-Dilmaghani, Mohammed Ismail, Shu-Chuan Huang, Chung-Chih Hung, Trond Saether
A BiCMOS technology combines bipolar and CMOS transistors on a single substrate. A bipolar transistor has the advantage over an MOS of a much higher transconductance (gm) for the same dc bias current. Also, bipolar transistors have better high-frequency performance than their MOS counterparts. On the other hand, the practically infinite input resistance at the gate of a MOSFET makes it possible to design amplifiers with extremely high input resistance and an almost zero input bias current. For these reasons, there has been an increasing interest in BiCMOS technologies for implementing high-performance integrated circuits. While most BiCMOS processes offer high-quality NMOS, PMOS, and NPN transistors, advanced BiCMOS processes offer PNP transistors as well.
Semiconductors in Mobile Telecommunications
Published in Saad Z. Asif, 5G Mobile Communications Concepts and Technologies, 2018
As the name suggests, BiCMOS is an integrated circuit integrating a bipolar junction transistor (BJT) and the CMOS transistor in a single integrated circuit. Bipolar transistors provide high speed and gain that are critical for high frequency analog sections, while CMOS exceeds in constructing low-power digital logic gates. Si/SiGe hetero junction bipolar transistors are the key bipolar transistors for analog and mixed signal applications. High voltage NPN and PNP* bipolar transistors are used in applications operating below 5 GHz. These include cellular and WLAN power amplifiers and operational power amplifiers. The key applications of high speed NPN transistors include analog to digital converters, 60 GHz WLAN, and 40/100 Gb/s Ethernet products, whereas high PNP circuits are used in operational amplifiers.
Microcontroller Hardware
Published in Syed R. Rizvi, Microcontroller Programming, 2016
The types of transistors with which all ICs are implemented are either MOSFETs (metal-oxide semiconductor field-effect transistors) or bipolar junction transistors. A circuit technology that uses MOSFETs is CMOS (complementary MOS). TTL uses a bipolar transistor in place of Rc to act like a varying resistance. BiCMOS uses a combination of both CMOS and bipolar. Helpful Hint: If you appreciate the idea that Vout varies depending on the size of the connected load, it will help you realize the reason why in actual circuits the output voltage is not exactly 0 or 5 V.
A high linearity low-noise amplifier in 0.25 μm BiCMOS Qubic4x for GSM application
Published in International Journal of Modelling and Simulation, 2020
Michel Al Khoury, Bernard Jarry, Bruno Barelaud, Julien Lintignat
There are different topologies of LNA: common-emitter, common-collector and common-base (cascade). The choice of these topologies depends on the following parameters: central frequency, gain, noise figure, linearity and impedance matching. Furthermore, BiCMOS technology has improved a variety of things in RF performance such as transistor speed, gain and noise figure. In addition, the BiCMOS process has merged the bipolar device and MOSFET into a common platform.