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Live Free or Die Hard
Published in Aida Todri-Sanial, Chuan Seng Tan, Krzysztof Iniewski, Physical Design for 3D Integrated Circuits, 2017
Yu-Guang Chen, Yiyu Shi, Shih-Chieh Chang
While the semiconductor industry is making every effort to make chips smaller and faster, further scaling of the current 45 nm technology has become prohibitively expensive. Accordingly, there has been a groundswell of interest in technologies that offer a path beyond the limits of device scaling. Among all the possible alternatives, the three-dimensional integrated circuit (3D-IC) is generally considered to be the most promising one, at least in the next decade, for its compatibility with the current technology. Instead of making transistors smaller, 3D-IC makes use of the vertical dimension, and stacks several tiers of circuits together to reduce chip area. It has been anticipated that by 2020 the worldwide market volume of 3D-ICs will exceed 50 billion [1].
Semiconductor Fabrication
Published in Nassir H. Sabah, Electronics, 2017
The minimum feature size is the minimum resolvable metal line widths of the interconnections. It is also the minimum half-pitch, or separation between adjacent metal lines. In a 45 nm technology, for example, the minimum feature size is 45 nm.
Universal Filter Design Using 45 nm FinFET Technology-Based Floating Current Source
Published in IETE Journal of Research, 2023
Nuray Saglam Bedir, Fırat Kacar
The floating current source (FCS) was proposed by Arbel and Goldminz in 1992 as the output stage of current-mode feedback amplifiers (CFAs) [14]. The structure is easy and simple, providing the opportunity to work at high frequencies. Also, it is another feature of the circuit that output currents follow each other with high precision. The structure consists of four transistors and two current sources. In this study, FinFET based FCS is designed with a 45 nm PTM-MG model and compared its performance with conventional transistor-based FCS. Since there is only the PTM model of FinFET transistors, the filter structure was tested in an experimental study using the LM13700 integrated circuit. We aimed to reduce power consumption and chip area usage and increased the bandwidth of the FCS circuit to a high-frequency level. At the end of the study, FinFET FCS-based universal filter was proposed and the results were shared.
Substrate noise evaluation for lightly doped 45nm N-MOSFET using physical simulation models
Published in International Journal of Electronics, 2023
Sanjay Sharma, R. P. Yadav, Vijay Janyani
In this proposed design, a 45 nm semiconductor transistor device was initially designed with low ionisation voltage and high forward current characteristics. Simulation patterns of this model are noise injection, measurement and noise reduction types. Each of these steps is undergone with the help of models designed optimally and presented in this paper. The NMOS transistor focuses on the forward current-voltage (I-V) characteristics using the mobility model in this proposed model. The identical devices are, simulated using analytic, voltage, temperature, constant, empirical mobility models and Lombardi CVT concentration. Volpe’s experiment is used for the empirical mobility model. The mobility model provides different, forward I-V characteristics because of the degree of temperature, concentration, electric field and doping. In contrast, others are used to study frequency-domain or time-domain effects of substrate noise Lombardi CVT concentration, temperature, voltage, constant, empirical mobility model.
Fast and Low-Power CMOS and CNFET based Hysteresis Voltage Comparator
Published in IETE Journal of Research, 2023
Abhay S. Vidhyadharan, Gangavarapu Anuhya, Shivangi Shukla, Sanjay Vidhyadharan
The analysis CNFET device characteristics and the design of CNFET based comparator has been done in the EDA (Cadence®) using the compact SPICE model proposed by [23,24]. The industry-specified 45 nm gdpk MOSFET technology files library is pre-loaded in Virtuoso EDA (Cadence®) along with layout structures, DRC, and LVS rules. To make a meaningful comparison, the CNFET based comparator has also been implemented at 45 nm technology node. A VDD of 1 V has been utilized as stipulated by International Technology Roadmap for Semiconductors for the 45 nm MOSFET devices. The transfer-characteristics of the CNFET has been compared with that of MOSFET in Figure 24. The ION of CNFETs is lesser than that of CMOS devices, nevertheless, because the ION:CGG and ION:IOFF ratios of CNFETs are eighteen and seven to ten times greater, respectively, than the CMOS devices, the CNFET can operate faster while consuming significantly reduced power. The benchmarked summary of the CNFET vs. MOSFET device characteristics is shown in Table 2.