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Multimedia Contents Encryption Using the Chaotic MACM System on a Smart-display
Published in S. Ramakrishnan, Cryptographic and Information Security, 2018
Rodrigo Méndez-Ramírez, Adrian Arellano-Delgado, Miguel Angel Murillo-Escobar, César Cruz-Hernández
Currently, some smart display manufacturers are Microchip, Display Tech, Winstar, New Haven Displays, and RBID Prototypes. The compact smart displays are represented with Thin Film Transistor (TFT) LCD displays and touch screen (TS) modules with the purpose to implement a friendly interface for the end user, e.g., tablets, smart-phones, smart-tvs, and monitors. Some manufacturers of TFT LCD controllers are Himax, Solomon Systech, Renesas SP, Sitronix, and Ilitek. One touch screens are featured in the resistive and capacitive versions, some TS manufacturers are Thinktouch, CJ Touch, Neoser, Stone Technology, and Multi-Inno Technology. The smart-display is controlled by an ES, where the main part is implemented depending the applications to reproduce multimedia contents such as video, image, and audio in which the multimedia contents depend of the performance of the main processor, e.g., microprocessor, microcontrollers, DSP, FPGA. The same case happens with the quality of TFT LCD displays that depend of the response time, brightness, and pixel structure.
Module Assembly and Optoelectronic Packaging
Published in Yufeng Jin, Zhiping Wang, Jing Chen, Introduction to Microsystem Packaging Technology, 2017
Yufeng Jin, Zhiping Wang, Jing Chen
According to the time of technology development, LCD has been through three stages. From the 1970s to the early 1980s, twisted nematic LCD (TN-LCD) was popular, which had a simple structure and fabrication process. But it had very poor display capacity and was mainly used in watches, calculators, digital displays, and similar simple electrical products. Advanced TN-LCD was used in meters, cameras, telephones, mobile meters, sound boxes, and so on. In the mid 1980s, super twisted nematic (STN-LCD) LCD was developed. With its high performance, large display capacity, and low cost, it was extensively used in automated office products and communication consuming products, such as cell phones, PDAs, GPSs, laptops, pagers, digital dictionaries, electronic diaries, learning machines, and so on. In the 1990s a new thin-film transistor LCD (TFT-LCD) was developed. Through sputtering or the chemical deposition process, various films are fabricated on glass or plastic substrate to make a large-scale integrated circuit in TFT. The cost decreased sharply using non–single crystal substrate, and conventional large-scale integrated circuits have been developed as pioneers of large area, multiple functions, and low cost. It is more difficult to fabricate controllers to switch on/off pixels (LCD or LED) on glass or plastic substrate with a large area in TFT than to fabricate large-scale IC on silicon. Requirements for the fabrication environment (class 100 level), for material purity, and for manufacturing instruments and techniques are superior to those for large-scale ICs, since they are the most advanced technologies of modern mass production. In applications, the bottleneck of TFT-LCD is to overcome the disadvantage of long response times for STN-LCD, and it also presents high-quality color displays and flexible display sizes. It is widely used in digital cameras, camcorders, televisions PCs, and especially in laptop computers.
A metal oxide TFT gate driver with a single negative power source employing a boosting module
Published in Journal of Information Display, 2020
Yan-Gang Xu, Jun-Wei Chen, Wen-Xing Xu, Lei Zhou, Wei-Jing Wu, Jian-Hua Zou, Miao Xu, Lei Wang, Jun-Biao Peng
Thin-film transistors (TFTs) are the key to implementing active-matrix flat panel displays (FPDs), such as the active-matrix organic light-emitting diode (AMOLED) or the thin-film transistor liquid crystal display (TFT LCD). Integrating gate driver circuits on glass substrates can eliminate the conventional gate driver integrated circuit (IC), reduce the fabrication cost, and make FPDs thinner and the borders narrower [1–3]. Metal oxide TFTs (MOTFTs) have attracted much attention of late due to their several advantages, such as their good uniformity, high mobility, and low process temperature [4,5]. Unlike a-Si:H or low-temperature polysilicon (LTPS) TFTs, however, MOTFT generally operates in depletion mode, and there will be considerable leakage current when the gate source voltage is zero [6,7]. Therefore, the gate driver integrated by MOTFTs has problems due to its depletion mode.
Ant colony optimisation algorithms for two-stage permutation flow shop with batch processing machines and nonidentical job sizes
Published in International Journal of Production Research, 2019
Xu Zheng, Shengchao Zhou, Huaping Chen
Thin-film transistor-liquid crystal display (TFT-LCD) manufacturing involves a set of processes for producing TFTs, colour filters, cells, modules and other components. The TFT manufacturing process involves embedding transistors at the top of a glass substrate. After the glass substrate is cleaned, it is coated with a film layer, which is essential for creating the appropriate shape. Then, a layer of light-sensitive material is applied to the top of the film. An abstracted and simplified scheduling model for these operations can be formulated as a two-stage blocking permutation flow shop scheduling problem with BPMs, nonidentical job sizes, arbitrary release times for the first BPM and a fixed setup time for the second BPM. During execution, a process cannot be interrupted or terminated. In each stage, the processing time of a batch is equal to that of the job with the longest processing time in the batch. Additionally, once a batch has been completed on the first machine, it cannot be removed until the second machine is free. The ultimate objective of this model is to group jobs into batches and sort these batches in the same sequence in each stage such that the makespan (i.e. the completion time of the cleaning operation for the second machine) is minimised. Using standard three-field notation (Graham et al. 1979), this problem can be represented as , which is an extension of the simplified NP-hard problem.