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Nanowire Transistors
Published in Chinmay K. Maiti, Fabless Semiconductor Manufacturing, 2023
The performance of integrated circuits has improved significantly through scaling during the last six decades. The downscaling of MOS transistors has been limited by the SCE. To overcome the SCE, the strain was introduced. Below the 90 nm technology node, strain engineering appears to be one of the reliable technologies for the improvement of overall carrier mobility in planar transistors. Similarly, high-k/metal gate stacks are in use since 45 nm technology node to overcome gate leakage and static power dissipation [15]. It was not sufficient for further scaling of the devices. In this regard, the introduction of triple gate structures (mainly in FinFETs) has emerged as a defending contender to overcome the SCE along with further miniaturization. The channel electrostatics was improved by taking triple gate structures with scaling of gate length down to 15 nm at 7 nm technology node [16]. The performance of triple gate structures is degraded below 7 nm technology node [17]. The scaling of gate length can be continued in sub-10 nm node with improved electrostatics using GAA nanowire transistors [18]. The best electrostatic control of the gate over the channel can be achieved only when it can be controlled from all sides of the channel.
Structure, Phonons, and Defects
Published in Yongqing Cai, Gang Zhang, Yong-Wei Zhang, Phosphorene, 2019
Yongqing Cai, Gang Zhang, Yong-Wei Zhang
One of the advantages of 2D materials is their highly flexible structures, which can normally deform easily in bending or stretching configurations relatively. Strain engineering is an important technique to effectively tune the electronic, vibrational, optical, and chemical activities of 2D materials. The ability to quantify the strain subjected by the 2D materials is critical for strain engineering. Phosphorene is an ideal material for realizing strain engineering due to its good ability to sustain high strain up to 30%. Its unique puckered structure shows a strong anisotropic behavior under different deforming configurations.
Semiconductor Memory Technologies Overview
Published in Shimeng Yu, Semiconductor Memory Devices and Circuits, 2022
First, the strained silicon technology was introduced in the 90 nm node [9]. The raised source/drain contacts used SiGe material instead of pure silicon, originally as a mechanism to reduce the series resistance. It turned out that the SiGe imposed a compressive strain on the PMOS transistor, and the strained silicon’s crystal structure effectively changed the energy band structure, leading to an improvement in hole mobility. On the other hand, the Si3N4 capping layer induced tensile strain on the NMOS transistor. Strain engineering has been applied to all the technology nodes below 90 nm to improve carrier mobility.
Electric potential and energy band in ZnO nanofiber under arbitrarily-located axial mechanical loadings
Published in Mechanics of Advanced Materials and Structures, 2022
Strain is a universal phenomenon and almost inevitable in the synthesis, fabrication, and application of all types of materials [1–3]. Strain can modify the band energy or carrier mobility and further improve the performance of electronic and photonic semiconductor devices [4–9]. As such, strain engineering, born as an innovative technique, has been utilized to study the effects mentioned above since strain is recognized as a useful and economical way to modulate energy band [10–13]. As nanostructured materials remain integrity when subjected to strains many times larger than their counterparts can withstand, they are quite suitable to strain engineering [14]. Tuning the electronic and optical properties of semiconductor materials via strain engineering has come true recently, such as the enhancement of charge carrier mobility [15, 16], band gap opening in graphene [17–19], turn of indirect band gap to direct band gap [20–22], transition of semiconductor to conductor [23, 24], tune of the effective mass of carriers [25–27] and so on. Among the various calculation methods [28–33] for the band structure of semiconductor devices under strain, k·p method is effective and computationally efficient [34]. In this method, the Hamiltonian near the band edges is vital for comprehensively understanding semiconductor properties since the fundamental electric properties are mainly determined by the band structure near the direct band edges [35].
Recent progress in three-dimensional flexible physical sensors
Published in International Journal of Smart and Nano Materials, 2022
Fan Zhang, Tianqi Jin, Zhaoguo Xue, Yihui Zhang
Strain engineering in semiconductor is one of the most attractive routes to modify its physical properties, such as the optical bandgap. Figure 2c presents a strain-induced reduction of the Si bandgap, resulting in photodetection capabilities far beyond its fundamental absorption limit of 1000 nm in Si nanomembranes (NM)-based 3D photodetectors[74]. The Si NM photodetector array was fabricated on silicon-on-insulator (SOI) wafers, and transferred onto PI substrates. Thereafter, the Si NM photodetector array was mechanically stretched (biaxially) by a maximum strain of ~ 3.5% through pneumatic pressure-induced bulging, which was shown to offer an enhanced photoresponsivity and extend the Si absorption limit up to 1550 nm, with a promising potential for Si-based infrared photodetectors.
Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN
Published in International Journal of Smart and Nano Materials, 2020
Wantong Hou, Zhanbin Qi, Hang Zang, Yan Yan, Zhiming Shi
The indirect band gap seriously hindered the applications of 2D so-AlN on lighting devices. It should be promising to realize direct band gap. The application of strain engineering in 2D materials is different from that in traditional materials, as nanomaterials are mechanically much stronger. We can apply far greater tensile stresses to tune their properties than is possible with traditional materials. Many reports have demonstrated that strain engineering is an effective tool to control the properties of 2D materials [41–43]. Here, we employed a 5 ML 2D so-AlN as an example and applied in-plane stress from −5% (compression) to 5% (tension) along the X, Y, and XY axes.