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Distributed Generation Technology
Published in KTM Udayanga Hemapala, MK Perera, Smart Microgrid Systems, 2023
KTM Udayanga Hemapala, MK Perera
The voltage–current characteristic curve for a p-n junction diode is defined by the well-known Shockley Diode equation, as shown in equation (2.5). Id=I0⌈eqVdAkT−1⌉=I0⌈eVdAVT−1⌉
oeic on GaAs substrate
Published in G B Stringfellow, Gallium Arsenide and Related Compounds 1991, 2020
K. Goto, E. Ishimura, T. Shimura, M. Miyashita, Y. Mihashi, T. Shiba, Y. Okura, E. Omura, H. Kumabe
Recently, interest in new device technologies for digital optoelectronic circuits has been mounting. Optical switches will be necessary elements for optical signal processing and digital communication systems. An optoelectronic switch consisting of a bipolar inversion channel field-effect transistor was demonstrated [1]. An optical inverter consisting of a vertically integrated heterojunction phototransistor (HPT) and a light emitting diode (LED) has been realized [2]. A pulsed GaAs laser has been demonstrated also using a p-n-p-n structure [3]. Theoretical analysis of p-n-p-n devices have been carried out by several authors [4–6]. The operational principles of all of these two terminal optoelectronic devices are all similar to the Shockley diode. In this paper, we describe a heterojunction bipolar transistor (HBT) vertically integrated with a quantum well (QW) LED. The overall structure is an N-p-n-p diode with a heterojunction emitter. Switching is achieved by controlling the injection efficiency of the heterojunction emitter by external base current or the HBT can function as an HPT enabling the use of optical excitation. By modulating both the external base current and the optical excitation, this device can function as a high sensitivity optical switch or as an erasable programmable optical memory element.
Characterization, Part I
Published in Edwin S. Oxner, Fet Technology and Application, 2020
Leakage currents for low-voltage FETs closely obey the simple Shockley diode model that predicts I=I0[exp(qVkT)-1](4.3)
Comparing the economic performance of ice storage and batteries for buildings with on-site PV through model predictive control and optimal sizing
Published in Journal of Building Performance Simulation, 2022
Kairui Hao, Donghun Kim, James E. Braun
A photovoltaic system converts sunlight into DC electricity that can be used on site or support other grid users when extra generated electricity is available. The fundamental element is a PV cell which can be grouped into PV panels and arrays. A single diode model of a PV cell (Figure 5) (Sera, Teodorescu, and Rodriguez 2007) was utilized in this study to obtain a photovoltaic output power profile. is the current generated by the incident light, is the Shockley diode Equation (22), is the equivalent series resistance of the module and is the equivalent parallel resistance. where is the diode current, is the reverse saturation current, is the voltage across the diode, and is the thermal voltage defined as . A is the ideality factor, k is the Boltzmann constant, T is the diode temperature, and q is the electron charge.
Novel Hybrid PV Configurations to Enhance the Output Power and Efficiency by Minimising the Number of Peaks and Mismatching Loss
Published in IETE Journal of Research, 2021
Aditi Atul Desai, Suresh Mikkili
The equation for the cell current (Icell) is given by Equation (1) Here Ip is the photocurrent generated by solar radiations, Id is the diode current and Ish is the current flowing through shunt resistance. The equations for photocurrent, Shockley diode current and shunt resistance current are given in Equation (2)–(4), respectively. Isc is the current in short circuit condition of the cell, Ki is the temperature coefficient of short circuit current [30], H is the solar insolation in KW/m2, T is the operating temperature of the cell in Kelvin. Io is the diode reverse leakage current, Vcell is the cell terminal voltage, q is the electron charge (1.60217646 × 10−19C), Rs is the series resistance of the PV cell in Ω, K is Boltzmann’s constant (1.3806503 × 10−23 J/K) [31] and A is the ideality factor of diode. Here Rsh is the shunt resistance of the PV cell in Ω.
Parameter extraction of solar panels using the graphical method
Published in International Journal of Ambient Energy, 2020
Mohamed Bencherif, Tayeb Benouaz
The equation, which connects the series resistance, the diode current and the thermal voltage using the equivalent circuit of Figure 1. From the equivalent circuit shown in Figure 1, the diode current Id will be symbolised by X is written as: The diode law or the Shockley diode equation is: Substitute currents Iph of Eq. (15) into Eq. (16), we get: The shunt resistance Rsh drawn from Eq. (18) yields: Substituting the currents Is of Eq. (13) into Eq. (17), after the following minor approximation; Since the values of open circuit voltage is larger than the difference between the values of the terminal voltage of the diode and open circuit voltage (Voc≫V+RsI-Voc), it obvious that (−Voc exponential (−Voc/a). From this consideration, the diode current can be simplified to: Substituting the shunt resistance Rsh of Eq. (19) into Eq. (20) yields: To reduce the number of parameters; using the condition of maximum power (MP).