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Emerging NVMs and Limitations of Current NVM Devices
Published in Arup Bhattacharyya, Silicon Based Unified Memory Devices and Technology, 2017
A relatively recent contender of silicon based NVMs, resistive RAM, could potentially be a serious contender of current NVM devices spanning the application possibilities from embedded to stand-alones and of displacing NAND/SDD and HDD in future [19]. The nonvolatile core consists of a thin film of transition metal oxide sandwiched between two metal electrodes which could be switched between stable low resistance and high resistance states at switching currents of <10 uA and at switching voltage of <3 V. The cell can be configured either with a switching transistor similar to PRAM or MRAM or without a switching transistor with multistack cross bar array architecture as a memristor cell [not shown]. The memristor cell displays nonlinear I–V characteristics [19]. The mechanism associated with the change in resistance is reproducible and stable ionic redistribution under the influence of heat or an electric field. ReRAM has the attractive attributes of low power operation with low write energy of ~1E–13 J/bit, scalability with cell size <4F2, low latency with W/E time in the range of ~10 ns, long retention (>10 years), and high endurance (~1E12).
Oxide Memristor and Applications
Published in Simon Deleonibus, Emerging Devices for Low-Power and High-Performance Nanosystems, 2018
Mingyi Rao, Rivu Midya, J. Joshua Yang
The state-of-the art mainstream nonvolatile storage device has been Flash. However, Flash suffers from a slow operation speed and a high voltage for the write operation. Among new types of nonvolatile memories, ReRAM has attracted a lot of interest for its remarkable characteristics in electrical performance and scalability. Several large-scale ReRAMs have been reported recently. In 2014, Liu et al. presented a 32 Gb ReRAM chip with a 230 μs write latency [47]. In the same year Fackenthal et al. presented a 16 GB chip with only a 10 μs write latency [48].
Novel CMP for Next-Generation Devices
Published in Ungyu Paik, Jea-Gun Park, Nanoparticle Engineering for Chemical-Mechanical Planarization, 2019
The prototype ReRAM device offers low fluctuation of resistance value even during high-speed operation. The ReRAM technology “is amenable to miniaturization and can be manufactured inexpensively,” so it is seen as an alternative to flash, the company explained. “If further minute non-volatile memory can be realized using ReRAM, there is potential for higher performance of mobile devices.”
Self-assembled molecular devices: a minireview
Published in Instrumentation Science & Technology, 2020
The data in the ReRAM are stored as “0” (off, high resistance state) or “1” (on, low resistance state) by the resistance of the active layer under the electrical stimulation. It is critical to establish precise relationships between molecular structure, film parameters and storage characteristics for the sake of designing organic data storage devices. Electroactive molten pyrrole derivatives fabricated by Balasubramanyam et al.[43] in a vertical sandwich charge transport diode (MIMS) with indium tin oxide (ITO) and Al as active electrodes can be used as dynamic random access memory (DRAM). They also studied the effect of annealing temperature on the film morphology. The results at 30, 80, 100, 120 and 150 °C showed that the roughness of film root mean square (RMS) at 100 °C was higher than at 30 °C and 80 °C, which can achieve better charge transport. However, at 120 °C and 150 °C, the films produced voids, which led to short circuits in the fabrication process of devices.
Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces
Published in Science and Technology of Advanced Materials, 2020
Takafumi Ishibe, Yoshiki Maeda, Tsukasa Terada, Nobuyasu Naruse, Yutaka Mera, Eiichi Kobayashi, Yoshiaki Nakamura
New informative systems toward next-generation human society such as artificial intelligence and internet of things have been extensively studied. Now, the systems for huge, fast, and complex calculations are requiring neuromorphic devices [1]. A lot of researchers have enthusiastically paid attention to memristor working like synapse: i.e. memorizing an electric current history [2,3]. Resistance random access memory (ReRAM), which can realize memristor, has great advantages such as high-speed response, low power consumption, and good scalability [4–10].
Sense amplifier for ReRAM-based crossbar memory systems
Published in International Journal of Electronics Letters, 2023
Hock Leong Chee, Yu Zheng Kok, T. Nandha Kumar, Haider A.F. Almurib
The state variable that represents the resistive state of the ReRAM are plotted for the HRS and LRS ReRAMs in Figure 3(a) and Figure 3(b), respectively. It moves between the boundaries 0 and 1 and the ReRAM is in LRS(HRS) when the state variable is 1(0).