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CMOS Circuits
Published in Michael Olorunfunmi Kolawole, Electronics, 2020
This chapter starts by discussing the issue of noise, its sources and types, and how it affects the performance of CMOS. Afterwards, the constituents, configuration, fabrication, and design of CMOS into simple and complex logic circuits, as well as its formulation as transmission (or pass) gate and constitution into a VLSI chip are discussed. Also, the difference between static and dynamic CMOS transistors will be discussed. In the construction of static CMOS gate, two complementary networks are used, where only one of which is enabled at any time. Whilst duality is sufficient for static correct operation, it is not necessarily so in reality. The noise margin of a digital circuit or gate is considered: an indication of how well the circuit or gate will perform under noisy conditions. Pass-transistor logic implements a logic gate as a simple switch network. The optimal pass-transistor stages of buffered chain and its delay are derived for minimization.
Logic circuits
Published in Mike Tooley, Electronic Circuits, 2019
The noise margin of a logic device is a measure of its ability to reject noise and spurious signals; the larger the noise margin the better is its ability to perform in an environment in which noise is present. Noise margin is defined as the difference between the minimum values of high-state output and high-state input voltage and the maximum values of low-state output and low-state input voltage. Hence: Noise margin=VOH(MIN)−VIH(MIN)
Logic Circuits
Published in Mike Tooley, Aircraft Digital Electronic and Computer Systems, 2023
The noise margin of a logic device is a measure of its ability to reject noise and spurious signals; the larger the noise margin the better its ability to perform in an environment in which noise is present. Noise margin is defined as the difference between the minimum values of high state output and high state input voltage and the maximum values of low state output and low state input voltage. Hence:Noisemargin=VOHMIN−VIHMINand alsoNoisemargin=VOLMAX−VILMAXwhere VOH(MIN) is the minimum value of high state (logic 1) output voltage, VIH(MIN) is the minimum value of high state (logic 1) input voltage, VOL(MAX) is the maximum value of low state (logic 0) output voltage and VIL(MAX) is the minimum value of low state (logic 0) input voltage.
Dual material gate silicon on insulator junctionless MOSFET for low power mixed signal circuits
Published in International Journal of Electronics, 2019
Figure 10 shows the transient response of CMOS inverter and overshoot response of the output signal. Transient response observed at VDD = 0.5 V. It has been observed that less peak overshoot voltage occurred in DMG SOI JLT compared to DMG SOI transistor. Figure 11(a) shows overshoot voltage versus drain voltage and Figure 11(b) shows that delay versus drain voltage at gate length 20 nm and VGS is 1 V. Overshoot voltage of DMG SOI JLT is minimum compared to DMG SOI transistor at different drain voltages. Overshoot voltage is directly proportional to the gate-to-drain capacitance. Gate-to-drain capacitance of DMG SOI JLT is 73.2aF and DMG SOI transistor is 97.2aF. In junctionless transistor, gate-to-drain capacitance is minimum compared to DMG SOI transistor. Figure 12 shows that the VIN versus VOUT curve of CMOS inverter having DMG SOI JLT is same physical structure to DMG SOI transistor having the same physical channel length, i.e. L = 20 nm. Noise margin is calculated using VIN versus VOUT curve (butterfly curve) of voltage transfer characteristics (VTC). The noise margin represents allowable noise voltage in the input voltage that the input voltage will not change the output voltage. Lower voltage overshoot effect is beneficial to the robust device circuit. Table 4 shows that overshoot voltage and delay at a different drain voltages of DMG SOI junctionless and with junction Transistor.
A Novel Double-Gate MOSFET Architecture as an Inverter
Published in IETE Journal of Research, 2022
To understand the effectiveness of the proposed CMOS inverter better, the plot of static noise margin (SNM) [18] is provided in Figure 7 for different channel lengths. The noise margin measures design margins to ensure the circuits function properly within the specified conditions. To ensure transistors switch properly under noisy conditions, a circuit needs to be designed with specific noise margins. The butterfly curve is presented in Figure 7 for obtaining the static noise margin. The static noise margin is the maximum square that fits the VTC curve. For the channel length 50 nm, the SNM was 0.26V.
VLSI implementation of Wave Shaping Diode based Adiabatic Logic (WSDAL)
Published in International Journal of Electronics, 2021
Noise margin is defined as the ability of the digital logic circuits to function appropriately in the situation of any spurious noise. There are two noise margins which are to be considered, noise margin low (NML) and noise margin high (NMH) and can be calculated as given by following expressions (7) & (8).