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Fault tolerance and ultimate physical limits of nanocomputation
Published in David Crawley, Konstantin Nikolić, Michael Forshaw, 3D Nanoelectronic Computer Architecture and Implementation, 2020
A S Sadek, K Nikolić, M Forshaw
The future usefulness of various nanoelectronic devices may be seriously limited if they cannot be made in large quantities with a high degree of reliability. It is theoretically possible to make very large functional circuits, even with one dead device in 10, but only if the dead devices can be located and the circuit reconfigured to avoid them. However, this technique would require a large redundancy factor. If it is not possible to locate the dead devices or circuits have to be noise tolerant, then one of the other two techniques would have to be used: modular redundancy/majority vote scheme or parallel restitution architecture. The latter was found to be very effective against computational noise. For the cost of a modest overhead of R = 50 and an increase in logical depth of n = 3, a nanoscale computer consisting of 1012 devices would run reliably if the error probability of constituent logic gates does not exceed 10−4.
Memory Design Using Nano Devices
Published in Shilpi Birla, Neha Singh, Neeraj Kumar Shukla, Nanotechnology, 2022
Deepika Sharma, Shilpi Birla, Neha Mathur
Nanotechnology includes technology that covers the whole process of chip designing. Nanoelectronics is the branch of nanotechnology that refers to the use of electronic components at nanoscale. Nanoelectronics include various types of devices at nanosclae, such as CMOS, FinFET and CNTFET. The main focus of this chapter is on nanoelectronic devices, including nanoelectronics and application of these devices in memories. The conventional 6T SRAM cell is designed at 32 nm by using CMOS, FinFET and CNTFET devices. Performance of the cell is taken by various parameters, such static power, HSNM, RSNM and WSNM. Results concluded that FinFET-based cells are superior to MOSFET-based and CNTFET-based cells.
Single Electronics: Modeling and Simulation Techniques
Published in Klaus D. Sattler, st Century Nanoscience – A Handbook, 2020
B. S. Pês, E. Oroski, J. G. Guimarães
Nanoelectronics provide advantages that go beyond scalability. Nanoelectronic devices are ruled by quantum physics (Goser, Pacha, Kanstein & Rossman 1997). This feature allows current to flow through tunneling events, a quantum phenomenon enables individual electron transport (Likharev 1999). It is common to highlight this particularity of nanoelectronic devices by referring it as Single-Electron (SE) devices. Charge transport through tunneling impacts power consumption, scale, and switching capacity (Paul 2002).
An ultra-low-power and high-performance SRAM cell design based on GNRFETs
Published in International Journal of Electronics Letters, 2021
Pramod Kumar Patel, Manzar Malik, Tarun Kumar Gupta
The conventional 6 T SRAM cells are the basic building block of cache memory in computer architecture and systems. Day-by-day the requirement of the memory capacity per unit chip area is increasing, and due to scaling constraint it cannot be fulfilled with the Si-MOSFET devices (Grossar et al., 2006; Moore, 1965; Roy et al., 2003). Further, the conventional cell shows poor performance in terms of read-stability, writeability, and delay at low supply voltage (Lin et al., 2010; Paul et al., 2007, 2018). Furthermore, the power consumption reduction with the aggressively scaled Si-MOSFET transistor is inadequate due to the short channel effect and tunnelling leakage current (Z. Zhang et al., 2012). Hence, potential alternative devices like CNTFETs and GNRFETs are available for the replacement of conventional Si-CMOS devices. TCAD simulation shows these alternative devices having a significant advantage over Si-CMOS devices in terms of power consumption and delay. The outstanding performance of these alternative devices makes it suitable for future low power and high-speed nanoelectronics devices and circuits (Fiori et al., 2014; J. Zhang et al., 2012).
Synthesis of single-layer graphene in benzene–oxygen flame at low pressure
Published in Combustion Science and Technology, 2018
Nikolay G. Prikhodko, Gaukhar T. Smagulova, Nurgali Rakhymzhan, Moldir Auelkhankyzy, Bakhytzhan Т. Lesbayev, Meruyert Nazhipkyzy, Zulkhair A. Mansurov
Being a semimetal with a small overlap of the conduction band and valence band, graphene has unusual and potentially useful properties such as high electrical and thermal conductivity, dependence of electronic characteristics on the presence of attached radicals of different nature on the surface of graphene, extremely high mobility of charge carriers, high elasticity and good electromechanical characteristics. These properties will allow to use it as the basic for new nanomaterials with improved mechanical, electrical and thermal physical characteristics and as an element of nanoelectronic devices. In the last year, a great progress was achieved in the field of graphene usage for improvement of operating characteristics of microwave transistors (Cheng et al., 2012; Wu et al., 2012), the use of graphene in optoelectronics (Bonaccorso et al., 2010), as photodetectors (Urich et al., 2011), etc.