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Microelectronic Circuit Thermal Constrictions Resulting from Moore’s Law
Published in Lambrechts Wynand, Sinha Saurabh, Abdallah Jassem, Prinsloo Jaco, Extending Moore’s Law through Advanced Semiconductor Design and Processing Techniques, 2018
Lambrechts Wynand, Sinha Saurabh
Hot-carrier injection leads to degradation in MOSFETs, of which the key basis is heating within the channel of the MOSFET. The heated active transporters can be introduced into the gate oxide and degrade the characteristics of the transistor, including an increase in Vth, lowering the carrier mobility (the combination leading to a lower drain current) and, therefore, lowering the transconductance. As a result, oxide and interface damage is initiated by the addition of holes and electrons into the gate oxide, through Traps being created within the oxide.Electrons and holes remaining trapped within the oxide layer.The creation of interface states at the semiconductor-oxide interface.Electrons and holes getting trapped by the interface states (Sugiharto et al. 1998).
Process Variability and Reliability of Nano-Scale CMOS Analog Circuits
Published in Soumya Pandit, Chittaranjan Mandal, Amit Patra, Nano-Scale CMOS Analog Circuits, 2018
Soumya Pandit, Chittaranjan Mandal, Amit Patra
The hot carrier injection phenomenon refers to the injection of carriers into the channel or gate insulator produced by impact ionization near the drain end of the channel creating interface and oxide trap damage [112, 84]. This hot carrier injection phenomenon leads to a long-term reliability problem, or “aging problem,” where a circuit might degrade or fail after being in use for some time. The degradation may be attributed to increase of threshold voltage, reduction of carrier mobility, which in turn leads to lowering of drain current, transconductance, and switching speed [125]. As holes are much “cooler” than electrons, hot carrier effects in n-channel MOS transistors are found to be more significant than in p-channel MOS transistors. The degradation occurs by two mechanisms: (i) charge trapping in the oxide and (ii) generation of interface traps. Experimental results have suggested that of the two mechanisms, interface trap generation is the most important.
Nanoscale semiconductor devices for reliable robotic systems
Published in Brij B. Gupta, Nadia Nedjah, Safety, Security, and Reliability of Robotic Systems, 2020
Balwant Raj, Jeetendra Singh, Balwinder Raj
Hot Carrier Gate Dielectric Degradation: if the electric field is greater enough near the Si–SiO2 interface, a region of high electric field is created. Due to this electric field the charge carriers gain enough energy and enter in SiO2 layers. In general, the hot electrons inject more as compare to hole; there are two main reasons: (i) Electrons move faster than holes due to their less effective mass. (ii) The Si–SiO2 interface energy barrier is higher for holes (4.5 eV) than for electrons (3.1 eV). This effect is called hot carrier injection in semiconductor devices. The hot carrier effect is also a main source of power dissipation in nanoscale semiconductor devices.
Substrate noise evaluation for lightly doped 45nm N-MOSFET using physical simulation models
Published in International Journal of Electronics, 2023
Sanjay Sharma, R. P. Yadav, Vijay Janyani
The simulation process is executed on an N-channel CMOS transistor with a 45 nm gate length and 0.01 micrometre gate oxide thickness, and surface net doping of 0.01 micrometre. A buried layer is connected to the sinker for conducting current from the buried layer to the drain layer. MOSFET simulation is done by ATHENA simulator, and Device fabrication is done by SILVACO process simulator. ATHENA was completely desired for the simulator in complex designs realised from industrial techniques. Each fabrication process is converted into a single framework by ATHENA. Following physics are involved during device simulations: 1. Transport model:for deep submicron devices, energy balanced transport model, along with poison’s equation, is used2. Tunnelling model: Lucky electron hot carrier injection model3. Carrier statistics: Fermi Dirac statistics4. Mobility: CVT Lombardi model. FLDMOB model5. Generation recombination model: SRH concentration dependent lifetime model6. Impact ionisation: Selberherr’s model is used
Sentaurus TCAD simulation of SET and Radiation-Hardened technology for FDSOI TFET devices
Published in Radiation Effects and Defects in Solids, 2023
Shougang Du, Hongxia Liu, Shulong Wang
The biggest difference between TFET devices and traditional MOSFET devices is that the hot carrier injection of traditional MOSFET is replaced by band tunneling in the electron injection from the source region of the device into the channel. This physical mechanism enables the device to have better subthreshold swing and smaller current leakage (19).