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Temperature Dependence of Microelectronic Package Failure Mechanisms
Published in Pradeep Lall, Michael G. Pecht, Edward B. Hakim, Influence of Tempemture on Microelectronics and System Reliability, 2020
Pradeep Lall, Michael G. Pecht, Edward B. Hakim
The electromigration lifetime test is carried out under a set of accelerated test conditions at elevated temperatures and with high current density stressing. The data are then extrapolated to device-operating conditions, with current-density stressing below 5 × 105 A/cm2, using the Arrhenius-like empirical equation cited above (originally formulated by Black [1969a,b]). Values of ne,Black that have been reported are shown in Table 2.
Aging Evaluation and Mitigation Techniques Targeting FPGA Devices
Published in Fei Yuan, Krzysztof Iniewski, Low-Power Circuits for Emerging Applications in Communications, Computing, and Sensing, 2018
Ioannis Stratakos, Konstantinos Maragos, George Lentaris, Dimitrios Soudris, Kostas Siozios
Electromigration is the main cause of failures in the interconnect infrastructure of a digital circuit, which can lead to permanent errors. The reason behind electromigration is the migration of metal ions over time. High-density currents flowing through the circuit wires are the main reason for this migration. The immediate consequence of electromigration is an increase of wire impedance, and as time progresses, the final outcome is the development of open and short circuits. Moreover, the smaller the feature size of the wires, in a technology node, the more intense the electromigration effect becomes.
CAD Tools and Design Kits
Published in John D. Cressler, Measurement and Modeling of Silicon Heterestructure Devices, 2018
Motion of electrons of a metal conductor, such as aluminum, in response to the passage of high current through it, may lead to the formation of voids within the conductor. These voids can grow to a size where the conductor is unable to pass current. Electromigration is aggravated at high temperature and high current density, and therefore, is a reliability concern. Electromigration is minimized by limiting current densities and by adding metal impurities such as copper or titanium to the aluminum. These conditions can be highlighted through CAD tools by overlaying the simulation results of current flow through the physical dimensions as designed in the layout and determining the current density of the conducting material. This electrical rule check (ERC) will highlight these conditions to the designer that may result in malfunctioning designs.
Study of complete interconnect reliability for a GaAs MMIC power amplifier
Published in International Journal of Electronics, 2018
Qian Lin, Haifeng Wu, Shan-ji Chen, Guoqing Jia, Wei Jiang, Chao Chen
As the key block in radio frequency (RF) transceivers, the requirements for power amplifier (PA) are aimed to maintain high performance and high reliability simultaneously. The low reliability decreases the PA performance or even causes malfunction, which deteriorates the quality of wireless communication (Ruberto et al., 2008). Among all the failure factors, electromigration (EM) induced interconnect failure has become a major reliability issue due to higher current density in the interconnect as the feature size continues to shrink (Tan & Roy, 2007; Zapata & Bruguera, 2007). EM is a kind of mass diffusion phenomenon, which is attributed to momentum transfer from the conducting electrons to atoms, and finally cause the fatal failures such as open circuit or short circuit in metal film (Tan & Roy, 2006).
Comparison between heat treatment and SPS treatment on CoCrFeMnNi/WC coatings
Published in Surface Engineering, 2022
Yicheng Zhou, Bing Yang, Guodong Zhang
The application of pulsed current plays an important role in improving the mobility of solute atoms. As an electric current passes through a conductor, conductive electrons collide with diffusing metal atoms in the wire, and the momentum transfer they provide causes the metal atoms to move, known as the electromigration effect. The electromigration driving force exerted by direct current on atoms can be expressed by the following equations [36]: where Fel is a direct pushing force on metal atoms due to the applied electric field, Fwd is the force of electron-wind generated by momentum exchange between electrons and metal atoms, which can be obtained by the following equation [35]: where me, vf, j and e are the electron mass, Fermi velocity, current density and electron charge, respectively. The current density used in this experiment is about 226.35 A cm−2. After calculation, the electron-wind force is very small, about 1.3 Pa, indicating that the main influence of the current is the direct pushing force on the metal atoms. Cr is a kind of substitutional atom, which belongs to vacancy diffusion in terms of diffusion mechanism, and its diffusion activation energy includes the formation energy of adjacent vacancies ΔUV and migration energy ΔU0. According to Hans Conrad's research, under pulsed current conditions, vacancies will converge from the inside to the surface in the direction of the current [37], that is, vacancy formation is easier, thus reducing ΔUV. The direct pushing force of the pulsed current makes the atoms in a higher energy state and reduces the migration energy ΔU0. The combined action of these two aspects leads to the overall reduction of activation energy.
Optimum lot inspection based on lognormal reliability tests
Published in International Journal of Production Research, 2023
In practice, many microelectronic wear-out failure mechanisms, such as electromigration, are often described through lognormal distributions. Consider that a quality manager wants to verify the reliability of a certain type of microelectronic chips at specified high levels of voltage and temperature in order to monitor the production process. Due to the extreme conditions assumed, the occurrence of electromigration failures is greatly accelerated.