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Introduction
Published in Chinmay K. Maiti, Fabless Semiconductor Manufacturing, 2023
GAA transistors are based on NWs and nanosheets [130]. A nanosheet-based GAAFET uses nanosheets instead of NWs as the channel. Today’s emphasis on low-power and low-voltage operation in industry and academe requires an understanding of the nanodevices at ultimate scaling [131]. The technology generation of logic devices in the industry is expected to reach 5 nm and 3 nm in the years 2021 and 2024, respectively. Using GAAFET, IBM successfully demonstrated 5 nm process technology. A nanosheet-based GAAFET is a MBCFET. Except for the fact that MBCFET uses nanosheets instead of NWs as a channel, they are architecturally similar. MBCFETs have many advantages in terms of design and structure. First, the nanosheets can be stacked vertically to increase speed without taking up more space. Second, since they use the same manufacturing process, they are extremely compatible with current technology.
Area efficient layout design of CMOS circuit for high-density ICs
Published in International Journal of Electronics, 2018
Vimal Kumar Mishra, R. K. Chauhan
Figure 1(c) shows the TBRS FD-SOI MOSFET-based CMOS structure having silicon thickness at source, taken as 3 nm and at the drain, it is 10 nm maximum. The channel length is 50 nm and width of inverter is taking 100 nm. Both diffusion Length (LD) and front gate oxide thickness of the MOSFET has been taken as 1 nm.
Development of a detection system for gas-phase aromatics and other molecules ionizable by soft X-rays demonstrated using methyl salicylate
Published in Aerosol Science and Technology, 2023
Dong-Bin Kwak, Seong Chan Kim, George W. Mulholland, Miles C. Owen, Changhyuk Kim, Handol Lee, David Y.H Pui
In addition to CWAs, outdoor air is purified by a series of aerosol filtration systems using high-efficiency particulate air (HEPA) filters and ultra-low particulate air (ULPA) filters (S. C. Kim, Cho, et al. 2020; Kim, Harrington, and Pui 2006; Kim, Sul, and Pui 2016b; Donovan 1990) to keep a particle-free environment inside the semiconductor manufacturing facilities. However, the problem of contamination at the molecular level, known as AMCs (Airborne Molecular Contaminations), arises from gaseous pollutants, outgassing from construction materials, outgassing from particulate matter (PM2.5 or PM10), or solvents (wet chemicals) in particle-free cleanrooms during the semiconductor manufacturing process (Kwak et al. 2021, 2023; Kim et al. 2015; Kim, Sul, and Pui 2016b, 2019; Billet et al. 2007; Dallas et al. 2002). When AMCs are exposed to shorter wavelength light sources such as deep ultraviolet (DUV) laser (e.g., 248-nm krypton-fluoride (KrF) excimer laser, 193-nm argon-fluoride (ArF) excimer laser), or 13.5-nm extreme ultraviolet (EUV) laser, AMCs can form particle or haze contaminations on wafers or photomasks, despite the ultra-low concentration (e.g., part per billion (ppb) or part per trillion (ppt)) of volatile and condensable AMCs (C. Kim, Cho, et al. 2020; Lobert et al. 2009, 2010, 2018; Kim et al. 2015; Otto 2015; Daly 2015; Chuang and Chang 2013; Pic et al. 2010; Weineck, Zastera, and Dallas 2010; Den, Bai, and Kang 2006; Gordon et al. 2005; Ito and Okazaki 2000). Nowadays, the major semiconductor manufacturing companies (including Intel Corporation, Samsung Electronics Co., Ltd., and Taiwan Semiconductor Manufacturing Company) try to fabricate smaller nodes (up to ∼2 nm) by using the current start-of-the-art EUV lithography system, which is developed by ASML. This is because smaller transistors operate faster and require less power. For example, the optimized 3-nm process obtains 45% reduced power usage, 23% improved performance, and 16% smaller surface area compared to the 5-nm process (Samsung Newsroom 2022). Therefore, it is very important to understand the gas-to-particle conversion process under the high energy source (e.g., EUV or soft X-ray in this study) to prevent AMCs and minimize the defects on chips in the semiconductor manufacturing process.