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Overview of Nanometer CMOS Technology
Published in Frank Schwierz, Hei Wong, Juin J Liou, Nanometer CMOS, 2010
Frank Schwierz, Hei Wong, Juin J Liou
The back-end processing such as that for interconnects is becoming increasingly important in CMOS manufacturing. The introduction of low-k materials for the interlayers of interconnects, while reducing the wiring capacitance and providing improved performance, faces some severe technical constraints. A related subject is the source and drain contacts, which are normally made by a self-aligned silicide (salicide) process. This process provides good ohmic contacts, and nickel silicide is frequently used as it possesses the advantage of less Si consumption and easy formation in a simple single-step annealing at 400 to 600°C.36 Two different materials were conventionally used for interconnects. Polysilicon has been used for several decades for local interconnects, whereas aluminum was generally used for global interconnects.
Carbon-based innovative materials for nuclear physics applications (CIMA), INFN project
Published in Radiation Effects and Defects in Solids, 2021
L. Torrisi, L. Silipigni, L. Calcagno, M. Cutroneo, A. Torrisi
In the field of the graphene-based detectors, graphene and highly reduced rGO films, are interesting to develop applications to improve the detection efficiency of semiconductor detectors based on monocrystalline Si, SiC and diamonds. Graphene and rGO, in fact, as highly conductive, low density and thickness and near transparent surface electrodes, allow creating thin and adherent electrodes with negligible energy loss and absorption coefficient by particles and photons, respectively. 4H-SiC detectors, for example, generally use Ni2Si surface electrodes with a thickness of 200 nm, as described in the literature (49), and are employed to detect UV, X-rays, electrons and ions. This nickel silicide has the advantage to be chemically and thermally stable, to have high mechanical resistance and to have low electrical resistivity, of about 24–30 μΩ·cm, but the disadvantage to have high mass density, of 7.4 g/cm3, and high absorption coefficient for soft X-rays and high stopping power for electron and ion beams. On the contrary, graphene and rGO, as thin film, has low density and resistivity and low absorption coefficient and stopping power for photons and particles conferring high detection efficiency to the detector.