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Ceramic Armour
Published in Paul J. Hazell, Armour, 2023
Usually, reaction-bonded silicon carbide is manufactured by infiltrating a preform of silicon carbide and carbon particles with molten or vapourized silicon (Si). The silicon and the carbon react to form silicon carbide (as above), which bonds the original silicon carbide particles together. The resulting structure will be a composite of silicon and silicon carbide. The carbon is usually completely consumed.
Binary IV-IV and III-V Semiconductors
Published in Lev I. Berger, Semiconductor Materials, 2020
Silicon carbide is one of the hardest materials. Its Mohs hardness is 9.5; the Knoop microhardness is 28.8 ± 3.5 GPa.4.27 The elastic constants of 6H-SiC at 300 K are c11 = 500, c12 = 92, C33 = 564, and c44 = 168 GPa.4.28 The room temperature magnitude of the cubic SiC Young’s modulus is 410 GPa. It should be mentioned that the amorphous SiC films, also having very high mechanical properties (the hardness of 30 GPa and Young’s modulus of 240 GPa4.43), present substantial interest in using the films as the X-ray masks.
Characteristics of the Metal–Metal Oxide Reaction Matrix
Published in Anthony Peter Gordon Shaw, Thermitic Thermodynamics, 2020
Silicon is the second-most abundant element in the earth’s crust after oxygen [28]. Most of the crust is composed of silicate minerals (Figure 2.13). Metallurgical-grade silicon and silicon carbide are produced by the reduction of silicon dioxide with carbon in an electric furnace. Carefully controlled conditions are required to produce either material selectively [29]. Ferrosilicon alloys are produced when silicon dioxide is reduced in the presence of iron. Recall that ferrosilicon is used to produce magnesium, as described by equation 2.22. Very pure silicon for semiconductor applications has been produced by a chemical vapor deposition process—the high-temperature reduction of HSiCl3 with H2 [30].
Investigation of the recovery process in low-dose neutron-irradiated 6H-SiC by lattice parameter and FWHM of diffraction peak measurements
Published in Radiation Effects and Defects in Solids, 2022
Shouchao Zhang, Xiaohong Cui, Hongfei Liu, Yu Yang, Hongyu Chen, Xin Li, Defeng Liu, Fei Zhu
Silicon carbide (SiC) has been widely used in the field of electronic, nuclear fusion and aerospace industries due to its excellent physical and material properties. These properties include wide band gap, strong stability in high-temperature environments, low intrinsic activity after irradiation and quick decay of radioactivity and so on (1–5). Moreover, SiC can act as a promising host for quantum bits, single-photon sources based on impurities, temperature sensors and monitors for specific environments (6–11). It is known that neutron-irradiation-induced crystalline defects degrade material properties of SiC (12, 13). Therefore, it is crucial to study the generation mechanism and high-temperature stability of these defects to evaluate the application potential of SiC materials.
An Overview on MOSFET Drivers and Converter Applications
Published in Electric Power Components and Systems, 2021
Mustafa Ergin Şahin, Frede Blaabjerg
Increasing attention to new semiconductor materials has been seen in recent years. Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN), high electron mobility transistors (HEMTs), and silicon carbide (SiC) MOSFETs are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their advantages [8]. Also, thin-film memristor devices are proposed and fabricated to reduce switching resistance behavior for high frequencies [9]. The silicon carbide (SiC) semiconductor is encouraging for power electronic applications and will increase every year. However, unipolar SiC JFET/MOSFET devices give a fast switching process and reduce the switching losses compared to bipolar Si devices used in power electronics high voltage applications [10]. The SiC MOSFET drivers’ performance investigated for transient immunity [11], fast overcurrent protection for high voltages [12], high voltage PV inverter applications [13], high power applications [14], current source gate driver applications [15], improving current sharing performance of paralleled converters [16,17], and gate-driver integrated junction temperature estimation [18] in recent years. Gate drivers for single-pole devices must be adjusted to these devices for their requirements [19–21].
Merits of SiC MOSFETs for high-frequency soft-switched converters, measurement verifications by both electrical and calorimetric methods
Published in EPE Journal, 2019
S. Tiwari, J. K. Langelid, T. M. Undeland, O.-M. Midtgård
On the other hand, silicon carbide (SiC)-based power devices have demonstrated significant potential, especially in high voltage, high efficiency, high power density, and high temperature areas where Si devices confront some fundamental performance boundaries. This is primarily because of the inherent limitations of Si material properties over those of SiC [4–6]. Employing SiC, unipolar devices, such as power MOSFETs, are feasible in the same or higher voltage classes. Indeed, SiC has a 10 times higher breakdown electric field compared to Si, enabling devices with lower on-state losses, potentially lower by a factor of 1/500–1/1000, than those for Si at the same voltage ratings [7]. In addition, SiC unipolar devices do not exhibit a tail current. Nonetheless, the on-state losses depend only on the junction temperature and not on the switching frequency for these majority carrier devices [3], which are the obvious reasons for their preference in high frequency soft switched operations, such as high power LLC resonant type and SMPS applications.