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Damascene Copper Electroplating
Published in Robert Doering, Yoshio Nishi, Handbook of Semiconductor Manufacturing Technology, 2017
Primary responses to be considered during process optimization for copper electroplating of IC interconnects include filling performance, within die uniformity, within wafer uniformity, grain size, copper electromigration behavior, defects in the deposited film, and defects in the circuitry following CMP. Variables that will impact these responses include concentrations and types of accelerators, suppressors, and leveler, concentrations of chloride ion, copper, and acid, and other parameters such as flow, temperature, current density, and current waveform [18,19]. Achievement of robust filling performance required for a given product usually determines the general parameter space over which all responses must be investigated by process window experiments.
System-level Packaging Technology
Published in Yufeng Jin, Zhiping Wang, Jing Chen, Introduction to Microsystem Packaging Technology, 2017
Yufeng Jin, Zhiping Wang, Jing Chen
In order to insulate the subsequent via metal from the surrounding silicon, SiO2 is deposited by plasma enhanced chemical vapor deposition. Ideally, coverage over the entire via structure should be conformal. However, the relatively high aspect ratio of the via can pose a problem requiring careful optimization of deposition parameters. It is also critical to control stress in the insulating layer, in order to ensure structural integrity under subsequent processing and operating conditions. The titanium-tungsten (TiW) barrier and the Cu seed layer are deposited by magnetic sputtering. There are two methods of copper electroplating. One is DC plating, the other is periodic pulse reverse (PPR) current plating. In TSV’s copper electroplating, cupric ions are reduced to copper and deposited on the cathode, but the deposition rate is different between the top of the via and the bottom of it. Because the depletion rate of cupric ions is faster than the diffusion rate of cupric ions from the bulk solution into the bottom of vias, the concentration of cupric ions at the entrance of vias is higher than that at the bottom. This concentration gradient leads to different deposition rates: the deposition rate at the top is faster than that at the bottom. Eventually, voids or seams are usually formed inside of vias. In the case of DC plating, there was only one nucleation step, and copper grains grow continuously with electroplating time, since it provides a continuous current with a constant current density and the via is always kept at the cathode potential. So, it is difficult to obtained defect-free copper filling for vias by DC plating.
Case Studies: Synthesis, Analysis, Fabrication, and Computer-Aided-Design of MEMS
Published in Sergey Edward Lyshevski, Mems and Nems, 2018
From the electrochemistry viewpoint the commonly used solutions for the copper electroplating are acidic (copper sulfate in fluoborate pyrophosphate bath) and alkaline (cyanide in not-cynaide bath), and different additives can be added to achieved the desired characteristics.
Fabrication of 3D microstructures in glass by direct writing electrochemical discharge machining
Published in Materials and Manufacturing Processes, 2023
Dileep Kumar Mishra, Pradeep Dixit
Figure 8 summarizes the process flow used to create the 3D microstructures. The back-side RDLs and through-holes were created first. Then the front-side RDLs were formed (Fig. 8(a)). Copper electroplating has been widely used to metallize the microstructures for various applications such as 3D interconnection, RDLs, etc.[33–35] The metallization of the fabricated microstructure was performed using the electroless seed layer deposition and copper electroplating techniques, as shown in Fig. 8(b,c).[36,37] Copper electroplating was performed to fill the RDLs and through holes. The copper layer was polished off from the undesired locations, and then electroplating was carried out again to increase the thickness.
Copper removal kinetic from electroplating industry wastewater using pulsed electrodeposition technique
Published in Environmental Technology, 2022
Thayane Carpanedo de Morais Nepel, Josiel Martins Costa, Melissa Gurgel Adeodato Vieira, Ambrósio Florêncio de Almeida Neto
Copper is the most abundant metal in the jewelry industry wastewater, due to its application in the initial stages of preparing the jewelry base for the colour production stages. The main function of copper electroplating is to increase the thickness, reducing surface imperfections, and promoting a homogeneous and continuous substrate. Besides, copper has numerous applications, such as the coating on reactors, storage tanks, fuel transportation pipelines, and industrial facilities [6].